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Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its 1/2 nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to fewlayer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene. [ABSTRACT FROM AUTHOR]

Graphene’s unique optoelectronicproperties have been exploitedfor many photonic applications. Here, we demonstrate a single graphene-baseddevice that simultaneously provides efficient optical modulation andphotodetection. The graphene device is integrated on a silicon waveguideand is tunable with a graphene gate to achieve a near-infrared photodetectionresponsivity of 57 mA/W and modulation depth of 64% with GHz bandwidth.Simultaneous modulation of photocurrent and optical transmission hasbeen achieved, which may lead to unprecedented optoelectronic applications. [ABSTRACT FROM AUTHOR]

To fully utilize graphene's remarkable optical properties for optoelectronic applications, it needs to be integrated in planar photonic systems. Here, we demonstrate integration of graphene on silicon photonic circuits and precise measurement of the optical absorption coefficient in a graphene/waveguide hybrid structure. A method based on Mach-Zehnder interferometry is employed to achieve high measurement precision and consistency, yielding a maximal value of absorption coefficient of 0.2 dB/μm when graphene is located directly on top of the waveguide. The averaged results obtained from a large number of samples agree with theoretical model utilizing the universal ac conductivity in graphene. Our work provides an important guide for the design and optimization of integrated graphene optoelectronic devices. [ABSTRACT FROM AUTHOR]

Graphene is an ideal material for spintronic devices due to its low spin-orbit coupling and high mobility. One of the most important potential applications of graphene spintronics is for use in neuromorphic computing systems, where the tunable spin resistance of graphene can be used to apply analog weighting factors. A key capability needed to achieve spin-based neuromorphic computing systems is to achieve distinct regions of control, where injected and detected spin currents can be tuned independently. Here, we demonstrate the ability to achieve such independent control using a graphene spin valve geometry where the injector and detector regions are modulated by two separate bottom gate electrodes. The spin transport parameters and their dependence on each gate voltage are extracted from Hanle precession measurements. From this analysis, local spin transport parameters and their dependence on the local gate voltage are found, which provide a basis for a spatially-resolved spin resistance network that simulates the device. The data and model are used to calculate the spin currents flowing into, through, and out of the graphene channel. We show that the spin current flowing through the graphene channel can be modulated by 30% using one gate and that the spin current absorbed by the detector can be modulated by 50% using the other gate. This result demonstrates that spin currents can be controlled by locally tuning the spin resistance of graphene. The integration of chemical vapor deposition (CVD) grown graphene with local gates allows for the implementation of large-scale integrated spin-based circuits. [ABSTRACT FROM AUTHOR]