1. Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays.
- Author
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Li, Zhigang, Cui, Xiangke, Wang, Xiaowei, Wang, Zongpeng, Fang, Minghu, Feng, Shangshen, Liu, Yanping, Chen, Jigen, Wang, Tianle, Liu, Hengji, Xia, Zhenhai, and Wei, Bingqing
- Subjects
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ELECTRON mobility , *CARRIER density , *TRANSITION metals , *CHARGE carrier mobility , *SUPERCONDUCTORS , *HOT carriers , *TEMPERATURE , *SEMICONDUCTOR devices - Abstract
Solid-state electrical conducting materials can be roughly categorized as superconductors, conductors, and semiconductors, depending on their conducting carriers, resistance, and band structures. This research reports the discovery of super-semiconductors, whose resistivity is 3–10 orders of magnitude lower than conventional semiconductors at room temperature. In addition, there is a transition from a metal state to a super-semiconducting state at near room temperatures, which is accompanied by an increase in hole carrier density and the mobility increase in electrons. For the first time, a hole-dominated carrier metal is observed in nanostructured bimetallic arrays near room temperature, and no other special conditions are required. Such a behavior is due to the generation of hot electrons and holes induced by metal plasmon resonance in the infrared range in the nanostructured bimetallic arrays. Our research empowers metals with semiconductor features and paves the way to realize ultra-low-power metal-based semiconductor devices. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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