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The effect of pressure on Raman scattering (RS) in bulk H f S 2 is investigated under hydrostatic and non-hydrostatic pressure conditions. The RS line shape does not change significantly in the hydrostatic regime up to P = 9.6 GPa, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks appear in the spectrum at P = 7 GPa, which dominate the RS line shape up to P = 10.5 GPa. The change in the RS line shape manifests a pressure-induced phase transition in H f S 2. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the coexistence of two different phases over a wide pressure range. It is found that the HP-related phase is metastable and persists during the decompression cycle down to P = 1.2 GPa, while the LP-related features eventually recover at even lower pressure. The angle-resolved polarized RS performed under P = 7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A 1 g mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. The results are explained in terms of a distorted P n m a phase as a possible pressure-induced phase of H f S 2. [ABSTRACT FROM AUTHOR]

Topological semimetals represent a novel class of quantum materials displaying non‐trivial topological states that host Dirac/Weyl fermions. The intersection of Dirac/Weyl points gives rise to essential properties in a wide range of innovative transport phenomena, including extreme magnetoresistance, high mobilities, weak antilocalization, electron hydrodynamics, and various electro‐optical phenomena. In this study, the electronic, transport, phonon scattering, and interrelationships are explored in single crystals of the topological semimetal HfAs2. It reveals a weak antilocalization effect at low temperatures with high carrier density, which is attributed to perfectly compensated topological bulk and surface states. The angle‐resolved photoemission spectroscopy (ARPES) results show anisotropic Fermi surfaces and surface states indicative of the topological semimetal, further confirmed by first‐principle density functional theory (DFT) calculations. Moreover, the lattice dynamics in HfAs2 are investigated both with the Raman scattering and density functional theory. The phonon dispersion, density of states, lattice thermal conductivity, and the phonon lifetimes are computed to support the experimental findings. The softening of phonons, the broadening of Raman modes, and the reduction of phonon lifetimes with temperature suggest the enhancement of phonon anharmonicity in this new topological material, which is crucial for boosting the thermoelectric performance of topological semimetals. [ABSTRACT FROM AUTHOR]

Ternary two-dimensional (2D) transition metal chalcogenides have gained immense attention because of their ability to overcome the intrinsic limitations of their binary counterparts. Layered 2D materials are important for future electronic and photonic devices owing to their low structural symmetry and in-plane anisotropy with tunable bandgap. Herein, the electronic structure and detailed vibrational properties of bulk ZrGeTe4 layered single crystals were investigated using angle-resolved photoemission spectroscopy (ARPES) and Raman scattering (RS). The ARPES results revealed an anisotropic Fermi surface of different momentum along kx and ky from the zone center and an anisotropic band structure with varying band curvatures along the high-symmetry directions. Furthermore, the RS of ZrGeTe4 was investigated under different polarizations and varying temperatures. The polarized RS exhibited twofold and fourfold symmetry orientations in different configurations, revealing the anisotropic phonon dispersions for bulk ZrGeTe4. The observed softening of Raman modes was corroborated with the anharmonic phonon dispersion, which was further supported by our third-order force constant calculations of thermal transport using density functional theory. Low lattice thermal conductivity with increasing temperature is linked with enhanced phonon–phonon scattering, which is evident from the decreased phonon lifetime and peak linewidth. In addition to these fundamental aspects, the anisotropic nature and unique layered structure of such materials reveal their bright future for next-generation nanoelectronic applications. [ABSTRACT FROM AUTHOR]

2D Ruddlesden‐Popper metal‐halide perovskites feature particularly strong excitonic effects, making them a fascinating playground for studying exciton physics. A complete understanding of the properties of this quasi‐particle is crucial to fully exploit the tremendous potential of 2D perovskites (2DP) in light emission applications. Despite intense investigations, some of the exciton properties remain elusive to date, for example, the energy‐ordering of the exciton states within the so‐called fine structure manifold. Using optical spectroscopy, it demonstrates that in the archetypical 2DP (PEA)2PbI4, in contradiction to theoretical predictions, the energy of the bright out‐of‐plane exciton state is higher than that of two in‐plane states. Having elucidated the order of exciton fine structure, it determines the g‐factor of the dark exciton transition, together with the values of the electron and hole g‐factors in the direction parallel to the c‐axis of the crystal. In this way, it provides for the first time, a complete picture of the exciton fine structure in (PEA)2PbI4 2DP. [ABSTRACT FROM AUTHOR]

Temperature-dependent (5 K–300 K) Raman scattering study of A1g/A′1 phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe2 is reported. The temperature evolution of the modes’ intensity critically depends on the flake thickness. In particular with λ=632.8-nm light excitation, a strongly non-monotonic dependence of the A1g mode intensity is observed in 2L MoTe2. The intensity decreases with decreasing temperature down to 220 K, and the A1g mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures, and at T=5 K, it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe2 in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode (with vibrations of tellurium atoms in the central layer shifted by 180° with respect to the vibrations in outer layers) only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe2 is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed “antiresonance” is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe2.

