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Low‐temperature‐grown GaAs (LT‐GaAs)‐based Fabry–Pérot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub‐sampling of continuous waves at frequencies up to 300 GHz is presented. The duty‐cycle‐limited conversion losses measured up to 67 GHz show that this GaAs‐based photoconductor behaves as a nearly perfect photoswitch controlled by a 1550 nm pulsed laser. [ABSTRACT FROM AUTHOR]

Dielectric waveguides are capable of confining and guiding terahertz waves along sub-wavelength sized structures. A small feature size allows for a denser integration of different photonic components such as modulators, beam-splitters, wavelength (de)multiplexers and more. The integration of components on a small scale requires bending of the waveguides. In this paper we demonstrate a very short silicon 90°-bend, based on total internal reflection on an elliptically curved outer facet and a rounding of the inner corner joining two waveguides, with an average loss of 0.14 dB per bend in the 600-750 GHz range.

Waveguide based optical combiners for augmented reality (AR) glasses are integrating several surface relief gratings (SRG) whose pitch sizes can be as small as 200 nm for the blue wavelength. All SRG components exploit the first diffraction order to couple in and out or to deviate the light. We present SRG using higher diffraction orders featuring over-wavelength pitch sizes. Our gratings use the edge wave (EW) diffraction phenomenon to steer light in the preferred far field direction.