1. 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma.
- Author
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Jia, Fuchun, Ma, Xiaohua, Yang, Ling, Zhang, Xinchuang, Hou, Bin, Zhang, Meng, Wu, Mei, Niu, Xuerui, Du, Jiale, Liu, Siyu, and Hao, Yue
- Subjects
PIN diodes ,KELVIN probe force microscopy ,STRAY currents ,FLUORINE ,ELECTRIC fields - Abstract
In this work, a high performance GaN-on-Si quasi vertical PiN diode was demonstrated by the combination of a beveled sidewall and self-aligned fluorine plasma treatment. The didoes achieved a remarkable breakdown voltage ($\text{V}_{\text {BR}}{)}$ of 930 V and an ultra-low reverse leakage current. Meanwhile the didoes showed a low specific on-resistance ($\text{R}_{ \mathrm{\scriptscriptstyle ON},\textit {sp}}$) of 0.43 $\text{m}\Omega \cdot $ cm2, a high on/off current ratio ($\text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}}$) of $10^{{11}}$ , and an excellent Baliga’s figure of merit (BFOM) of 2.01 GW/cm2. The measurement results of X-ray spectroscopy (XPS) and Kelvin Probe Force Microscopy (KPFM) proved the presence of F ions and the decrease of surface potential, which reduced the electric field peak and suppressed the leakage current. These results show a great potential of GaN on Si PiN diode for power applications. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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