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In this article, we demonstrate a high-performance Pt/NbOx/Ru selector based on metal–insulator transition (MIT), which exhibits low leakage current (5.67 × 10 −5 A/cm2), excellent endurance (>106), and ultrahigh uniformity (<2.5%) in particular and performs great potential to achieve 3-D storage integration. Furthermore, the decrease of the threshold voltage drift and the improvement of stability can be interpreted as the formation of RuO2 layer at the interface between Ru electrode and oxide layer. The application of Ru in selector provides the industry with a choice to enhance the uniformity and stability. [ABSTRACT FROM AUTHOR]

In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching (CRS) by varying SET process current compliance. The conductive filament conduction mechanism of BRS could be verified by electrical characteristics and reliable data fitting. Through increasing current compliance of the SET process, CRS could be achieved due to higher activity of oxygen vacancies originated from the intensified thermal effect. This paper was beneficial to understand the switching mechanisms of BRS and CRS and provide a method to realize interconversion. Moreover, it was also a potential and promising device to be applied in the neurosynaptic biomimetic field. [ABSTRACT FROM AUTHOR]