The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS 2 encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1st and 2nd order phonon modes is unambiguously observed in a broad range of temperatures from 5 to 320 K. The spectrum includes the Raman-active modes, i.e. E 1g 2 (Γ ) and A 1g (Γ ) along with their Davydov-split counterparts, i.e. E 1u (Γ ) and B 1u (Γ ). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A 1g (Γ ) mode, which dominates the Raman scattering spectrum at T = 5 K quenches with increasing temperature. Surprisingly, at room temperature the B 1u (Γ ) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A 1g (Γ ) counterpart. [ABSTRACT FROM AUTHOR]

The dielectric environment of atomically thin monolayer (ML) of semiconducting transition metal dichalcogenides affects both the electronic bandgap and the excitonic binding energy in the ML. We investigate the effect of the environment on the in-plane magnetic field brightening of neutral and charged dark exciton emissions in the WSe2 ML. The monolayers placed in three dielectric environments are studied, in particular, the ML encapsulated in hexagonal BN (hBN) flakes, the ML deposited on a hBN layer, and the ML embedded between the hBN flake and SiO2/Si substrate. We observe that the brightening rates of the neutral and charged dark excitons depend on the dielectric environment, which may be related to the variation of the level of carrier concentration in the ML. Moreover, the surrounding media, characterized by different dielectric constants, weakly influence the relative energies of the neutral and charged dark excitons in reference to the bright ones. [ABSTRACT FROM AUTHOR]

III–VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations. [ABSTRACT FROM AUTHOR]

The spectral signatures associated with different negatively charged exciton complexes (trions) in a WS2 monolayer encapsulated in hBN are analyzed from low temperature and polarization resolved reflectance contrast (RC) and photoluminescence (PL) experiments, with an applied magnetic field. Based on results obtained from the RC experiment, we show that the valley Zeeman effect affects the optical response of both the singlet and the triplet trion species through the evolution of their energy and of their relative intensity, when applying an external magnetic field. Our analysis allows us to estimate a free electron concentration of ∼1.3 × 1011 cm−2. The observed evolutions based on PL experiments on the same sample are different and can hardly be understood within the same simple frame, highlighting the complexity of relaxation processes involved in the PL response. [ABSTRACT FROM AUTHOR]

Temperature-dependent (5 K-300 K) Raman scattering study of A1g/A'1 phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe2 is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with λ = 632.8-nm light excitation, a strongly non-monotonic dependence of the A1g mode intensity is observed in 2L MoTe2. The intensity decreases with decreasing temperature down to 220 K, and the A1g mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures, and at T = 5 K, it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe2 in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode (with vibrations of tellurium atoms in the central layer shifted by 180° with respect to the vibrations in outer layers) only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe2 is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe2. [ABSTRACT FROM AUTHOR]

The effect of pressure on Raman scattering (RS) in bulk H f S 2 is investigated under hydrostatic and non-hydrostatic pressure conditions. The RS line shape does not change significantly in the hydrostatic regime up to P = 9.6 GPa, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks appear in the spectrum at P = 7 GPa, which dominate the RS line shape up to P = 10.5 GPa. The change in the RS line shape manifests a pressure-induced phase transition in H f S 2. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the coexistence of two different phases over a wide pressure range. It is found that the HP-related phase is metastable and persists during the decompression cycle down to P = 1.2 GPa, while the LP-related features eventually recover at even lower pressure. The angle-resolved polarized RS performed under P = 7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A 1 g mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. The results are explained in terms of a distorted P n m a phase as a possible pressure-induced phase of H f S 2. [ABSTRACT FROM AUTHOR]

The aim of this work was to develop a parameterized analytical and FEM (Finite Element Method) model of a switched reluctance motor. The developed analytical model was used to assess the performance of these types of motors, and is determined to be a tool for comparing and evaluating switched reluctance motors of various designs. The aim of the work was also the systematization of knowledge related to the operation, structure and methods of determining the static electromagnetic torque generated by switched reluctance motors. The FEM model (ANSYS) was, also, made in order to verify physical phenomena occurring during operation of these motors. Four laboratory tests were executed as part of the work prototypes of switched reluctance motors built at Warsaw University of Technology. A parameterized analytical model was developed and implemented in MATLAB. The model operation tests were conducted and as a result, the characteristics describing the dependence of the electromagnetic torque as a function of the current and the position of the rotor were obtained. The model was validated by confronting the analytical calculations supported by FEM simulation results with the measurement results. The usefulness of the results obtained with the use of the procured models was assessed. [ABSTRACT FROM AUTHOR]

