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Light-induced degradation has been identified to be a critical issue for most silicon-based solar cell technologies. This study presents an observation of an opposite light-induced enhancement (LIE) effect in photovoltaic performance in poly(3,4-ethylthiophene):polystyrenesulfonate/n-Si organicinorganic hybrid solar cells. The reduced density of interface states under light soaking (LS) is found to be responsible for the LIE of the hybrid solar cells. An increased minor carrier lifetime under LS and a switchable photoluminescence intensity while applying a voltage bias are observed, providing evidence for the underlying physical mechanism [ABSTRACT FROM AUTHOR]

The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1-5 Ω·cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708mV and 697mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism. [ABSTRACT FROM AUTHOR]