1. Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2.
- Author
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Wang, Huiqin, Liu, Zixu, Wang, Leiyuan, Shou, Qiujie, Gao, Ming, Wang, Huijie, Nazir, Ahsan, and Huo, Pengwei
- Subjects
HETEROJUNCTIONS ,SEMICONDUCTOR materials ,ELECTRONIC excitation ,CHARGE exchange ,PHOTOCATALYSTS ,LIGHT intensity - Abstract
Interfacial coupling of two-dimensional semiconductor materials is an effective option to construct heterojunction for enhancing photocatalytic activity. In this paper, a g-C
3 N4 /SnS2 type-II heterojunction was constructed using an electrostatic self-assembly method. The g-C3 N4 /SnS2 -60 showed a CO yield of 2.54 µmol g−1 , which was 2.96 and 22.1 times that of the g-C3 N4 and SnS2 nanosheets, respectively. The efficient carrier separation efficiency of the composites is mainly derived from the type-II heterojunction structure and the interfacial synergy of the two-dimensional (2D) structure. In addition, the high light response intensity of the g-C3 N4 /SnS2 composite also had excellent electron excitation and transfer ability. This work provides a new vision for the rational design of 2D heterojunction-based photocatalysts for the study of CO2 reduction. [ABSTRACT FROM AUTHOR]- Published
- 2023
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