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Conjugated polymers (CPs) offer the potential for sustainable semiconductor devices due to their low cost and inherent molecular self-assembly. Enhanced crystallinity and molecular orientation in thin films of solution-processable CPs have significantly improved organic electronic device performance. In this work, three methods, namely spin coating, dip coating, and unidirectional floating-film transfer method (UFTM), were utilized with their parametric optimization for fabricating RR-P3HT films. These films were then utilized for their characterization via optical and microstructural analysis to elucidate dominant roles of molecular orientation and crystallinity in controlling charge transport in organic field-effect transistors (OFETs). OFETs fabricated by RR-P3HT thin films using spin coating and dip coating displayed field-effect mobility (μ) of 8.0 × 10−4 cm2V−1s−1 and 1.3 × 10−3 cm2V−1s−1, respectively. This two-time enhancement in µ for dip-coated films was attributed to its enhanced crystallinity. Interestingly, UFTM film-based OFETs demonstrated μ of 7.0 × 10−2 cm2V−1s−1, >100 times increment as compared to its spin-coated counterpart. This superior device performance is attributed to the synergistic influence of higher crystallinity and molecular orientation. Since the crystallinity of dip-coated and UFTM-thin films are similar, ~50 times improved µ of UFTM thin films, this suggests a dominant role of molecular orientation as compared to crystallinity in controlling the charge transport.

BN50/NiO50 and Au-loaded BN50/NiO50 nanocomposite films were separately fabricated on the glass substrates for carrier transport and photoconductivity properties. X-ray diffraction pattern of the films show the hexagonal structure of BN and presence of defect states by Nelson Riley factor analysis. Morphological images show spherical shaped particles with highly porous structure. The incorporation of NiO may hindered growth of BN layers and resulted in spherical particles. Temperature-dependent conductivity describes semiconductor transport behaviour for deposited nanocomposite films. Thermal activation conduction with low activation energy (∼0.308 eV) may be responsible for the resulting conductivity. Further, the light intensity dependent photoelectrical properties of BN50/NiO50 and Au-loaded BN50/NiO50 nanocomposites have been explored. The effect of Au nanoparticles loading on enhanced photo-conductivities (∼22% increase) than bare nanocomposite film has been elaborated by proposed mechanism. This study provided the insightful information for carrier transport and photoconductivity of BN-based nanocomposites.

The sol-gel spin coating method was used for the preparation of the Zinc Oxide which was coated over polymer, transparent, and glass translucent substrates and characterized with the help of a UV-Vis Spectroscope. The wavelength bandgap of those samples was found to be 296nm, 310.5nm, and 330nm respectively. The actual band gap of ZnO is 388nm. Similarly, their optical bandgap energy calculated by the Tauc Plot method were 3.641eV, 3.385eV, and 3.495 eV respectively. The transparent polymer slide has the lowest wavelength bandgap and the translucent glass slide has the highest. Further, the bandgap’s value differs from its actual value to the difference in the absorption process due to the presence of the substrate. These results suggest that the choice of substrate can significantly impact the optical properties and performance of the zinc oxide thin film. This result can be applied in developing and optimizing zinc oxide thin films for various purposes, such as in solar cells, sensors, and optoelectronics. By carefully selecting the substrate, it may be possible to tailor the bandgap energy and other optical properties of the thin film to better suit the specific application.

Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces that do not seed epitaxy. Film-substrate bonding is usually weakened by harnessing natural van der Waals layers (e.g., graphene) on substrate surfaces, but this is difficult to achieve in non-layered materials. Here, we demonstrate van der Waals epitaxy of stress-free films of a non-layered material VO2 on mica. The films exhibit out-of-plane 010 texture with three in-plane orientations inherited from the crystallographic domains of the substrate. The lattice parameters are invariant with film thickness, indicating weak film-substrate bonding and complete interfacial stress relaxation. The out-of-plane domain size scales monotonically with film thickness, but the in-plane domain size exhibits a minimum, indicating that the nucleation of large in-plane domains supports subsequent island growth. Complementary ab initio investigations suggest that VO2 nucleation and van der Waals epitaxy involves subtle polarization effects around, and the active participation of, surface potassium atoms on the mica surface. The VO2 films show a narrow domain-size-sensitive electrical-conductivity-temperature hysteresis. These results offer promise for tuning the properties of stress-free van der Waals epitaxial films of non-layered materials such as VO2 through microstructure control.

