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Two new bithiophene imide (BTI)-based n-type polymers were synthesized. f-BTI2-FT based on a fused BTI dimer showed a smaller band gap, a lower LUMO, and higher crystallinity than s-BTI2-FT containing a BTI dimer connected through a single bond. s-BTI2-FT exhibited a remarkable electron mobility of 0.82 cm2 V−1 s−1, and f-BTI2-FT showed a further improved mobility of 1.13 cm2 V−1 s−1 in transistors. When blended with the polymer donor PTB7-Th, f-BTI2-FT-based all-polymer solar cells (all-PSCs) attained a PCE of 6.85 %, the highest value for an all-PSC not based on naphthalene (or perylene) diimide polymer acceptors. However, s-BTI2-FT all-PSCs showed nearly no photovoltaic effect. The results demonstrate that f-BTI2-FT is one of most promising n-type polymers and that ring fusion offers an effective approach for designing polymers with improved electrical properties. [ABSTRACT FROM AUTHOR]

Unreacted lead iodide is commonly believed to be beneficial to the efficiency of methylammonium lead iodide perovskite based solar cells, since it has been proposed to passivate the defects in perovskite grain boundaries. However, it is shown here that the presence of unreacted PbI2 results in an intrinsic instability of the film under illumination, leading to the film degradation under inert atmosphere and faster degradation upon exposure to illumination and humidity. The perovskite films without lead iodide have improved stability, but lower efficiency due to inferior film morphology (smaller grain size, the presence of pinholes). Optimization of the deposition process resulted in PbI2 -free perovskite films giving comparable efficiency to those with excess PbI2 (14.2 ± 1.3% compared to 15.1 ± 0.9%) Thus, optimization of the deposition process for PbI2 -free films leads to dense, pinhole-free, large grain size perovskite films which result in cells with high efficiency without detrimental effects on the film photostability caused by excess PbI2 . However, it should be noted that for encapsulated devices illuminated through the substrate (fluorine-doped tin oxide glass, TiO2 film), film photostability is not a key factor in the device degradation. [ABSTRACT FROM AUTHOR]

Two triimide‐functionalized n‐type acceptor polymers are designed and synthesized, which show narrower bandgap, lower‐lying frontier molecular orbital energy levels, and improved film morphology than the diimide‐functionalized analogue polymers. When blended with a p‐type donor polymer semiconductor PTB7‐Th, an outstanding power conversion efficiency of 8.98% with a remarkable open‐circuit voltage of 1.03 V is attained. This efficiency is among the highest values in all‐polymer solar cells (all‐PSCs) reported till today, surpassing that (6.85%) of the diimide‐functionalized analogue polymers by a big margin and even higher than that (8.69%) of the fullerene‐based solar cells. The results demonstrate that the triimide‐functionalized f‐BTI3 is an excellent building block for developing n‐type polymer semiconductors, and the polymer f‐BTI3‐T is among the best‐performing n‐type polymers for applications in all‐PSCs. The structure–property correlations of these imide‐functionalized polymer semiconductors offer important guides for developing high‐performance n‐type polymer semiconductors. [ABSTRACT FROM AUTHOR]