1. AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade.
- Author
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Lu, Hao, Yang, Ling, Hou, Bin, Zhang, Meng, Wu, Mei, Ma, Xiao-Hua, and Hao, Yue
- Subjects
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INDIUM gallium nitride , *GALLIUM nitride , *MODULATION-doped field-effect transistors , *HOT carriers , *QUALITY factor - Abstract
This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage (Ig–VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the dual-directional sweep, proved by the VDS- and Lg-dependent bi-directional transfer I–V characteristics, can be responsible for these excellent device performances. This work is believed to encourage further study of the AlN/GaN platform to power the future group III-nitrides CMOS technology. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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