Abstract The increasing demand for high‐performance piezoelectric materials and toxicity and thermal stability issues of the widely used lead zirconate titanates (PZT) have spurred a search for better alternatives in electronic devices. In comparison to PZT, group III nitrides such as aluminum nitride (AlN), are only weakly piezoelectric, but doping AlN with scandium (Sc) improves the piezoelectric response by nearly 500%. Relative to PZT, doped‐AlN piezoelectric materials are advantageous because they are far more compatible with complementary metal–oxide–semiconductor (CMOS) materials, and they maintain both piezoelectric and thermodynamic stability up to very high temperatures. Unfortunately, rare‐earth metals are notoriously expensive, and fabricating stable films with rare‐earth dopants is also challenging, limiting their use in industrial applications. In this work, ab initio calculations are combined with targeted fabrication and experimentation to identify alternative earth‐abundant dopants for AlN from the periodic table d‐block. Amongst the 23 elements screened, it is found that group IVB metals, titanium, zirconium, and hafnium induce large piezoelectric enhancements comparable to Sc. This improvement is traced to shifts in the atomic sublattice structure and changes in the local charge states. In demonstrating a highly accessible and affordable path for technological adaptation of AlN‐based piezoelectrics, this work provides the foundation for sustainable, next‐generation electronics.

Abstract Actinide materials have various applications that range from nuclear energy to quantum computing. Most current efforts have focused on bulk actinide materials. Tuning functional properties by using strain engineering in epitaxial thin films is largely lacking. Using uranium dioxide (UO2) as a model system, in this work, the authors explore strain engineering in actinide epitaxial thin films and investigate the origin of induced ferromagnetism in an antiferromagnet UO2. It is found that UO2+x thin films are hypostoichiometric (x0) with in‐plane compressive strain. Different from strain engineering in non‐actinide oxide thin films, the epitaxial strain in UO2 is accommodated by point defects such as vacancies and interstitials due to the low formation energy. Both epitaxial strain and strain relaxation induced point defects such as oxygen/uranium vacancies and oxygen/uranium interstitials can distort magnetic structure and result in magnetic moments. This work reveals the correlation among strain, point defects and ferromagnetism in strain engineered UO2+x thin films and the results offer new opportunities to understand the influence of coupled order parameters on the emergent properties of many other actinide thin films.

Abstract A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO3 (STO) heterostructures. By using La0.95Sr0.05TiO3 (LSTO) epitaxially grown on different single crystal substrates (such as STO, GdScO3, LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and CeO2 buffered STO) as the model systems, the formation of a conducting substrate surface layer (CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10–4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while neither annealing nor the growth of an Au layer alone at the exact same growth condition generates the CSSL in STO. It demonstrates that the oxide layer actively pulls oxygen from STO substrate at given growth conditions, leading to the formation of the CSSL. The observations emphasize the oxygen transfer across film/substrate interface during the synthesis of oxide heterostructures playing a critical role in functional properties.

WN thin films were synthesised on silicon (100) substrate by varying the nitrogen flow rate (NFR) at a substrate temperature of 300°C for the initial 15 min using RF magnetron sputtering. With the increase in NFR from 1.58, 5.29 and 10 sccm (standard cubic centimetres per minute), the FCC β-W2N phase was converted to mixed phases of FCC β-W2N and hexagonal δ-WN, and further to amorphous phases. Likewise, XPS results indicated the presence of W-N phases. In addition, structural and morphological studies confirmed the presence of dense films at 1.58 sccm of NFR with a thickness of 430 nm and a surface roughness of 0.99 ± 0.16 nm. Moreover, the film with β-W2N phase (at 1.58 sccm of N2 flow) exhibited high hardness and elastic modulus values of 28.36 ± 2.57 GPa and 149.72 ± 8.04 GPa, and better scratch resistance with average coefficient of friction (COF) value of 0.303, making it best suitable for hard coating applications. [ABSTRACT FROM AUTHOR]

