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Abstract Hierarchically porous materials containing sub-nm ultramicropores with molecular sieving abilities and microcavities with high gas diffusivity may realize energy-efficient membranes for gas separations. However, rationally designing and constructing such pores into large-area membranes enabling efficient H2 separations remains challenging. Here, we report the synthesis and utilization of hybrid carbon molecular sieve membranes with well-controlled nano- and micro-pores and single zinc atoms and clusters well-dispersed inside the nanopores via the carbonization of supramolecular mixed matrix materials containing amorphous and crystalline zeolitic imidazolate frameworks. Carbonization temperature is used to fine-tune pore sizes, achieving ultrahigh selectivity for H2/CO2 (130), H2/CH4 (2900), H2/N2 (880), and H2/C2H6 (7900) with stability against water vapor and physical aging during a continuous 120-h test.

Abstract Solid‐state metal dealloying (SSMD) is a promising method for fabricating nanoscale metallic composites and nanoporous metals across a range of materials. Thin‐film SSMD is particularly attractive due to its ability to create fine features via solid‐state interfacial reactions within a thin‐film geometry, which can be integrated into devices for various applications. This work examines a new dealloying couple, namely the Nb–Al alloy with the dealloying agent Sc, as previously predicted in the machine‐learning (ML) models. Prior ML predictions aimed to guide the design of nanoarchitectured materials through dealloying, relying on intuition‐driven discovery within a large parameter space. However, this work reveals that at the nanoscale, the involvement of oxygen in thin film processing may instead drive the dealloying process, resulting in the formation of bicontinuous nanostructures similar to those formed by metal‐agent dealloying. The phase evolution, as well as chemical and morphological changes, are closely analyzed using a combination of X‐ray absorption spectroscopy, diffraction, and scanning transmission electron microscopy to understand the mechanisms behind nanostructure formation. The findings suggest a potential pathway for utilizing oxygen to drive the formation of bicontinuous metal–metal oxide nanocomposites, paving the way for further development of functional nanoporous materials in diverse fields.

Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InOx), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm−2 and 300 µC cm−2, respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InOx hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning.

Self-assembly of block-copolymers yields nanoscale structures in a facile way, but the diversity of structures is limited. Here, the authors demonstrate how block copolymer layering can be used to access new non-equilibrium morphologies.

The synthesis of functional graphene nanostructures on Ge(001) provides an attractive route toward integrating graphene-based electronic devices onto complementary metal oxide semiconductor-compatible platforms. In this study, we leverage the phenomenon of the anisotropic growth of graphene nanoribbons from rationally placed graphene nanoseeds and their rotational self-alignment during chemical vapor deposition to synthesize mesoscale graphene nanomeshes over areas spanning several hundred square micrometers. Lithographically patterned nanoseeds are defined on a Ge(001) surface at pitches ranging from 50 to 100 nm, which serve as starting sites for subsequent nanoribbon growth. Rotational self-alignment of the nanoseeds followed by anisotropic growth kinetics causes the resulting nanoribbons to be oriented along each of the equivalent, orthogonal Ge⟨110⟩ directions with equal probability. As the nanoribbons grow, they fuse, creating a continuous nanomesh. In contrast to nanomesh synthesis via top-down approaches, this technique yields nanomeshes with atomically faceted edges and covalently bonded junctions, which are important for maximizing charge transport properties. Additionally, we simulate the electrical characteristics of nanomeshes synthesized from different initial nanoseed-sizes, size-polydispersities, pitches, and device channel lengths to identify a parameter-space for acceptable on/off ratios and on-conductance in semiconductor electronics. The simulations show that decreasing seed diameter and pitch are critical to increasing nanomesh on/off ratio and on-conductance, respectively. With further refinements in lithography, nanomeshes obtained via seeded synthesis and anisotropic growth are likely to have superior electronic properties with tremendous potential in a multitude of applications, such as radio frequency communications, sensing, thin-film electronics, and plasmonics.

