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Co-doped SnO2 nanowires were grown by thermal evaporation of a mixture of Tin metal powder and CoCl2 · 6H2O in a tubular furnace. The growth occurs by vapor-solid growth mechanism. Nanowires grew along the sidewall of the alumina boat placed in the tubular furnace and the diameter of these nanowires (as was evident from scanning electron microscopy), was found to be in the range of 50 nm to 200 nm. Co was successfully doped in SnO2 lattice as revealed by X-ray diffraction data and was found to be in Co2+ state in the nanowires as detected by X-ray Photoelectron Spectroscopy measurements. Room temperature magnetic measurements, carried out using Vibrating Sample Magnetometer, indicated ferromagnetic behavior of the nanowires indicating their potential for spintronics applications. With increasing Co doping (upto 1%), the lattice parameters of SnO2 decreased and the saturation magnetization increased, suggesting a strong structure-magnetic property relationship. [ABSTRACT FROM AUTHOR]

Room temperature gas sensing properties of CuO nanowires synthesized by thermal oxidation of copper foils was studied in different configurations: (i) isolated nanowires aligned between two electrodes, (ii) as grown CuO foil consisting of nanowires and (iii) CuO nanowire films. Sensors were studied for response to different gases. Different sensors showed qualitatively different response on exposure to H2S. Isolated nanowires showed high sensitivity, (~200% for 10 ppm of gas) and fast response (30 s) and recovery times (60 s). In these samples, the resistance mainly decreased on exposure to H2S (though a small initial increase was observed). In CuO foils, resistance increased for low concentrations (5-10 ppm) but decreased at high concentrations. In the case of CuO nanowire films, resistance only increased on exposure of H2S (upto 400 ppm). Since CuO is a p-type semiconductor, on exposure to H2S an increase in resistance is expected due to oxygen adsorption related process. Decrease in resistance in some of the sensors was understood in terms of reaction of CuO with H2S resulting in the formation of CuS. [ABSTRACT FROM AUTHOR]