12 results on '"Gupta, S. K."'
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2. AB INITIO STUDIES OF STRUCTURAL, ELECTRONIC, OPTICAL,ELASTIC AND THERMAL PROPERTIES OF COPPER THALLIUMDICHALCOGENIDES (CuTiX2: X=S, Se, Te).
- Author
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TOMAR, S., GAUTAM, R., PRAVESH, NEGI, C. M. S., GUPTA, S. K., BHARDWAJ, S. R., and VERMA, A. S.
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X-ray diffraction , *THIN films , *NANOPARTICLES , *CRYSTAL structure , *MICROSTRUCTURE - Abstract
The ground state structural, electronic, optical, elastic and thermal properties of the copper thallium chalcogenides (CuTlX2: X=S, Se, Te) in the body centered tetragonal (BCT) phase have been studied using the accurate full potential linearized augmented plane wave (FP-LAPW) method. We have reported the electronic and optical properties with the recently developed density functional theory of Tran and Blaha and this theory are used along with the Wu-Cohen generalized gradient approximation (WC-GGA) for the exchange-correlation potential. Furthermore, optical features such as dielectric functions, refractive indices, extinction coefficient, optical reflectivity, absorption coefficients, optical conductivities, were calculated for photon energies up to 40 eV. The elastic constants at equilibrium in BCT structure are also determined. The thermodynamical properties such as thermal expansion, heat capacity, Debye temperature, entropy, Gruneisen parameter and bulk modulus were calculated employing the quasi-harmonic Debye model at different temperatures and pressures and the silent results were interpreted. Hardness of the materials was calculated for the first time at different temperatures and pressures. [ABSTRACT FROM AUTHOR]
- Published
- 2019
3. Mechanism of Charge Transport in Cobalt and Iron Phthalocyanine Thin Films Grown by Molecular Beam Epitaxy.
- Author
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Kumar, Arvind, Samanta, Soumen, Singh, Ajay, Debnath, A. K., Aswal, D. K., and Gupta, S. K.
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CHARGE transfer , *PHTHALOCYANINES , *ORGANOMETALLIC compounds , *THIN films , *MOLECULAR beam epitaxy , *CRYSTAL growth , *GRAZING incidence , *X-ray diffraction , *METALLIC composites , *METAL-insulator transitions - Abstract
Cobalt phthalocyanine (CoPc), iron phthalocyanine (FePc) and their composite (CoPc-FePc) films have been grown by molecular beam epitaxy (MBE). Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscope (SEM) studies showed that composite films has better structural ordering compared to individual CoPc and FePc films. The temperature dependence of resistivity (in the temperature range 25 K- 100 K) showed that composite films are metallic, while individual CoPc and FePc films are in the critical regime of metal-to-insulator (M-I) transition The composite films show very high mobility of 110 cm2 V-1 s-1 at room temperature i.e. nearly two order of magnitude higher compared to pure CoPc and FePc films. [ABSTRACT FROM AUTHOR]
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- 2011
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4. Study of thermal stability of Cu2Se thermoelectric material.
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Bohra, Anil, Bhatt, Ranu, Bhattacharya, Shovit, Basu, Ranita, Ahmad, Sajid, Singh, Ajay, Aswal, D. K., and Gupta, S. K.
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COPPER compounds , *THERMOELECTRIC materials , *X-ray diffraction , *THERMAL stability , *SEEBECK coefficient , *THERMOELECTRIC generators , *TEMPERATURE effect - Abstract
Sustainability of thermoelectric parameter in operating temperature range is a key consideration factor for fabricating thermoelectric generator or cooler. In present work, we have studied the stability of thermoelectric parameter of Cu2Se within the temperature range of 50-800°C. Temperature dependent Seebeck coefficients and electrical resistivity measurement are performed under three continuous thermal cycles. X-ray diffraction pattern shows the presence of mixed cubic-monoclinic Cu2Se phase in bare pellet which transforms to pure α-Cu2Se phase with repeating thermal cycle. Significant enhancement in Seebeck coefficient and electrical resistivity is observed which may be attributed to (i) Se loss observed in EDS and (ii) the phase transformation from mixed cubic-monoclinic structure to pure monoclinic α-Cu2Se phase. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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5. Study of H2S Sensitivity of Pure and Cu Doped SnO2 Single Nanowire Sensors.
- Author
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Kumar, Vivek, Sen, Shashwati, Muthe, K. P., Gaur, N. K., Singh, R. K., Dhabekar, Bhushan, and Gupta, S. K.
