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• Optical properties and ordering degree of InGaP were investigated by Zn doping. • Characterization of optical properties of InGaP by tmperature-dependent PL. • The ordering degree of the InGaP was calculated from the band gap at low temperature. • The study found that Zn doping leads to a decrease in the ordering degree of InGaP. In 0.49 Ga 0.51 P is highly promising due to its favorable lattice-matching properties with GaAs, making it well-suited for various device applications. This study investigated the influence of Zn doping on the ordering and optical properties of In 0.49 Ga 0.51 P grown on GaAs using metalorganic chemical vapor deposition. By precisely controlling the doping flow, the ordering degree of In 0.49 Ga 0.51 P was systematically modulated. The luminescence origin and bandgap characteristics of In 0.49 Ga 0.51 P were examined through temperature-dependent photoluminescence and Hall measurements. The findings demonstrate a noticeable peak shift, accompanied by a increase in the bandgap and a corresponding decrease in the ordering degree as the Zn concentration increases. [ABSTRACT FROM AUTHOR]