Magnesium oxide remained interesting from long time for several important phenomena like; defect induced magnetism, spin electron reflectivity, broad laser emission etc. Moreover, nanostructures of this material exhibited suitability for different kinds of applications ranging from wastewater treatment to spintronics depending upon their shape and size. In this way, researchers had grown nanostructures in the form of nanoparticles, thin films, nanotubes, nanowalls, nanobelts. Though nanoparticles and thin films are well known form of nanostructures and wide variety of synthesis approaches are available, however, limited methodology for other nanostructures are available. In order to grow these nanostructures in an optimized way an understanding of these methods is essential. Thus, this review article depicts an overview of various approaches for design of different kinds of nanostructures.

We report the detailed investigation of tungsten disulfide (WS2) wrapped tungsten trioxide (WO3) nanocomposites as electrode materials for electrochromic devices. The WS2/WO3 nanocomposite was prepared by exfoliation of WS2 in WO3, where WO3 was prepared by acidic co-precipitation technique. X-ray diffraction spectra were used to study the structural properties of the prepared materials. The results show that agglomeration due to pinning of grain boundaries by WS2 leads to an increase in the crystallite size of the nanocomposites, confirming the formation of WS2/WO3. Field-emission scanning electron microscopy and high-resolution tunnelling electron microscpy were used to study the nanocomposites morphology. The results show that the relative distribution of nanoparticles is more uniform compared to WO3 after the addition of WS2. The shape of WO3 changes from spherical to square nanosheets with good dispersion. The electrochemical properties of the prepared samples were investigated by chronoamperometry, charge/discharge,and cyclic voltammetry. The lower peak separation between oxidation and reduction resulted from the fact that the peaks of the anodic and cathodic current densities of the nanocomposite (WS2/WO3) were shifted more to higher and lower potentials, respectively. This suggests faster charge transfer kinetics. UV/Vis spectroscopy was used to investigate the electrochromic and optical properties of the fabricated ECDs. The WS2/WO3-based ECDs exhibit a high colouring efficiency of 61 cm²C-1. The study shows that ECDs based on WS2/WO3 exhibit better electrochromic performance compared to WO3 ECDs. [ABSTRACT FROM AUTHOR]

We report on the growth of stoichiometric, single-crystal YCrO3 epitaxial thin films on (001) SrTiO3 substrates using pulsed laser deposition. X-ray diffraction and atomic force microscopy reveal that the films grew in a layer-by-layer fashion with excellent crystallinity and atomically smooth surfaces. Magnetization measurements demonstrate that the material is ferromagnetic below 144 K. The temperature dependence of dielectric permittivity shows a characteristic relaxor-ferroelectric behavior at TC = 375–408 K. A dielectric anomaly at the magnetic transition temperature indicates a close correlation between magnetic and electric order parameters in these multiferroic YCrO3 films. These findings provide guidance to synthesize rare-earth, chromite-based multifunctional heterostructures and build a foundation for future studies on the understanding of magnetoelectric effects in similar material systems.

We have conducted in situ measurements of the surface plasmons and electrical resistivity of noble metal thin films. We present results for the electrical resistivity of these materials as functions of the angle of incidence for p-polarized light of wavelength λ = 632 nm in the Kretschmann configuration optical system. We observe a significantly lower resistivity (higher conductivity) under resonance conditions for the surface plasmon polaritons. The resistivity data are supported by COMSOL simulations of the evanescent fields associated with the surface plasmons. We discuss the resistivity data in terms of the theoretical models, which suggest that the electrical conductivity of the transition metals is sensitive to Umklapp electron-electron scattering and attractive interactions between free electrons because of the screening of the d-band electrons by the s-band electrons.

