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The origins of parasitic heating for photovoltaic (PV) technologies based on silicon, perovskites, and their combination in monolithic tandems are investigated. To quantify heating losses, the cooling score (CS) as a new simple metric, representing the percentage of incident solar irradiance not contributing to module heating is introduced. This is a function of both the optical structure and power conversion efficiency (PCE) of the PV modules and allows a fair comparison between different technologies under identical performance‐evaluation scenarios. Silicon single‐junction devices have the lowest CS due to their low bandgap (causing significant carrier thermalization losses) and their use of light‐trapping structures to increase their PCE which also undesirably increases parasitic absorption of sub‐bandgap photons. Conversely, perovskite single‐junction devices show the highest CS in all studied performance‐evaluation scenarios thanks to their wider bandgap and high absorption coefficient, enabling absorption of all solar photons that may contribute to the photocurrent without requiring light‐trapping structures. While perovskite/silicon tandems minimize thermalization losses, they also usually employ light‐trapping structures in their bottom cell to increase their PCE, which lowers their CS. Through simulation and outdoor experiments, it is demonstrated that an efficient module‐cooling environment may significantly suppress the detrimental effects associated with a low CS. [ABSTRACT FROM AUTHOR]

Over the past few years, perovskite solar cells have arisen as a technology to potentially side with mainstream silicon photovoltaics (PVs) to help drive the transition towards renewable sources of energy. The coupling of perovskites with silicon in a tandem configuration may accelerate this development due to the remarkably high power conversion efficiencies possible with such devices. However, most of the perovskite/silicon tandem achievements so far have been confined to the lab environment, with only a few reported tests under outdoor conditions, using packaged devices. Nevertheless, one of the major challenges for perovskite/silicon tandem technologies, in addition to scale‐up, lies in the cell‐to‐module (CTM) translation, which for the perovskite/silicon tandem concept is complicated by perovskite‐imposed constrains such as a low‐temperature resilience, imposing challenges regarding tabbing and lamination, as well as a high sensitivity to moisture ingress, mandating the search for adequate encapsulation materials and methods. Herein, these challenges are described and assessed in depth and a perspective on future directions toward module design, tailored for perovskite/silicon tandem PVs is given, combining high performance with excellent durability. The discussion also holds relevance for all‐perovskite and other emerging PV technologies seeking market entry. [ABSTRACT FROM AUTHOR]

Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐dissociated CO2 is investigated to grow in situ thin (<2 nm) SiOx films on c‐Si wafers as tunnel‐oxides for plasma‐deposited, hole‐collecting (i.e., p‐type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state‐of‐the‐art wet‐chemical oxides. As a result, p‐type polysilicon contacts are achieved on n‐type c‐Si wafers that combine excellent surface passivation, resulting in an implied open‐circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm2. [ABSTRACT FROM AUTHOR]

Passivating contacts consisting of doped polycrystalline silicon (poly‐Si) on a thin tunnel‐oxide enable excellent operating voltages for crystalline silicon solar cells. However, hole‐collecting contacts based on boron‐doped poly‐Si do not yet reach their full surface‐passivation potential, likely due to boron diffusion during annealing. In this work, the authors show how the insertion of a thin intrinsic silicon buffer layer between the silicon oxide and poly‐Si is effective in improving the contact passivation. By tailoring the microstructure of the buffer layer, the chemical passivation and contact resistivity are simultaneously significantly improved. On device level, the buffer layer enables a ≈30 mV open‐circuit voltage enhancement and 1.4% absolute gain in power conversion efficiency. [ABSTRACT FROM AUTHOR]

Abstract: The device physics of commercially dominant diffused‐junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so‐called passivating‐contact solar cell technologies have become prominent, with Kaneka setting the world's silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating‐contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self‐consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J‐V, light J‐V, C‐V, admittance spectroscopy, and Suns‐Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process‐to‐module modeling framework to establish the module's performance limits. We expect that our proposed guidelines resulting from this multiscale and self‐consistent framework will improve the performance of future SHJ cells as well as other passivating contact‐based solar cells. [ABSTRACT FROM AUTHOR]