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Wideband low-noise ΣΔ fractional-N synthesizers pose several design challenges due to the nonlinear time-varying nature of synthesizer building blocks such as phase frequency detectors (PFDs), charge pump, and frequency dividers. Loop nonlinearities can increase close-in phase noise and enhance spurious tones due to intermodulation of high-frequency quantization noise and tonal content; therefore, an accurate simulation model is critical for successful implementation of loop parameters and bandwidth widening techniques. In this paper a closed-loop non-linear simulation model for fractional-N synthesizers is presented. Inherent nonuniform sampling of the PFD is modeled through an event-driven dual-iteration-based technique. The proposed technique generates a vector of piecewise linear time-voltage pairs, defining the voltage-controlled oscillator (VCO) control voltage. This method also lends itself to modeling of cyclostationary thermal and flicker noise generated by time-varying charge-pump current pulses. A flexible third-order ΣΔ modulated RF synthesizer core with integrated loop filter and LC-tank VCO is designed and fabricated in 0.13-μm CMOS process in order to validate the technique experimentally. The proposed modeling technique was able to predict in-band spur power levels with 1.8-dB accuracy, and spur frequency offsets with lower than 400-Hz accuracy with several programmable nonidealities enabled. [ABSTRACT FROM AUTHOR]

Efficient current, voltage, and power sensing are critical blocks for power management, switching regulators, maximum power point tracking (MPPT) circuit, and motor control. This paper presents a standard CMOS and low-power current-to-digital converter (IDC) that senses the current flowing at high-voltage nodes. The proposed sensor uses a CMOS-switched capacitor circuit to sense a dc–dc converter output current and gives digital output without an analog-to-digital converter (ADC), or the need for high-voltage technologies. Compared to the resistor-based current-sensing methods that require current-to-voltage circuit, gain block, and an ADC converter, the proposed sensor is a low-power integrated circuit that achieves high resolution, lower complexity, and lower power consumption. The IDC circuit is fabricated on a 5 V, 0.7 μm, and three metal CMOS technology and occupied less than 10% area (1 mm2 area) compared to other sensors. It consumes 18 mW that is less than 40% power consumed by other sensors, and its current measurement error is below 0.4%. The proposed IDC circuit has been characterized as standalone and with a boost dc–dc regulator and MPPT for photovoltaic systems. [ABSTRACT FROM AUTHOR]

A noise-shaped direct digital IF to RF (DIF2RF) DAC with embedded upconverter mixer is presented. The digital IF signal is noise shaped by a bandpass Σ-Δ modulator with 1-bit IF output followed by a semidigital finite impulse response (FIR) filter. The current mode FIR filter combines scaled values of the local oscillator (LO) signal for performing reconstruction filtering and upconversion in a single module. The DIF2RF design modulates the digital IF signal with a digital LO signal. This topology eliminates the transconductance nonlinearity of conventional mixers and is inherently linear due to single-bit digital IF input. The presented architecture reduces clock jitter sensitivity of 1-bit DACs by masking IF clock transitions with LO signals. A prototype of the DIF2RF DAC is designed and fabricated in a five-layer metal 0.25-μm digital CMOS process. The architecture can be used in low-power software-defined digital-IF transmitters. The DIF2RF DAC consumes 49 mA from a 2.5-V supply, achieving -64.7-dBc third-order intermodulation at 1.03 GHz with a spurious-free dynamic range of 72 dB in a 15-MHz bandwidth. [ABSTRACT FROM AUTHOR]

Frequency synthesizers are fundamental building blocks in radio frequency, communications, and analog signal processing for generating high accuracy oscillatory signals. In general, the frequency synthesizer is the most sensitive block in the system since many of the signal processing elements such as clock, filters, and up/down converters depend on the synthesizer generating a clean sinusoidal signal at the given frequency. For radiation environments, the response and the sensitivity of the phase-lock loop (PLL) and the synthesizer block is very critical. This paper examines the effect of single events (SEE) radiation on the PLL locking and steady state response. The PLL circuits operating at 2.4 GHZ were designed and fabricated using a 0.13 μm CMOS process This paper presents the experimental and simulations results on the SEE radiation effects on the PLL. [ABSTRACT FROM AUTHOR]

A radiation-tolerant digital multiphase current-mode hysteretic point-of-load regulator fabricated on a commercial 180-nm CMOS process is presented. Experiments and simulations are used to demonstrate its single-event immunity and its total-dose tolerance over 100 krad(Si). Key electrical performance parameters are: 5-V input, 0.8–3.3 V output, 10-A load current, 93% peak efficiency, four-phase hysteretic quasi-current-mode buck converter with ±1.5% frequency synchronization, ±3.6% current sharing error, and 1% ripple. [ABSTRACT FROM AUTHOR]

This paper presents a digitally controlled programmable point-of-load regulator for next-generation power systems. A novel digital control scheme was designed to minimize single-event effect (SEE)-induced transient effects. By effectively programming the loop transmission, the POL can trade off transient response time with SET robustness. The IC works with 1 to 5.5 V input voltage, 1–4.5V regulated output voltage, high efficiency (peak efficiency at 94%) and power of up to 5 W. The design was fabricated in the AMI i2t100 0.7 \mum complimentary, metal-oxide semiconductor (CMOS) process and characterized with the Jet Propulsion Laboratory (JPL) pulsed laser system. [ABSTRACT FROM PUBLISHER]

A low-power transceiver for medical implant communication service is presented. The device consists of three subsystems, which perform wake-up signal reception, data-link binary frequency-shift keying (BFSK) reception, and transmission, respectively. A common antenna interface is reused in the three subsystems, reducing circuit complexity and number of external components. Super-regenerative architecture is used for wake-up reception, and gm-boosted common-gate stages are used to optimize receiver (RX) performance with low power consumption. The transmitter employs an all-digital frequency-locked loop to directly drive a class AB power amplifier. The transmitter can alternatively use an injection-locked power oscillator for lower bit rates and power consumption. The integrated circuit is designed and fabricated on a 0.18-\mu\m CMOS process. The wake-up RX achieves a -80-dBm sensitivity for a 50-kb/s signal and a 280-\mu\W dissipation. The BFSK RX achieves a -97-dBm sensitivity for a 75-kb/s signal and a 2-mW power consumption. Finally, the transmitter achieves an output power of -5 dBm for a power consumption of 2.9 mW. [ABSTRACT FROM AUTHOR]

Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880–915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that AM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively. [ABSTRACT FROM AUTHOR]