Search

In the framework of nonlinear wave optics, we report the evolution process of a dipole breathing wave in lossy nonlocal nonlinear media based on the nonlocal nonlinear Schrödinger equation. The analytical expression of the dipole breathing wave in such a nonlinear system is obtained by using the variational method. Taking advantage of the analytical expression, we analyze the influences of various physical parameters on the breathing wave propagation, including the propagation loss and the input power on the beam width, the beam intensity, and the wavefront curvature. Also, the corresponding analytical solutions are obtained. The validity of the analysis results is verified by numerical simulation. This study provides some new insights for investigating beam propagation in lossy nonlinear media [ABSTRACT FROM AUTHOR]

The weakly bound nucleus 29F locates near the neutron drip line. Experiments have confirmed that it is the heaviest two-neutron halo nucleus discovered up to now. To understand the halo structure in 29F, we explore the weakly bound and resonant levels close to the Fermi surface with the complex momentum representation method. Not only the narrow resonances and the broad resonances. Since the broad resonance 2 p 3/2 is disclosed, the p âˆ' f inversion and N = 20 shell gap quenching are found. The last valence neutron can occupy the weakly bound level 1/2[310], composed mainly of p 3/2â€"component, or the 1/2[211], composed mainly of s 1/2â€"component. Since the wavefunctions of p and s â€"components extend to a large range in the coordinate space, which results in the density distributions of the levels 1/2[310] and 1/2[211] being considerably diffuse. This is the most likely cause of halo formation in 29F and the halo may be formed by the p â€"component, s â€"component, or their mixtures by pairing correlations. [ABSTRACT FROM AUTHOR]

An ultra-wideband and high-efficiency reflective linear-to-circular polarization conversion metasurface is proposed. The proposed metasurface is composed of a square array of a corner-truncated square patch printed on grounded dielectric substrate and covered with a dielectric layer, which is an orthotropic anisotropic structure with a pair of mutually perpendicular symmetric axes u and v along the directions with the tilt angles of ±45° with respect to the vertical y axis. When the u- and v-polarized waves are incident on the proposed metasurface, the phase difference between the two reflection coefficients is close to –90° in an ultra-wide frequency band, so it can realize high-efficiency and ultra-wideband LTC polarization conversion under both x- and y-polarized incidences in this band. The proposed polarization conversion metasurface is simulated and measured. Both the simulated and measured results show that the axial ratio (AR) of the reflected wave is kept below 3 dB in the ultra-wide frequency band of 5.87 GHz–21.13 GHz, which is corresponding to a relative bandwidth of 113%; moreover, the polarization conversion rate (PCR) can be kept larger than 99% in a frequency range of 8.08 GHz–20.92 GHz. [ABSTRACT FROM AUTHOR]

The study of exotic nuclei is one of the most interesting topics in nuclear physics. 34Na has attracted additional attentions for an odd–odd nucleus with special structure. Here, we combine the complex momentum representation (CMR) and Green's function (GF) to establish the CMR-GF method for the exploration of exotic structure, such as halo, skin, the level inversion and so on, in 34Na. The available density distributions, the configuration occupations, and the root mean square radius for the orbit occupied by the last valence neutron suggest a p-wave single-neutron halo or skin structure in 34Na. [ABSTRACT FROM AUTHOR]

Two-dimensional electron gas (2DEG) with high electron mobility is highly desired to study the emergent properties and to enhance future device performance. Here we report the formation of 2DEG with high mobility at the interface between rock-salt BaO and perovskite SrTiO3. The interface consists of the ionically compensated BaO1 â€" δ layer and the electronically compensated TiO2 layer, which is demonstrated as a perfect interface without lattice mismatch. The so-formed interface features metallic conductivity with ultralow square resistance of 7.3 Ă— 10âˆ'4 Ω/â—» at 2 K and high residual resistance ratios R 300 K/ R 2 K up to 4200. The electron mobility reaches 69000 cm2â‹...Vâˆ'1â‹...sâˆ'1 at 2 K, leading to Shubnikovâ€"de Haas oscillations of resistance. Density functional theory calculations reveal that the effective charge transfers from BaO to the Ti 3 dxy orbital occur at the interface, leading to the conducting TiO2 layer. Our work unravels that BaO can adapt itself by removing oxygen to minimize the lattice mismatch and to provide substantial carriers to SrTiO3, which is the key to forming 2DEGs with high mobility at the interfaces. [ABSTRACT FROM AUTHOR]

An ultra-wideband 2-bit coding metasurface is designed for radar cross-section (RCS) reduction. The design process is presented in detail, in which a polarization conversion metasurface (PCM) is first proposed. The proposed PCM can realize ultra-wideband circular polarization (CP) maintaining reflection. Moreover, Pancharatnam-Berry (PB) phase will be generated in the co-polarized reflection coefficient by rotating the metallic patches in its unit cells. Thus, based on the PCM, the four coding elements of a 2-bit coding metasurface are constructed using PB phase, and an ultra-wideband PB 2-bit coding metasurface is proposed according to an appropriate coding sequence. The simulated and experimental results show that the coding metasurface has obvious advantages of wideband and polarization-insensitivity. Compared to a metallic plate of the same size, it can achieve more than 10 dB RCS reduction in the frequency band from 9.8 GHz to 42.6 GHz with a relative bandwidth of 125.2% under normal incidence with arbitrary polarizations. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm2⋅V−1⋅s−1 in bulk Nb2SiTe4, higher than the reported results. In a thin flake Nb2SiTe4, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications. [ABSTRACT FROM AUTHOR]

