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Two new quaternary selenides, namely Ba4Ga4SnSe12 and Ba6Ga2SnSe11, have been synthesized for the first time, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system. Ba4Ga4SnSe12 crystallizes in the non-centrosymmetric space group P4̅21/c of the tetragonal system and has a three-dimensional structure. Its three-dimensional framework is built up from corner-sharing GaSe4 and SnSe4 tetrahedra with eight-coordinated Ba2+ cations residing in the cavities. Ba6Ga2SnSe11 crystallizes in a new structure type in the monoclinic centrosymmetric space group P21/c. The structure of Ba6Ga2SnSe11 features a zero-dimensional structure containing totally isolated distorted SnSe4 tetrahedra and a discrete Ga2Se7 unit with Ba2+ cations located between them. On the basis of the diffuse-reflectance spectra, the band gaps are 2.16 (2) eV and 1.99 (2) eV for Ba4Ga4SnSe12 and Ba6Ga2SnSe11 respectively. In addition, the electronic structure calculation of Ba4Ga4SnSe12 indicates that it is a direct-gap semiconductor with the band gap mainly determined by the [Ga4SnSe12]8− anionic framework. [ABSTRACT FROM AUTHOR]

Two new quaternary selenides, namely Ba4Ga4SnSe12 and Ba6Ga2SnSe11, have been synthesized for the first time, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system. Ba4Ga4SnSe12 crystallizes in the non-centrosymmetric space group P4̅21/c of the tetragonal system and has a three-dimensional structure. Its three-dimensional framework is built up from corner-sharing GaSe4 and SnSe4 tetrahedra with eight-coordinated Ba2+ cations residing in the cavities. Ba6Ga2SnSe11 crystallizes in a new structure type in the monoclinic centrosymmetric space group P21/c. The structure of Ba6Ga2SnSe11 features a zero-dimensional structure containing totally isolated distorted SnSe4 tetrahedra and a discrete Ga2Se7 unit with Ba2+ cations located between them. On the basis of the diffuse-reflectance spectra, the band gaps are 2.16 (2) eV and 1.99 (2) eV for Ba4Ga4SnSe12 and Ba6Ga2SnSe11 respectively. In addition, the electronic structure calculation of Ba4Ga4SnSe12 indicates that it is a direct-gap semiconductor with the band gap mainly determined by the [Ga4SnSe12]8− anionic framework. [ABSTRACT FROM AUTHOR]

The first two members in the quaternary A/A′/M/Q (A = alkali metal; A′ = alkaline-earth metal; M = As, Sb, Bi; Q = S, Se, Te) system, namely the KBaMSe 3 (M = As, Sb) selenides, have been synthesized by solid state reactions. They are isostructural and crystallize in the centrosymmetric space group P 2 1 / c of the monoclinic system. In the structure, the trivalent M atom (M = As, Sb) is coordinated to three Se atoms forming a trigonal pyramid with the Se atoms serving as the triangle base, showing the stereochemical activity of the ns 2 lone pair electron. The MSe 3 (M = As, Sb) trigonal pyramids are totally isolated from each other with K + and Ba 2+ cations located between them. The optical band gaps of 2.26 (2) eV for KBaAsSe 3 and 2.04 (2) eV for KBaSbSe 3 , were deduced from the diffuse reflectance spectra. The first principles calculations were performed to study the electronic structures of KBaMSe 3 (M = As, Sb) compounds and the results indicated that these two compounds are indirect band gap semiconductors. [ABSTRACT FROM AUTHOR]