1. Epitaxial synthesis and electronic properties of monolayer Pd2Se3.
- Author
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Fan, Peng, Zhang, Rui-Zi, Qi, Jing, Li, En, Qian, Guo-Jian, Chen, Hui, Wang, Dong-Fei, Zheng, Qi, Wang, Qin, Lin, Xiao, Zhang, Yu-Yang, Du, Shixuan, A, Hofer W, and Gao, Hong-Jun
- Subjects
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MONOMOLECULAR films , *ATOMIC force microscopes , *TUNNELING spectroscopy , *ATOMIC structure , *EPITAXY , *SCANNING tunneling microscopy - Abstract
Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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