We investigate the structural variation and physical properties of layered La2M5As3O2 (M = Cu, Ni) compound upon Co doping. It is found that the substitution of Co ion just induces the monotonous change of lattice constants without observing the anomalous kink in superconducting La2(Cu1–xNix)5As3O2 solid-solutions. Meanwhile, this doping barely changes As–As bond length in [M5As3]2– subunit (±2%), being significantly smaller than 7% shrinkage of that in La2(Cu1–xNix)5As3O2. Therefore, the doping dependence of crystal structure exhibits similar trend with Ba1–xKxFe2As2 without the interference of As1–As2 bonding, implying that the Co substitution for Cu/Ni is hole-doped. In terms of physical property, La2(Cu1–xCox)5As3O2 turns into itinerant ferromagnetic metal, while La2(Ni1–xCox)5As3O2 shows paramagnetism and suppressed structural phase transition upon Co-doping. The distinct structural variation and absence of superconductivity provide important clues to understand the effect of As–As bond in [M5As3]2– subunit. [ABSTRACT FROM AUTHOR]

We demonstrate a broadband optical parametric oscillation, using a sheet cavity, via cavity phase-matching. A 21.2 THz broad comb-like spectrum is achieved, with a uniform line spacing of 133.0 GHz, despite a relatively large dispersion of 275.4 fs2/mm around 1064 nm. With 22.6% high slope efficiency, and 14.9 kW peak power handling, this sheet optical parametric oscillator can be further developed for χ(2) comb. [ABSTRACT FROM AUTHOR]

We present the superconducting (SC) property and high-robustness of structural stability of kagome CsV3Sb5 under in situ high pressures. For the initial SC-I phase, its Tc is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P ∼ 10 GPa. With further increasing pressure, an SC-II phase emerges at P ∼ 15 GPa and persists up to 100 GPa. The Tc rapidly increases to the maximal value of 5.2 K at P = 53.6 GPa and slowly decreases to 4.7 K at P = 100 GPa. A two-dome-like variation of Tc in CsV3Sb5 is concluded here. The Raman measurements demonstrate that weakening of E2g mode and strengthening of E1g mode occur without phase transition in the SC-II phase, which is supported by the results of phonon spectra calculations. Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near EF, i.e., disappearance of Z2 invariant. Meanwhile, the Fermi surface enlarges significantly, consistent with the increased carrier density. The findings here suggest that the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC. [ABSTRACT FROM AUTHOR]

ZnGa2O4 films with different nitrogen impurity concentrations were deposited using radio frequency magnetron sputtering in an ammonia (NH3)/Ar gas mixture and were post-annealed at different temperatures, ranging from 600 °C to 900 °C, in NH3 atmosphere. The influence of ammonia partial pressure ratio and nitridation temperature on the microstructure, surface morphology, nitrogen doping profile, and optical properties has been investigated. The optical band gap of ZnGa2O4, under in-situ nitrogen-doping, decreases from 4.6 to 4.1 eV but the primitive ZnGa2O4 crystalline structure does not change. On nitridation, the optical band gap gradually decreases from 4.6 to 2.1 eV and the ZnGa2O4 changes into a zinc gallium oxynitride quaternary alloy structure. Secondary ion mass spectrometry analysis revealed that nitrogen atoms were uniformly distributed in the film. The narrowing, by more than 40%, of the optical band gap is attributed to the hybridization of Zn3d and N2p orbits promote p-d repulsion in the top of the valence band, and the formation of hexagonal wurtzite phase. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications. [ABSTRACT FROM AUTHOR]

Quantum illumination, that is, quantum target detection, is to detect the potential target with two-mode quantum entangled state. For a given transmitted energy, the quantum illumination can achieve a target-detection probability of error much lower than the illumination scheme without entanglement. We investigate the usefulness of noiseless linear amplification (NLA) for quantum illumination. Our result shows that NLA can help to substantially reduce the number of quantum entangled states collected for joint measurement of multi-copy quantum state. Our analysis on the NLA-assisted scheme could help to develop more efficient schemes for quantum illumination. [ABSTRACT FROM AUTHOR]

In quantum mechanics, there is no measurement process that could gain some information of an unknown quantum state without causing any disturbance. A tradeoff bound between the amount of information gain and the concomitant disturbance in the measurement process of a bipartite entangled state is actually ingrained. Such a bound is fundamental and closely connected with the entangled degree b. In this work, the bound for estimation of a partial entangled state with a local strategy is investigated. It is shown that, with local operation with classical communication, a monotonic change in the picture will be spotted. This is due to the fact that the partial entanglement gradually becomes two individual qubits and, consequently, the optimal operation boils down to local operations. A quantum circuit which achieves the optimal tradeoff is also obtained. [ABSTRACT FROM AUTHOR]

Graphene is a new promising candidate for application in radio-frequency (RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors (RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits. [ABSTRACT FROM AUTHOR]

In the present paper, the concentration effect of near-infrared quantum cutting of Tm3+ ion in (Y1–xTmx)3Al5O12 powder phosphor is studied by means of experiments and calculations. In addition, the absorption spectra, visible-to-near-infrared excitation and emission spectra, and fluorescence lifetimes are measured. It is found that (Y1–xTmx)3Al5O12 powder phosphor has a strong four-photon near-infrared quantum cutting luminescence of 1788.0-nm 3F4 → 3H6 fluorescence of Tm3+ ion, when excited by 357.0-nm light. It is also found that the up-limit of the four-photon near-infrared quantum cutting luminescence efficiency of (Y0.700Tm0.300)3Al5O12 powder phosphor is approximately 302.19%. To the knowledge of the authors, this is the first time that a near-infrared quantum cutting efficiency up-limit exceeding 300% has been reported. The results of this manuscript are valuable in aiding the probing of the new generation Ge solar cell. [ABSTRACT FROM AUTHOR]