1. The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures.
- Author
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Oh, Young-Taek, Roh, Il-Pyo, Kino, Hisashi, Tanaka, Tetsu, and Song, Yun-Heub
- Subjects
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MECHANICAL stress analysis , *METALLIC oxides , *RESIDUAL stresses , *FLASH memory testing , *SEMICONDUCTORS - Abstract
We investigated the impact of mechanical stress on the cell characteristics of metal–oxide–nitride–oxide–semiconductor (MONOS) structures through experimental observations based on a curvature method for residual stress extraction and an analysis of the interface state. Residual stress induced on a substrate was observed to change from compressive to tensile depending on the tungsten process conditions; a high interface trap density was extracted under a high compressive stress environment based on a silicon bonding model. These interface trap densities were suggested as being attributable to a critical factor weakening the leakage characteristics of the MONOS structure. Besides, interface traps interrupted electron tunneling due to unintended charge trapping at the interface, which deteriorated memory characteristics indicated by a reduction in trap density. These results experimentally supported the effects of mechanical stress on device characteristics and reliability, which could be a straightforward way toward understanding the impact of stress for improved future flash memory applications. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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