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NANOWIRES , *SOLID state electronics , *X-ray diffraction , *ARGON , *PHOTOLUMINESCENCE - Abstract
Pure and Cu doped SnO2 nanowires and nanobelts were grown in a tubular furnace under argon atmosphere at ambient pressure. X-ray diffraction showed that Cu gets incorporated into the SnO2 lattice. Isolated single nanowire sensors have been fabricated for detection of H2S gas at room temperature. Cu doping was found to reduce the sensitivity of these sensors in contrast to results reported for Cu doped SnO2 thin films. Photoluminescence studies indicate that the reduction is sensitivity may be due to reduced defect density. [ABSTRACT FROM AUTHOR]
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- 2009
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6. Facile synthesis of additive-assisted nano goethite powder and its application for fluoride remediation.
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Mohapatra, Mamata, Rout, K., Singh, P., Anand, S., Mishra, B. K., and Gupta, S. K.
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HYDRAZINE , *X-ray diffraction , *NANOPARTICLES , *ANIONS , *FLUORIDES - Abstract
The present article describes a novel synthesis route for nano-sized goethite (α-FeOOH) using hydrazine sulphate as an additive. The X-ray diffraction (XRD) peaks of synthesized powder matched well with those of α-FeOOH. Transmission electron microscopy (TEM) showed the particles of irregular shape in the range of 1–10 nm. Batch adsorption experiments for fluoride uptake were performed to study the influence of various experimental parameters such as contact time (10 min to 7 h), initial fluoride concentration (10–150 mg L−1), pH (2–11.6) and the presence of competing anions. The time data fitted well to pseudo-second-order kinetic model. The fluoride removal passed through broad maxima in pH ranges of 6–8. High adsorption capacity of 59 mg g−1 goethite was obtained. The isothermic data fitted well to Freundlich model. The presence of other ions namely chloride and sulphate adversely affected fluoride removal. Fluoride from contaminated water sample could be successfully brought down from 10.25 to 0.5 mg L−1. [ABSTRACT FROM AUTHOR]
- Published
- 2010
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7. Preparation And Characterization Of CsI:Tl Thick Films On Silica Glass Substrate.
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Shinde, Seema, Singh, S., Sen, S., Chennakesavulu, Gadkari, S. C., and Gupta, S. K.
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FUSED silica , *CESIUM iodide , *THICK films , *DOPING agents (Chemistry) , *EVAPORATION (Chemistry) , *TEMPERATURE effect , *RADIOLUMINESCENCE - Abstract
The films of Tl doped CsI (CsI:Tl) of varying thicknesses ranging from 10 μm - 1.5 mm have been grown on silica glass substrates by thermal evaporation technique. Effects of substrate temperature, substrate surface texture and film thickness on the film structure and morphology were studied. The film shows a preferred orientation along the <200> direction having columns of diameter 1-6 μm depending on the film thickness. In the films of lower thicknesses a number of cracks were observed that vanishes with increase in the film thickness and shows a continuous and crack-free morphology beyond 500 μm thickness. Radio-luminescence of the films was also recorded using a white x-ray source (Cu target) and a solid state spectrometer in 300-800 nm wavelength range. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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8. Chemiresistive gas sensing characteristics of cobalt oxide thin films.
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Balouria, Vishal, Kumar, Arvind, Samanta, S., Bhattacharya, S., Singh, A., Debnath, A. K., Mahajan, Aman, Bedi, R. K., Aswal, D. K., and Gupta, S. K.
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GAS detectors , *COBALT oxides , *THIN films , *ELECTRON beams , *SUBSTRATES (Materials science) , *X-ray diffraction , *SCANNING electron microscopy , *CHEMICAL synthesis - Abstract
We report synthesis of 100 nm thick cobalt oxide films - prepared by electron-beam evaporation of Co onto quartz (Q- films) and c-plane sapphire substrate (S- films) followed by oxygen annealing. Films have been characterized for their structure and morphology by using X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The prepared films have been investigated for their chemiresistive gas sensing characteristics for a host of test gases (CH4, CO, NO2, Cl2, NH3 and H2S) as a function of operating temperature (between 50 and 350°C) and gas concentration (3-30 ppm). We demonstrate that both Q and S-films are highly selective to H2S at an operating temperature of 250°C. However it has been observed that films prepared on sapphire show much less base resistance drift as compared to the films on quartz substrate. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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9. Formation of PdS and PdS2 phases by sulfurization of sputtered Pd thin films.
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Bhatt, Ranu, Bhattacharya, Shovit, Singh, Ajay, Basu, Ranita, Aswal, D. K., and Gupta, S. K.
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SULFUR , *THIN films , *PALLADIUM compounds , *MAGNETRON sputtering , *X-ray diffraction , *TEMPERATURE effect , *MICROSTRUCTURE - Abstract
Thin films of palladium sulfide were prepared by sulfurisation of sputtered metallic Pd films using specially designed sulfurisation set-up. The formation of PdS has been confirmed by XRD (x-ray diffraction) technique. The XRD results reveal the formation of PdS and PdS2 phases at sulfurisation temperature of 6000C and 7000C, respectively. The effect of sulfurization temperature on the microstructural properties of Pd-S thin films is investigated using SEM (scanning electron microscopy). It has been observed that the surface of the films get densified at 600°C whereas at higher temperature of 700°C island growth has been observed. The band gap of Pd-S films determined using UV-visible absorption shows direct band gap transition and band gap value ∼1.3 eV, suggesting semiconducting nature of Pd-S thin films. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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10. Thermoelectric property of Cu2ZnSnSe4 and Cu2Zn0.5Cd0.5SnSe4.