Modulus of resilience, the maximum strain energy density that can be stored in an elastically deformed solid, is an important mechanical property for developing artificial muscles in robotics, soft electronics panels, and micro-/nano-electromechanical actuators. In this study, core–shell SU-8 nanocomposites were fabricated via vapor-phase infiltration of nanoscale amorphous aluminum oxides into SU-8 nanopillars and performed transmission electron microscopy, nanomechanical testing, analytical modeling, and atomistic simulations to gain a fundamental insight into the ultrahigh modulus of resilience much higher than that of most high-strength materials. This study shows that the ultrahigh modulus of resilience results from: the low aspect ratio of amorphous aluminum oxide nano-particulates; the particulate size thicker than the free volume size; and the thin aluminum oxide interconnecting links within nano-particulates. These unique microstructural features produce the unusual combination of low specific Young’s modulus (E), 4 MPa/(kg/m3), and high specific yield strength (σy), 0.2 MPa/(kg/m3), leading to the specific modulus of resilience, 5.21 ± 0.39 kJ/kg (σy2/(2E)) about ten times higher than materials with the similar yield strength. This study demonstrates that vapor-phase infiltration is an excellent fabrication method to produce a polymer nanocomposite that can absorb and release a large amount of elastic strain energy.

Solar sailing enables efficient propellant-free attitude adjustment and orbital maneuvers of solar sail spacecraft with high area-to-mass ratios. However, the heavy supporting mass for large solar sails inevitably leads to low area-to-mass ratios. Inspired by chip-scale satellites, a chip-scale solar sail system named ChipSail, consisting of microrobotic solar sails and a chip-scale satellite, was proposed in this work. The structural design and reconfigurable mechanisms of an electrothermally driven microrobotic solar sail made of Al\Ni50Ti50 bilayer beams were introduced, and the theoretical model of its electro-thermo-mechanical behaviors was established. The analytical solutions to the out-of-plane deformation of the solar sail structure appeared to be in good agreement with the finite element analysis (FEA) results. A representative prototype of such solar sail structures was fabricated on silicon wafers using surface and bulk microfabrication, followed by an in-situ experiment of its reconfigurable property under controlled electrothermal actuation. The experimental results demonstrated significant electro-thermo-mechanical deformation of such microrobotic bilayer solar sails, showing great potential in the development of the ChipSail system. Analytical solutions to the electro-thermo-mechanical model, as well as the fabrication process and characterization techniques, provided a rapid performance evaluation and optimization of such microrobotic bilayer solar sails for the ChipSail.

The nanomorphologies and nanoarchitectures that can be synthesized using block copolymer (BCP) thin-film self-assembly have inspired a variety of new applications, which offer various advantages, such as, small device footprint, low operational power and enhanced device performance. Imperative for these applications, however, is the ability to transform these small polymeric patterns into useful inorganic structures. BCP-templated inorganic nanostructures have shown the potential for use as active materials in various electronic device applications, including, field-effect transistors, photodetectors, gas sensors and many more. This article reviews various strategies that have been implemented in the past decade to fabricate devices at nanoscale using block copolymer thin films.

The change in the interplanar spacing (d-spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated HfxZr1−xO2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The 10-nm-thick HZO films were fabricated by thermal and plasma-enhanced atomic layer deposition (TH- and PE-ALD) methods using H2O gas and O2 plasma as oxidants, respectively, and a post-metallization annealing (PMA) was performed at 300–400 °C. The d-spacing of the mixture of (111)-, (101)-, and (111)-planes of O, tetragonal (T), and cubic (C) phases, respectively, for the TH- and PE-ALD HZO films increased up to 2.99 Å with an increase in PMA temperature, while the d-spacing estimated by conventional x-ray diffraction was 2.92 Å regardless of the PMA temperature. The remanent polarization (2Pr = Pr+ − Pr−) of the HZO films increased as the PMA temperature increased. It is clear that the 2Pr value satisfied a linear relationship as a function of the d-spacing of O(111)/T(101)/C(111) phases. Furthermore, the wake-up effect was found to depend on the ferroelectric O phase formation. The wake-up effect was significantly reduced in both the TH- and PE-ALD HZO films after the PMA at 400 °C due to the increase in the ferroelectric O phase formation. The leakage current density (J)–electric field properties of the PE-ALD HZO film with the lowest d-spacing were divided into three steps, such as low, middle, and large J values, in the wake-up (103 cycles), pristine (100 cycle), and fatigue (107 cycles) states, respectively. Therefore, an analysis of the ferroelectric O phase is very important for understanding the ferroelectricity including endurance.

