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The recent trends in nanotechnology have led to an improvement in the manufacturing quality of smaller mechanical, electronics, and optical products and devices; all the attention is focused on producing compact, portable, and lightweight equipment and devices to reduce the overall energy consumption. Nanofibers are increasingly being used in a variety of applications. As a result, the researcher focuses on the development of nanofibers. They can be produced by various techniques, but the electrospinning method is the most commonly used in the industry. Polymer solutions can be used to create fibers with diameters, which has a high rate of production and requires a relatively low cost. In this work, an effort is made to produce nanofibers of polyacrylonitrile (PAN) insolvent dimethyl formamide (DMF) that have a minimum diameter. Four important controllable parameters are considered, which can affect the electrospinning process and resultant PAN nanofibers: flow rate, applied voltage, concentration, and distance between the collectors drum and syringe tip. The Taguchi design approach has been used to find the optimized electrospinning parameters that result in the minimum PAN nanofiber diameter. The diameter and surface morphology of PAN nanofibers were analyzed using a scanning electron microscope (SEM). The results were used to find the variance (ANOVA) analysis, which explains the significance of the parameters on the diameter of PAN nanofiber and predicts that flow rate is the most dominating parameter for PAN nanofiber diameter. The optimized set of produces minimum fiber diameter of 58.467 nm. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • Demonstration of low-cost organic (cellulose fiber) non-volatile memory device. • Excellent endurance for 6 × 103 resistive switching cycles with 10 x memory window. • Data retention is extended for the 3 × 102 seconds without any degradation. • Resistive switching is due to the formation and breaking of Ag filament. Abstract The present manuscript reports the development of Ag/cellulose fibers/Al memory device using the electrospinning technique. The morphological characterization suggested that the active layer is composed of micro-fibers. The developed device shows fingerprint pinched hysteresis loop of the memristive device in I–V plane without any additional electroforming step. An excellent endurance for 6 × 103 resistive switching cycles with 10 x memory window is achieved. Furthermore, the data retention capability of the developed device is extended for the 3 × 102 seconds without any observable degradation in the resistance states. The statistical results suggested that the high resistance state loosely distributed whereas tight distribution is observed for low resistance state. The electrical characterization results suggested that the formation and breaking of Ag conductive filament in the active cellulose fiber layer are responsible for the bipolar resistive switching effect. Our results suggested that the cellulose fibers based memristive device is a potential candidate for the organic non-volatile memory application. [ABSTRACT FROM AUTHOR]