1. Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction.
- Author
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De Wolf, Stefaan, Ballif, Christophe, and Kondo, Michio
- Subjects
- *
CHEMICAL kinetics , *SILICON , *POINT defects , *ANNEALING of crystals , *CHEMICAL reduction , *LOW temperatures , *HYDROGENATED amorphous silicon , *SURFACES (Technology) , *THIN films - Abstract
Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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