1. 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer.
- Author
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Liu, Jie-Long, Zhu, Jie-Jie, Mi, Min-Han, Zhu, Qing, Liu, Si-Yu, Wang, Peng-Fei, Zhou, Yu-Wei, Zhao, Zi-Yue, Zhou, Jiu-Ding, Zhang, Meng, Wu, Mei, Hou, Bin, Wang, Hong, Yang, Ling, Ma, Xiao-Hua, and Hao, Yue
- Subjects
MODULATION-doped field-effect transistors ,POWER density ,PASSIVATION ,X-ray photoelectron spectroscopy ,GALLIUM nitride ,FREQUENCIES of oscillating systems - Abstract
In this work, high-performance millimeter-wave AlGaN/GaN structures for high-electron-mobility transistors (HEMTs) are presented using a Si-rich SiN passivation layer. The analysis of transient and x-ray photoelectron spectroscopy measurements revealed that the presence of the Si-rich SiN layer leads to a decrease in the deep-level surface traps by mitigating the formation of Ga–O bonds. This results in a suppressed current collapse from 11% to 5% as well as a decreased knee voltage (V
knee ). The current gain cutoff frequency and the maximum oscillation frequency of the devices with the Si-rich SiN layer exhibit the values of 74 and 140 GHz, respectively. Moreover, load-pull measurements at 30 GHz show that the devices containing the Si-rich SiN deliver excellent output power density of 8.7 W/mm at Vds = 28 V and high power-added efficiency up to 48% at Vds = 10 V. The enhanced power performance of HEMTs using Si-rich SiN interlayer passivation is attributed to the reduced Vknee , the suppressed current collapse, and the improved drain current. [ABSTRACT FROM AUTHOR]- Published
- 2022
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