Search

This paper presents an output external capacitor-less, fully integrated, fast settling NMOS low-dropout (LDO) regulator with adaptively biased error amplifier (EA) for system-on-chip core applications. The adaptive biasing technique increases both loop bandwidth and slew-rate of the LDO by 100% at full load condition without changing no-load quiescent current. Direct feedback to gate-to-source voltage of the NMOS regulation FET provides fast load transient response. The proposed LDO employs a cross-coupled common-gate input based EA, with transconductance boosting, achieving twice unity-gain bandwidth in comparison to a typical folded-cascode common-source input stage. Low output impedance of NMOS regulation stage and low input impedance of the EA reduce load dependent stability issue. The proposed regulator is designed and fabricated in a 0.18- $\mu \text{m}$ CMOS technology with die-area of 0.21 mm2. The LDO generates a regulated output voltage of 1.4–1.6 V from an input voltage of 1.6–1.8 V, consumes 133 $\mu \text{A}$ quiescent current, and supports 0 pF to 50 pF load capacitance. Measured results show 166 mV undershoot with 19 ns settling time for a load step from 9 mA to 40 mA in 350 ps edge-time for zero-load capacitance. After using adaptive biasing, the settling time is reduced by 37% and 36% for 0 pF and 50 pF load, respectively. [ABSTRACT FROM AUTHOR]

A radiation-tolerant digital multiphase current-mode hysteretic point-of-load regulator fabricated on a commercial 180-nm CMOS process is presented. Experiments and simulations are used to demonstrate its single-event immunity and its total-dose tolerance over 100 krad(Si). Key electrical performance parameters are: 5-V input, 0.8–3.3 V output, 10-A load current, 93% peak efficiency, four-phase hysteretic quasi-current-mode buck converter with ±1.5% frequency synchronization, ±3.6% current sharing error, and 1% ripple. [ABSTRACT FROM AUTHOR]

A fully integrated digital low-dropout regulator (DLDO) with a fast transient response, providing a regulated supply for system-on-chip (SoC) power management applications is proposed. Wideband operation and fast transient response are achieved through a transient enhanced proportional-integral controller, without compromising the stability of the DLDO at steady-state operation. The transient enhancement stage boosts loop-gain dynamically during load transients. In the gain boosting mode, the DLDO closed-loop bandwidth is increased, resulting in reduced undershoot/overshoot and fast settling. When the output voltage recovers to the desired level, the boost mode operation is disabled. For a load change with a 4-mA/ns slew rate between 10 and 50 mA, utilizing transient enhancement mode reduced the measured undershoot and overshoot by 35% and 17%, respectively. The characterization results show that the transient enhancement mode can reduce the settling time from 500 to 250 ns for a 10–50-mA load current change. The proposed DLDO operates with an input voltage ranging from 0.84 to 1.24 V, and output voltage ranging from 0.6 to 1 V. The maximum output current of the DLDO is 50 mA and the DLDO achieves a peak current efficiency of 99.2%, with DLDO figure of merit (FOM2) of 63.25 ps. The DLDO prototype chip is fabricated on a 0.13- \mu \textm CMOS technology and occupies a 0.0631-mm2 die area. [ABSTRACT FROM PUBLISHER]

Efficient current, voltage, and power sensing are critical blocks for power management, switching regulators, maximum power point tracking (MPPT) circuit, and motor control. This paper presents a standard CMOS and low-power current-to-digital converter (IDC) that senses the current flowing at high-voltage nodes. The proposed sensor uses a CMOS-switched capacitor circuit to sense a dc–dc converter output current and gives digital output without an analog-to-digital converter (ADC), or the need for high-voltage technologies. Compared to the resistor-based current-sensing methods that require current-to-voltage circuit, gain block, and an ADC converter, the proposed sensor is a low-power integrated circuit that achieves high resolution, lower complexity, and lower power consumption. The IDC circuit is fabricated on a 5 V, 0.7 μm, and three metal CMOS technology and occupied less than 10% area (1 mm2 area) compared to other sensors. It consumes 18 mW that is less than 40% power consumed by other sensors, and its current measurement error is below 0.4%. The proposed IDC circuit has been characterized as standalone and with a boost dc–dc regulator and MPPT for photovoltaic systems. [ABSTRACT FROM AUTHOR]

Digital low-dropout (DLDO) regulators are gaining attention due to their design scalability for distributed multiple voltage domain applications required in state-of-the-art system-on-chips. Due to the discrete nature of the output current and the discrete-time control loop, the steady-state response of the DLDO has inherent output voltage ripple. A hybrid DLDO (HD-LDO) with fast response and stable operation across a wide load range while reducing the output voltage ripple is proposed. In the HD-LDO, a DLDO and a low current analog ripple cancellation amplifier (RCA) work in parallel. The output dc of the RCA is sensed by a 2-bit analog-to-digital converter, and the digitized linear stage current is fed into the DLDO as an error signal. During load transients, a gear-shift controller enables fast transient response using dynamic load estimation. The DLDO suppresses the output dc of the RCA within its current resolution. With this arrangement, a majority of the dc load current is provided by the DLDO and the RCA supplies ripple cancellation current. The HD-LDO is designed and fabricated in a 180-nm CMOS technology, and occupies 0.697 mm2 of the die area. The HD-LDO operates with an input voltage range of 1.43-2.0 V and an output voltage range of 1.0-1.57 V. At 100-mA load current, the HD-LDO achieves a current peak efficiency of 99.11% and a settling time of 15 clock periods with a 0.5-MHz clock for a current switching between 10 and 90 mA. The RCA suppresses fundamental, second, and third harmonics of the switching frequency by 13.7, 13.3, and 14.1 dB, respectively. [ABSTRACT FROM AUTHOR]

An all-digital sliding-mode (ADSM) controlled dc-dc converter, utilizing single-bit oversampled frequency domain digitizers in its feedback path is proposed. Sliding-mode control provides several benefits over the traditional PID control in terms of fast transient response, robustness to parameter and component variations, and low sensitivity to loop disturbances. However, analog implementations of sliding-mode control require several amplifiers in the controller and suffer from process, voltage, and temperature variations. In the proposed approach, the sliding-mode controller (SMC) is implemented digitally; utilizing a first order single-bit ΣΔ frequency to digital converter (ΣΔFDC)-based feedback and reference digitizing ADCs, running at 32-MHz sampling rate. The ADSM regulator achieves 1% settling time in less than 5 μs for a load variation of 600 mA. The SMC uses a high-bandwidth hysteretic differentiator and an integrator to perform the sliding control law in digital domain. The proposed approach overcomes the steady-state error (or dc offset), and band limits the switching frequency, which are the two common problems associated with SMCs. The IC is designed and fabricated on a 0.35-μm CMOS process occupying an active area of 2.72 mm2. [ABSTRACT FROM AUTHOR]