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We report a study of the infrared response by localized surface plasmon resonance (LSPR) modes in gold micro- and nanoantenna arrays with various morphologies and surface-enhanced infrared absorption (SEIRA) by optical phonons of semiconductor nanocrystals (NCs) deposited on the arrays. The arrays of nano- and microantennas fabricated with nano- and photolithography reveal infrared-active LSPR modes of energy ranging from the mid to far-infrared that allow the IR response from very low concentrations of organic and inorganic materials deposited onto the arrays to be analyzed. The Langmuir–Blodgett technology was used for homogeneous deposition of CdSe, CdS, and PbS NC monolayers on the antenna arrays. The structural parameters of the arrays were confirmed by scanning electron microscopy. 3D full-wave electromagnetic simulations of the electromagnetic field distribution around the micro- and nanoantennas were employed to realize the maximal SEIRA enhancement for structural parameters of the arrays whereby the LSPR and the NC optical phonon energies coincide. The SEIRA experiments quantitatively confirmed the computational results. The maximum SEIRA enhancement was observed for linear nanoantennas with optimized structural parameters determined from the electromagnetic simulations. The frequency position of the feature’s absorption seen in the SEIRA response evidences that the NC surface and transverse optical phonons are activated in the infrared spectra.

The study of infrared absorption by linear gold nanoantennas fabricated on a Si surface with underlying SiO2 layers of various thicknesses allowed the penetration depth of localized surface plasmons into SiO2 to be determined. The value of the penetration depth derived experimentally (20 ± 10 nm) corresponds to that obtained from electromagnetic simulations (12.9–30.0 nm). Coupling between plasmonic excitations of gold nanoantennas and optical phonons in SiO2 leads to the appearance of new plasmon–phonon modes observed in the infrared transmission spectra the frequencies of which are well predicted by the simulations.

We present the results of an investigation of surface-enhanced Raman scattering (SERS) by optical phonons in colloidal CdSe nanocrystals (NCs) homogeneously deposited on both arrays of Au nanoclusters and Au dimers using the Langmuir–Blodgett technique. The coverage of the deposited NCs was less than one monolayer, as determined by transmission and scanning electron microscopy. SERS by optical phonons in CdSe nanocrystals showed a significant enhancement that depends resonantly on the Au nanocluster and dimer size, and thus on the localized surface plasmon resonance (LSPR) energy. The deposition of CdSe nanocrystals on the Au dimer nanocluster arrays enabled us to study the polarization dependence of SERS. The maximal SERS signal was observed for light polarization parallel to the dimer axis. The polarization ratio of the SERS signal parallel and perpendicular to the dimer axis was 20. The SERS signal intensity was also investigated as a function of the distance between nanoclusters in a dimer. Here the maximal SERS enhancement was observed for the minimal distance studied (about 10 nm), confirming the formation of SERS “hot spots”.

We present the results of a Raman study of optical phonons in CuS nanocrystals (NCs) with a low areal density fabricated through the Langmuir–Blodgett technology on nanopatterned Au nanocluster arrays using a combination of surface- and interference-enhanced Raman scattering (SERS and IERS, respectively). Micro-Raman spectra of one monolayer of CuS NCs deposited on a bare Si substrate reveal only features corresponding to crystalline Si. However, a new relatively strong peak occurs in the Raman spectrum of CuS NCs on Au nanocluster arrays at 474 cm−1. This feature is related to the optical phonon mode in CuS NCs and manifests the SERS effect. For CuS NCs deposited on a SiO2 layer this phonon mode is also observed due to the IERS effect. Its intensity changes periodically with increasing SiO2 layer thickness for different laser excitation lines and is enhanced by a factor of about 30. CuS NCs formed on Au nanocluster arrays fabricated on IERS substrates combine the advantages of SERS and IERS and demonstrate stronger SERS enhancement allowing for the observation of Raman signals from CuS NCs with an ultra-low areal density.

1Water and Steam Chemistry Division, Bhabha Atomic Research Centre Facilities, Kalpakkam 603102, India 2 Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India 3 Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia 4Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan 5 Jawaharlal Nehru Centre for Advanced Scientific Research, International Centre for Materials Science and Chemistry, Bangalore 560064, India

Resonant Raman scattering by optical phonon modes as well as their overtones was investigated in ZnS and ZnO quantum dots grown by the Langmuir–Blodgett technique. The in situ formation of ZnS/ZnO core/shell quantum dots was monitored by Raman spectroscopy during laser illumination.

Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs) grown at various temperatures by molecular beam epitaxy were investigated using resonant Raman spectroscopy and capacitance measurements. The occurrence of quantum confinement effects was confirmed by both techniques. For the structures grown at low temperatures (300−400°C), the SAQDs optical phonon wavenumbers decrease as the Raman excitation energy is increased; this is an evidence of the scattering sensitivity to the size of the SAQDs and to the inhomogeneity in their sizes. However, the opposite behavior is observed for the SAQDs grown at higher temperatures, as a consequence of the competition between the phonon localization and internal mechanical stress effects. TheE1electronic transition of the Ge in the SAQDs was found to be shifted towards higher energies as compared to bulk Ge, due to biaxial compressive stress and to the electronic confinement effect present in the structures. The intermixing of Si atoms in the quantum dots was found to be much more significant for the sample grown at higher temperatures. The capacitance measurements, besides confirming the existence of the dots in these structures, showed that the deepest Ge layers lose their 0D signature as the growth temperature increases.