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The properties of materials play a significant role in triboelectric nanogenerators (TENGs). Advanced triboelectric materials for TENGs have attracted tremendous attention because of their superior advantages (e.g., high specific surface area, high porosity, and customizable macrostructure). These advanced materials can be extensively applied in numerous fields, including energy harvester, wearable electronics, filtration, and self‐powered sensors. Hence, designing triboelectric materials as advanced functional materials is important for the development of TENGs. Herein, the structural modification methods based on electrospinning to improve the triboelectric properties and the latest research progress in this kind of TENGs are systematically summarized. Preparation methods and design trends of nanofibers, microspheres, hierarchical structures, and doping nanomaterials are highlighted. The factors influencing the formation and properties of triboelectric materials are considered. Furthermore, the latest progress on the applications of TENGs is systematically elaborated. Finally, the challenges in the development of triboelectric materials are discussed, thereby guiding researchers in the large‐scale application of TENGs. [ABSTRACT FROM AUTHOR]

In2O3-based metal-oxide-semiconductor channel materials are attractive for thin-film transistors and novel back-end-of-line (BEOL) compatible devices and have attracted intensive research activities in recent years. However, several challenges remain, such as the ultrahigh electron density and the nature of polycrystalline films. To overcome these issues, here in this work, we demonstrated an in situ semi-insulating doping method of In2O3 via atomic layer deposition and fabricated the indium-aluminum-oxide (IAO) transistors. The controllable concentration of Al enables an on-current of 1.8 μA/μm with the cycle ratio at In2O3:Al2O3 (10:1), mobility, and subthreshold swing of the transistor are 8.7 cm2/V s, and 203 mV/dec. The threshold voltage (Vt) is adjustable by varying Al concentrations, shifting to negative bias with a higher concentration of Al. The IAO-based transistor presents many advantages, including excellent on/off ratio and high mobility, making it ideal for many applications, such as display panels and low-power BEOL integrations. [ABSTRACT FROM AUTHOR]

Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics. In this work, wafer-scale intrinsic n-type WS 2 films and in situ Nb-doped p-type WS 2 films were synthesized through atomic layer deposition (ALD) on 8-inch α -Al 2 O 3 /Si wafers, 2-inch sapphire, and 1 cm 2 GaN substrate pieces. The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing. WS 2 n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes. X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements confirmed the effective substitutional doping with Nb. The on/off ratio and electron mobility of WS 2 n-FET are as high as 10 5 and 6.85 cm 2  V -1  s -1 , respectively. In WS 2 p-FET with 15-cycle Nb doping, the on/off ratio and hole mobility are 10 and 0.016 cm 2  V -1  s -1 , respectively. The p-n structure based on n- and p- type WS 2 films was proved with a 10 4 rectifying ratio. The realization of controllable in situ Nb-doped WS 2 films paved a way for fabricating wafer-scale complementary WS 2 FETs., Competing Interests: The authors declare no competing financial interest., (Copyright © 2021 Hanjie Yang et al.)

Transition-metal dichalcogenides (TMDs) have attracted intense research interest for a broad range of device applications. Atomic layer deposition (ALD), a CMOS compatible technique, can enable the preparation of high-quality TMD films on 8 to 12 in. wafers for large-scale circuit integration. However, the ALD growth mechanisms are still not fully understood. In this work, we systematically investigated the growth mechanisms for WS 2 and found them to be strongly affected by nucleation density and film thickness. Transmission electron microscope imaging reveals the coexistence and competition of lateral and vertical growth mechanisms at different growth stages, and the critical thicknesses for each mechanism are obtained. The in-plane lateral growth mode dominates when the film thickness remains less than 5.6 nm (8 layers), while the vertical growth mode dominates when the thickness is greater than 20 nm. From the resulting understanding of these growth mechanisms, the conditions for film deposition were optimized and a maximum grain size of 108 nm was achieved. WS 2 -based field-effect transistors were fabricated with electron mobility and on/off current ratio up to 3.21 cm 2 V -1 s -1 and 10 5 , respectively. Particularly, this work proves the capability of synthesis of TMD films in a wafer scale with excellent controllability of thickness and morphology, enabling many potential applications other than transistors, such as nanowire- or nanosheet-based supercapacitors, batteries, sensors, and catalysis.

The human patatin-like phospholipase domain-containing 3 gene (PNPLA3) is highly expressed in liver and adipose tissue and encodes a transmembrane polypeptide chain containing 481 amino acids. The I148M variant of PNPLA3 is a single nucleotide polymorphism, which is related to a variety of liver and cardiovascular diseases and their complications (such as non-alcoholic fatty liver disease, liver fibrosis, coronary artery disease). This review mainly describes the pathophysiological effects of PNPLA3 and its variants, and their roles in the progression of liver disease and its complications., Competing Interests: Competing Interests: The authors have declared that no competing interest exists., (© The author(s).)