The room temperature electronic transport properties of 1 μm thick Bi0.4Sb1.6Te3 (BST) films correlate with overall microstructural quality. Films with homogeneous composition are deposited onto fused silica substrates, capped with SiN to prevent both oxidation and Te loss, and postannealed to temperatures ranging from 200 to 450 °C. BST grain sizes and (00l) orientations improve dramatically with annealing to 375 °C, with smaller increases to 450 °C. Tiny few-nanometer-sized voids in the as-deposited film grain boundaries coalesce into larger void sizes up to 300 nm with annealing to 350 °C; the smallest voids continue coalescing with annealing to 450 °C. These voids are decorated with few-nanometer-sized Sb clusters that increase in number with increasing annealing temperatures, reducing the Sb content of the remaining BST film matrix. Resistivity decreases linearly with increasing temperature over the entire range studied, consistent with improving crystalline quality. The Seebeck coefficient also improves with crystalline quality to 350 °C, above which void coalescence and reduced Sb content from the BST matrix correlate with a decrease in the Seebeck coefficient. Nevertheless, a plateau exists for an optimal power factor between 350 and 450 °C, implying thermal stability to higher temperatures than previously reported. [ABSTRACT FROM AUTHOR]

Highly transparent thin films of aluminium doped ZnO along with specific silver co-doping are deposited by sol-gel spin coating, which show preferred single orientation along (100) plane. Presence of Al dopant reduces, whereas co-doping with Ag improves crystallinity. Films show sharp absorption in near UV region and band gap observes minor shifts. UV and blue emission peaks are seen in the photoluminescence spectra. UV and blue emission peaks, respectively, demonstrate a fairly large i.e. 43% and 77% rise in the normalised intensity. Presence of Ag causes rise in UV peak because of enhanced excitonic recombination probability. Rise of blue emission intensity is ascribed to creation of Ag-Al interstitials. Surface roughness increases to 210.0 nm with Al increment into ZnO and drops drastically to 81.1 nm by Ag co-doping. Boundaries of nanostructures club together with rise in Al amount and thereafter Ag co-doping is seen to reduce the particle size. [ABSTRACT FROM AUTHOR]

Nanocrystalline Cd1−XZnXS thin films (X = 0.2, 0.4, 0.6, 0.8) have been grown on glass substrate by spray pyrolysis technique using equimolar concentration aqueous solution of cadmium chloride, zinc acetate and thiourea. Prepared thin films have been characterised by UV–vis spectrophotometer, X-ray diffractometer, SEM/EDAX analysis and two-point probe set-up. The optical band gap of the films has been studied by transmission spectra in wavelength range 325–600 nm. It has been observed that optical band gap increases with increasing zinc concentration. The X-ray diffraction pattern of films indicated that the films are polycrystalline with hexagonal grain structure. The lattice parameters of prepared Cd1−XZnXS films decrease with increase in zinc content. SEM/ EDAX analysis consolidates the formation of ternary compound. The DC electrical conductivity and activation energy of the films has been measured in vacuum by a two-point probe set-up. It has been observed that the electrical conductivity decreases with increasing Zn concentration in films. [ABSTRACT FROM AUTHOR]

In this paper we show that experimentally realizable apparently piezoelectric thin-film superlattices can be created from nonpiezoelectric materials provided an odd-order (e.g., trilayer) stacking sequence is used. The size-dependent mechanism of flexoelectricity, which couples gradients of strain to polarization, allows such a possibility. We present closed-form analytical expressions for the response of various thin-film and superlattice configurations. We also clarify some of the subtleties that arise in considering interface boundary conditions in the theory of flexoelectricity as well as the relationship of flexoelectricity to the frequently used polarization gradient terms used in modeling ferroelectrics. We find that for certain (optimum) material combinations and length scales, thin-film superlattices yielding apparent piezoelectricity close to 75% of ferroelectric barium titanate may be achievable. [ABSTRACT FROM AUTHOR]

Amorphous Fe73.9Nb3.1Cu0.9Si13.2B8.9 thin films have been produced by ion beam sputtering with two different beam energies (500 and 1000 eV). Magnetic measurements indicate that the samples display a uniaxial magnetic anisotropy, especially for samples prepared with the lower beam energy. Magnetization relaxation has been measured on both films with an alternating gradient force magnetometer and magneto-optical Kerr effect. Magnetization relaxation occurs on time scales of tens of seconds and can be described with a single stretched exponential function. Relaxation intensity turns out to be higher when measured along the easy magnetization axis. [ABSTRACT FROM AUTHOR]