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature (T = 5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding emission is dominated by the disorder/impurity- and/or phonon-assisted recombination processes. Both the RC and PL spectra are found to be linearly polarized along the armchair direction. The measured RS spectra over a broad range from 5 to 300 K consist of six Raman peaks identified with the help of Density Functional Theory (DFT) calculations: A g 1 , A g 2 , A g 3 , A g 4 , B 1 g 1 , and B 1 g 2 , which polarization properties are studied under four different excitation energies. We found that the polarization orientations of the A g 2 and A g 4 modes under specific excitation energy can be useful tools to determine the GeS crystallographic directions: armchair and zigzag. [ABSTRACT FROM AUTHOR]

The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS2 monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in the redshift of the neutral exciton emission/absorption associated with both the A and B excitonic resonances. Based on this evolution, a trion complex related to the B exciton in monolayer MoS2 is unambiguously identified. A defect-related emission observed at low temperatures also disappears from the spectrum as a result of the treatment. Our observations are attributed to effective passivation of defects on the MoS2 monolayer surface. The passivation reduces the carrier density, which in turn affects the out-of-plane electric field in the sample. The observed tuning of the carrier concentration strongly influences also the Raman scattering in the MoS2 monolayer. An enhancement of Raman scattering at resonant excitation in the vicinity of the A neutral exciton is clearly seen for both the out-of-plane A′1 and in-plane E′ modes. On the contrary, when the excitation is in resonance with a corresponding trion, the Raman scattering features become hardly visible. These results confirm the role of the excitonic charge state plays in the resonance effect of the excitation energy on the Raman scattering in transition metal dichalcogenides. [ABSTRACT FROM AUTHOR]

An introduction is presented in which the editor discusses various reports within the issue on topics including electron technology, semiconductor physics, and nanostructures.

The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS 2 encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1st and 2nd order phonon modes is unambiguously observed in a broad range of temperatures from 5 to 320 K. The spectrum includes the Raman-active modes, i.e. E 1g 2 (Γ ) and A 1g (Γ ) along with their Davydov-split counterparts, i.e. E 1u (Γ ) and B 1u (Γ ). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A 1g (Γ ) mode, which dominates the Raman scattering spectrum at T = 5 K quenches with increasing temperature. Surprisingly, at room temperature the B 1u (Γ ) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A 1g (Γ ) counterpart. [ABSTRACT FROM AUTHOR]

Heterostructures (HSs) formed by the transition-metal dichalcogenide materials have shown great promise in next-generation (opto)electronic applications. An artificially twisted HS allows us to manipulate the optical and electronic properties. In this work, we introduce the understanding of the energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe 2 ) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle (∼57°) by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameter mismatch and indirect/direct (CVD/Exf.) bandgap nature. These effectively weaken the interlayer charge transfer and allow the ET to control the carrier recombination channels. Our experimental and theoretical results explain a massive HS photoluminescence enhancement due to an efficient ET process. This work shows that the electronically decoupled MoSe 2 homobilayer is coupled by the ET process, mimicking a "true" heterobilayer nature.

High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenides (TMDs) make them ideal candidates for optoelectronic device applications. Competing interlayer charge transfer (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe 2 -to-MoS 2 with an interlayer hexagonal boron nitride (hBN), due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS 2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS 2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.

Mechanical deformations and ensuing strain are routinely exploited to tune the band gap energy and to enhance the functionalities of two-dimensional crystals. In this Letter, we show that strain leads also to a strong modification of the exciton magnetic moment in WS_{2} monolayers. Zeeman-splitting measurements under magnetic fields up to 28.5 T were performed on single, one-layer-thick WS_{2} microbubbles. The strain of the bubbles causes a hybridization of k-space direct and indirect excitons resulting in a sizable decrease in the modulus of the g factor of the ground-state exciton. These findings indicate that strain may have major effects on the way the valley number of excitons can be used to process binary information in two-dimensional crystals.

Atomically thin materials, like semiconducting transition metal dichalcogenides, are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. In this work, high-quality van der Waals heterostructures assembled from hBN-encapsulated monolayer MoS 2 are studied with the aid of photoluminescence, photoluminescence excitation, and reflectance contrast experiments. We demonstrate that carrier concentration in MoS 2 monolayers, arising from charge transfer from impurities in the substrate, can be significantly tuned within one order of magnitude by the modification of the bottom hBN flake thickness. The studied structures, characterized by spectral lines with linewidths approaching the narrow homogeneously broadened limit enabled observations of subtle optical and spin-valley properties of excitonic complexes. Our results allowed us to resolve three optically-active negatively charged excitons in MoS 2 monolayers, which are assigned to the intravalley singlet, intervalley singlet, and intervalley triplet states.

We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of n-doped WS 2 monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically inactive complexes. The semidark trions and negative biexcitons are distinguished. On the basis of their experimentally extracted and theoretically calculated g -factors, we identify three distinct families of emissions due to exciton complexes in WS 2 : bright, intravalley, and intervalley dark. The g -factors of the spin-split subbands in both the conduction and valence bands are also determined.