Search

Your search keyword '"Chen, Kevin J."' showing total 1 results
1 results on '"Chen, Kevin J."'

1. High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications.

Author

Zhou, Qi, Yang, Shu, Chen, Wanjun, Zhang, Bo, Feng, Zhihong, Cai, Shujun, and Chen, Kevin J.

Subjects
*INDIUM compounds, *ELECTRIC potential, *RADIO frequency, *ALLOYS, *LOGIC circuits, *ELECTRIC breakdown, *STRAY currents
Abstract

Highlights: [•] Propose nonalloyed Schottky-Source/Drain technology enabling a gate-first InAlN/GaN HEMTs. [•] The Schottky source can reduce source carrier injection and subthreshold leakage. [•] The gate-first InAlN/GaN HEMTs achieves 229% improvement in breakdown voltage. [•] The Schottky-Source/Drain technology is beneficial to device downscaling. [•] This gate-first InAlN/GaN HEMTs show great promise for self-aligned HEMTs. [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results