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Reports that the Tohoku University researchers of Sendai, Japan, have applied pulse-time modulation technology to tailor plasma composition for specific processes. Generation of positive ions and radicals in the plasma; Application of the designed plasmas to solve specifuic manufacturing problems in etching; Control of the N density in plasma nitridization of ultrathin gate dielectric layers.

Reports on the development of a fluorocarbon solvent and semiconductor dry-etching parameter of zero by Zeon Corp. in Tokyo, Japan. Identification of a small global-warming potential; Presence of atmospheric life required to reduce concentrations; Availability and pricing of the product.

Discusses the outcome of the annual progress update meeting of Selete company in Tokyo, Japan in 2001. Plans of the Asuka Project researchers to select tools for the government's research fab in Tsukuba; Discussion on the plan of a Selete division for a node equipment and materials development; Update on the dry etching technology.