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1,556 results

1. Call for Papers: Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices.

Subjects
*LICENSE agreements, *DIGITAL Object Identifiers, *SEMICONDUCTOR manufacturing, *INTELLIGENT sensors, *ELECTRONS
Abstract

Digital Object Identifier 10.1109/ TSM. 2024.3411140Authorized licensed use limited to the terms of the applicable license agreement with IEEE. Restrictions apply. Authorized licensed use limited to the terms of the applicable license agreement with IEEE. Restrictions apply. [Extracted from the article]

Published
2024
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42. Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices.

Subjects
*COMPLEMENTARY metal oxide semiconductors, *ELECTRONS, *DIGITAL Object Identifiers
Abstract

The article offers information on electronics devices, complementary metal–oxide–semiconductor (CMOS) logic, power and memory. Topics discussed include electronics devices with features related to experimental results and theoretical model; include advanced transitory with features of self-heating effect and variability; and discusses power devices like the metal–oxide–semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT).

Published
2019
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44. Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Spintronics-Devices and Circuits".

Subjects
HARD disks, NANOELECTROMECHANICAL systems, TECHNICAL textiles, INDUSTRIAL electronics, ELECTRONS, COMPUTER architecture, OPTICAL disks, MAGNETIC sensors
Abstract

Spintronics is one of the emerging fields for the next-generation nanoscale devices offering better memory and processing capabilities with improved performance levels. It demonstrates great potential in the post-Moore era. Ever since the discovery of Giant Magneto-Resistance (GMR) effect in 1988, spintronics has shown a rapid progress. Recent advances has expanded this technology to the entire electronics industry of sensors, memories, oscillators, quantum information processors, computer architecture, brain inspired computing and various other fields. Spintronics is now one of the most researched areas and is on the verge of becoming a mainstream technology. A hard disk drive (HDD) invented by IBM in 1956, now has a global market revenue of approximately $12bn. Other emerging field of application for this technology is magnetic field sensors that showcased a market revenue of~ $19b in 2018. The magnetic memory production at major foundries such as Samsung, Globalfoundries, Western Digital and TSMC marks the adoption of spintronics technology. However, in order to meet the ever-increasing demands of the industry, innovation in terms of modeling, design, materials, processes, circuits and applications are required. This Special Issue of the IEEE Transactions on Electron Devices will feature the most recent developments and the state-of-the-art in the field of spintronic devices, circuits and new architectures for high performance. [ABSTRACT FROM AUTHOR]

Published
2021
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45. Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs.

Author

Tali, Maris, Garcia Alia, Ruben, Brugger, Markus, Ferlet-Cavrois, Veronique, Corsini, Roberto, Farabolini, Wilfrid, Javanainen, Arto, Kastriotou, Maria, Kettunen, Heikki, Santin, Giovanni, Boatella Polo, Cesar, Tsiligiannis, Georgios, Danzeca, Salvatore, and Virtanen, Ari

Subjects
ELECTRON linac, ELECTRON accelerators, PARTICLE beams, IRRADIATION, ELECTRON beams
Abstract

In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying energies and intensities to omit other possible effects. [ABSTRACT FROM AUTHOR]

Published
2018
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46. Ultrathin Channel Vertical DG MOSFET Fabricated by Using Ion-Bombardment-Retarded Etching.

Author

Masahara, Meishoku, Liu, Yongxun, Hosokawa, Shinichi, Matsukawa, Takashi, Ishii, Kenichi, Tanoue, Hisao, Sakamoto, Kunihiro, Sekigawa, Toshihiro, Yamauchi, Hiromi, Kanemaru, Seigo, and Suzuki, Eiichi

Subjects
METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, METAL oxide semiconductors, ELECTRONS, PERMANENT paper, POSITRONS
Abstract

A vertical ultrathin channel formation process for a vertical type double-gate (DG) MOSFET is proposed. Si wet etching using an alkaline solution has newly been found to be significantly retarded by introducing ion bombardment damage. We have also found that the ion bombardment-retarded etching (IBRE) is independent of ion species and the implanted impurities can easily be transferred to be the dopants for source and drain regions of MOSFETs. By utilizing the IBRE, vertical type DG MOSFETs with a 12-nm-thick vertical channel were fabricated successfully. The fabricated vertical DG MOSFETs clearly exhibit the unique advantage of DG MOSFET5, i.e., high improvement of short-channel effect immunity by reducing the channel thickness. Thanks to the ultrathin channel, very low subthreshold slopes of 69.8 mV/dec. for a p-channel and 71.6 mV/dec for an n-channel vertical DG MOSFET are successfully achieved with the gate length of 100 nm. [ABSTRACT FROM AUTHOR]

Published
2004
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48. Simulation of a Time-Varying Distributed Cathode in a Linear Format Crossed-Field Amplifier.

Author

Pearlman, Marcus and Browning, Jim

Subjects
CATHODES, PARTICLE beam bunching, BIOELECTROCHEMISTRY, PARTICLE beams, MAGNETRONS, ELECTRONS
Abstract

The effects of a temporally modulated, distributed cathode in a linear format crossed-field amplifier (CFA) are simulated in VSim and analyzed. A linear format, 150 MHz, low power (100 W), moderate gain (7 dB), meander line CFA is used as the basis for the simulation model. This paper describes simulations with different time-varying distributed cathodes in which electron injection is modulated at the RF both in-phase and out-of-phase with the RF input. At low RF input power, the modulated electron injection dominates the operation. Injecting in-phase with the RF input shows gain increases from 23 dB at 150 mA to 32 dB at 1 A for low cathode modulation power (<0.1 W). The CFA efficiency increased from 2%–4% to 20%–24% using the electron modulation. The simulation shows distinct cylindrically shaped electron bunches as opposed to spokes because of the synchronous injection. These results suggest that for high power magnetrons electron modulation could improve gain. [ABSTRACT FROM AUTHOR]

Published
2019
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