1. A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit
- Author
-
Bi Chuang, Jun Zhai, Chen Zhangyong, Zhong Rongqiang, Anjian Zhou, Yong Chen, and Zhong Yang
- Subjects
General Computer Science ,Computer science ,S-parameter ,02 engineering and technology ,Hardware_PERFORMANCEANDRELIABILITY ,Parameter extraction ,01 natural sciences ,multi-terminal circuit ,0103 physical sciences ,MOSFET ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Hardware_INTEGRATEDCIRCUITS ,General Materials Science ,Electrical impedance ,Electronic circuit ,010302 applied physics ,Focused Impedance Measurement ,020208 electrical & electronic engineering ,General Engineering ,electromagnetic interference ,Power (physics) ,Terminal (electronics) ,RLC circuit ,Equivalent circuit ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,lcsh:TK1-9971 ,Network analysis - Abstract
To better predict the high-frequency switching operation of the half-bridge circuit in power converters, the value of the parasitic elements of these devices must be accurately evaluated. A new MOSFET-based half-bridge circuit parasitic inductances extraction method using two-port S-parameters is proposed in this paper. By changing the terminal connection of the half-bridge circuit, we can treat it as several different two-port networks, and then detailed network analysis can be performed on it. The parasitic parameters of multi-terminal actual circuits such as half-bridge can be extracted accurately and quickly through the simple measurement steps and calculations of the proposed method.
- Published
- 2021