- Author
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Basu, Ranita, Patel, Miral, Bhattacharya, S., Bhatt, Ranu, Roy, Mainak, Singh, Ajay, Aswal, D. K., and Gupta, S. K.
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THERMOELECTRIC effects , *ZINC compounds , *X-ray diffraction , *SOLID state chemistry , *SUBSTITUTION reactions , *COMPARATIVE studies , *TEMPERATURE effect - Abstract
We have studied the difference in the thermoelectric properties of Cu2ZnSnSe4 and Cu2Zn0.5Cd0.5SnSe4. The samples were prepared using solid state synthesis method. The x-ray diffraction analysis revealed the formation of the phases. The temperature dependence of thermopower, electrical resistivity and power factor were measured for both Cu2ZnSnSe4 and Cu2Zn0.5Cd0.5SnSe4. The difference in the properties can be attributed to the fact that substitution of Zn by Cd causes an alteration in the electrical insulating path by the larger Cd atom. The electrical resistivity increases by several orders of magnitude in Cu2Zn0.5Cd0.5SnSe4. Since the Seebeck coefficient is high for Cu2ZnSnSe4, five times increase in power factor was seen in comparison to Cu2Zn0.5Cd0.5SnSe4 [ABSTRACT FROM AUTHOR]
- Published
- 2013
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11. Dramatic thermal conductivity reduction in PbSe0.5Te0.5.
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Basu, Ranita, Bhattacharya, S., Bhatt, Ranu, Singh, Ajay, Aswal, D. K., and Gupta, S. K.
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THERMAL conductivity , *LEAD compounds , *X-ray diffraction , *CRYSTAL lattices , *TEMPERATURE effect , *PHONONS - Abstract
We have studied the effect of thermal conductivity of PbSe and for the composition PbSe1-xTex (x = 0.0, 0.2, 0.50, 0.75, 0.9 and 1.0). The samples were prepared using melting and rocking method. The x-ray diffraction analysis suggested that the lattice parameter increases linearly with dopant concentration (x). The temperature dependence of thermal conductivity measured for samples having different x revealed unusual decrease in thermal conductivity for the composition x=0.5 e.g. for PbSe and PbTe the room temperature thermal conductivity were 3.2W/m-K and 3.0 W/m-K whereas for PbSe0.5Te0.5 it was 0.8W/m-K. The observation can be attributed to the fact that PbSe1-xTex is a typical solid solution and the high level of doping increases the density of defects. This defect scatters the high frequency phonons and thus decreases the thermal conductivity. [ABSTRACT FROM AUTHOR]
- Published
- 2013
- Full Text
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12. Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dots.
- Author
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Sreekumar, R, Mandal, A, Chakrabarti, S, and Gupta, S K
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ION implantation , *MOLECULAR self-assembly , *QUANTUM dots , *INDIUM arsenide , *GALLIUM arsenide , *PHOTOLUMINESCENCE , *WAVELENGTHS , *X-ray diffraction - Abstract
We report the degradation in photoluminescence efficiency of GaAs/(InAs/GaAs) quantum dot (QD) heterostructures subjected to 20 to 50 keV sulfur implantation. Sulfur ions of fluence ranging from 2.5 x 1013 to 2 x 1015 ions cm[?]2 were used for implantation. Implantation resulted in shift in photoluminescence emission towards lower wavelength and degradation in photoluminescence efficiency. X-ray diffraction analysis revealed reduction in crystalline quality of GaAs cap layer and an amorphous layer was accomplished with 50 keV sulfur implantation, with a fluence of 2.5 x 1014 ions cm[?]2. The amorphous layer was formed due to the overlap of defect clusters created during implantation, as a result of exceeding the critical nuclear energy density deposited in the GaAs system. Cross-sectional transmission electron microscopy revealed damage zones in the cap layer and deformation of QDs upon 50 keV sulfur implantation. Creation of damaged/amorphous GaAs layer probably increased the compressive strain in InAs/GaAs QDs, which resulted in change in energy gap of QDs and blue shift in photoluminescence emission. Implantation resulted in decrease in activation energy from 111 meV (20 keV) to 10 meV (50 keV S). Increase in implantation energy created defects/damage profile at a depth in the vicinity of the QDs. Non-radiative recombination of carriers through these defects might be the possible reason for the degradation of photoluminescence efficiency. [ABSTRACT FROM AUTHOR]
- Published
- 2010
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