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This article presents a 22.6–39.2-GHz reflectionless receiver (RX) capable of reducing the in-band intermodulation and high-order mixing products. Such RX consists of an absorptive IF amplifier, a double-balance passive mixer, and a dual-path noise-canceling low noise amplifier (LNA). The absorptive IF amplifier is utilized to suppress the out-of-band signal reflected back to mixer, which can reduce the intermodulation and high-order mixing products caused by the remixing of the out-of-band signals. Meanwhile, the dual-path noise-canceling LNA is used for achieving low noise figure (NF) in a wide frequency range. To verify the aforementioned principle, a reflectionless RX is implemented and fabricated using a conventional 28-nm CMOS technology. The measurement shows the minimum NF of 3.6 dB and the peak input third-order intercept point (IIP3) of −11.7 dBm. Besides, the proposed RX can support multi-Gb/s, 256-quadratic amplitude modulation (QAM)/1024-QAM modulation signals. [ABSTRACT FROM AUTHOR]

In this article, a distributed-swing-boosting and harmonic-impedance-expanding multi-core oscillator is proposed to achieve low phase noise and high figure-of-merit (FoM), simultaneously. First, a distributed-coupling multi-core topology is introduced to reduce the chip area with no mode ambiguity. Then, the distributed-swing-boosting and harmonic-impedance-expanding structure is developed to boost the gate swing and square-like waveform of $V_{\text {DS}}$. The common-mode (CM) resonances around the second harmonic and the differential-mode (DM) resonances around the third harmonic are utilized to suppress the flicker noise up-conversion and achieve harmonic shaping. Meanwhile, the dual-resonance response expands the high-impedance frequency ranges around the harmonics, and thus, the effect of harmonic shaping can be obtained over a wide frequency range. Fabricated in a 40-nm CMOS process, the oscillator measured exhibits low phase noise and high FoM simultaneously with a compact chip size. The minimum phase noise is −138.9 dBc/Hz at the 1-MHz offset, corresponding to an FoM of 195.1 dBc/Hz. The 1/ $f^{3}$ phase noise corner is 100–130 kHz over the 26.6% tuning range. [ABSTRACT FROM AUTHOR]