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In this brief, a harmonic-controlled substrate-integrated defected ground structure (SIDGS) resonator with tuning capacitor is proposed for the design of tunable filter. Such resonator exhibits a harmonic-controlled characteristic. The fundamental resonant frequency can be properly tuned, while the spurious resonance is controlled at much higher frequency to achieve a wide stopband. To verify the principle, a tunable bandpass filter (BPF) is designed and fabricated based on the resonator. The center frequency can be tuned from 1.75 to 2.7 GHz. Meanwhile, the stopband can extend up to 9.5 GHz with a rejection level of 20 dB for all tuning cases. The BPF also exhibits low insertion loss (i.e., 1.1–1.9 dB) and compact size (i.e., 0.07 ${\lambda _{g}}\,\,{\times }\,\,0.08\,\,{\lambda _{g}}$ , where ${\lambda _{g}}$ is the microstrip guided wavelength at the 1.75 GHz). [ABSTRACT FROM AUTHOR]

In this article, two types of substrate-integrated defected ground structure (SIDGS) resonant cells with wide upper stopband and low radiation loss are presented for filter implementation. Such SIDGS resonant cells are composed of two dissimilar DGSs surrounded by the bottom ground and metal-vias, which cannot only introduce wide stopband with low radiation loss but also be flexible for integration. Based on the aforementioned SIDGS resonant cells, single- and dual-band bandpass filters (BPFs) are designed and fabricated. The single-band BPF centered at 2.40 GHz exhibits an ultrawide upper stopband up to 19.7 GHz with a rejection level of 31 dB, whereas the measured stopband total loss (i.e., including radiation, metal, and substrate loss) remains about 30% up to 19.3 GHz. The dual-band BPF operated at 2.10 and 3.78 GHz exhibits an ultrawide upper stopband up to 17.8 GHz with a rejection level of 23 dB, whereas the measured stopband total loss is less than 16% up to 11.4 GHz. [ABSTRACT FROM AUTHOR]

A wideband hybrid mode-switching push–push oscillator with low phase noise is presented in this paper. To achieve the wide tuning range, the inductive and capacitive hybrid mode-switching technique is proposed for the first time. It introduces more freedom of design parameters (i.e., inductance and capacitance) in the resonant tank. Under certain tuning range requirement, the hybrid mode-switching oscillator achieves higher input impedance of the resonator compared to the conventional mode-switching oscillators. Meanwhile, a transformer-coupled inductor ring with symmetrical layout configuration is proposed to realize the switch-less hybrid mode switching, which further improves the circuit performance at sub-THz. Therefore, a good phase noise performance can be obtained within a wide tuning range, which leads to a relaxed tradeoff between the phase noise and tuning range. To verify the aforementioned mechanism operating at sub-THz band, a hybrid mode-switching oscillator based on the dual-mode push–push topology is proposed and fabricated in a conventional 28-nm CMOS technology. The measured results show a 21.7% tuning range with the center frequency of 169.6 GHz and a state-of-the-art FoMT of −180.6 dBc/Hz. The core circuit only occupies 0.039 mm2, while drawing 95 mW with a 0.9-V supply. [ABSTRACT FROM AUTHOR]