Search

Abstract: Single-crystalline ZnO film with two-dimensional periodic structure was grown on Si(111) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The influence of substrate orientations and growth temperatures was explored for achieving a high-quality ZnO film. It was found that ZnO epilayers grown on Si(111) substrate have better crystalline quality than the one on Si(100), and a higher growth temperature was further confirmed favorable for the attainment of a periodic morphology. The results suggest that our growth method is feasible for the fabrication of ZnO film with periodic structure, which is promising for applications in new photonic devices. [Copyright &y& Elsevier]

Abstract: A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content “quasi-homo” buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry. [Copyright &y& Elsevier]