A multielectrode-based electrochemical cell allows the structural characterization of an amorphous thin-film water oxidation catalyst under various electrochemical potentials using high-energy X-ray scattering and atomic pair distribution function (PDF) techniques. A multielectrode with five electrodes provides a sufficiently low background signal to enable high-energy X-ray scattering (HEXS) measurements and amplifies the extremely low HEXS signals from samples for high-resolution PDF analysis of in situ data from thinfilm catalysts. Glassy carbon (GC) creates a relatively low intensity HEXS pattern and is used as a working electrode. Instead of a three-dimensional (3D) porous electrode architecture, the flat geometry of the electrode enables various deposition techniques to be used for the preparation of a highly conductive metal oxide layer. PDF analysis demonstrates high spatial resolution for a 230 nm thick amorphous iridium oxide film deposited on two roughened 60 μm thick GC electrodes. The PDF analysis resolves the domain size and distinguishes changes in fine structure which are directly correlated with the structure and function of the catalysts. The results bring the opportunity to analyze the structure of nanometre-scale amorphous thin-film catalysts in an electrolyte-compatible and compact 3D-printed electrochemical cell in a threeelectrode configuration. [ABSTRACT FROM AUTHOR]

We report measurements of thermal conductivity κ on individual gallium nitride nanowires (GaN NWs) with diameters ranging from 97 to 181 nm grown by thermal chemical vapor deposition. We observed unexpectedly small κ values, in the range of 13–19 W/m K at 300 K, with very weak diameter dependence. We also observe unusual power law κ∼Tn behavior with n=1.8 at low temperature. Electron-energy-loss-spectroscopy measurements indicate Si and O concentrations in the ranges of 0.1–1 and 0.01–0.1 at. %, respectively. Based on extensive numerical calculations, we conclude that both the unexpectedly low κ and the T1.8 dependence are caused by unusually large mass-difference scattering, primarily from Si impurities. Our analysis also suggests that mass-difference scattering rates are significantly enhanced by the reduced phonon group velocity in nanoscale systems. Planar defects running the length of the NW, previously characterized in detail, may also play a role in limiting the phonon mean free path. [ABSTRACT FROM AUTHOR]

A core phthalocyanine platform has allowed engineering of the solubility properties of the band gap, shifting the maximum absorption toward the end. A simple method is described for increasing the efficiency of heterojunction solar cells by using a self-organized blend of phthalocyanine chromophores prepared by solution processing.

This paper describes the design and construction of a compact, “user-friendly” polarization-modulation infrared reflection absorption spectroscopy (PM-IRRAS) instrument at the Center for Functional Nanomaterials (CFN) of Brookhaven National Laboratory, which allows studying surfaces at pressures ranging from ultra-high vacuum to 100 Torr. Surface infrared spectroscopy is ideally suited for studying these processes as the vibrational frequencies of the IR chromophores are sensitive to the nature of the bonding environment on the surface. Relying on the surface selection rules, by modulating the polarization of incident light, it is possible to separate the contributions from the isotropic gas or solution phase, from the surface bound species. A spectral frequency range between 1000 cm -1 and 4000 cm -1 can be acquired. While typical spectra with a good signal to noise ratio can be obtained at elevated pressures of gases in ~2 min at 4 cm -1 resolution, we have also acquired higher resolution spectra at 0.25 cm -1 with longer acquisition times. By way of verification, CO uptake on a heavily oxidized Ru(0001) sample was studied. As part of this test study, the presence of CO adsorbed on Ru bridge sites was confirmed, in agreement with previous ambient pressure X ray photoelectron spectroscopy studies. In terms of instrument performance, it was also determined that the gas phase contribution from CO could be completely removed even up to pressures close to 100 Torr. A second test study demonstrated the use of the technique for studying morphological properties of a spin coated polymer on a conductive surface. Note that this is a novel application of this technique. In this experiment, the polarization of incident light was modulated manually (vs. through a photoelastic modulator). It was demonstrated, in good agreement with the literature, that the polymer chains preferentially lie parallel with the surface. This PM-IRRAS system is small, modular, and easily reconfigurable. It also features a “vacuum suitcase” that allows for the integration of the PM-IRRAS system with the rest of the suite of instrumentation at our laboratory available to external users through the CFN user proposal system. [ABSTRACT FROM AUTHOR]

We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. We also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density. [ABSTRACT FROM AUTHOR]

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices. [ABSTRACT FROM AUTHOR]

Nanopatterning high aspect-ratio metal oxide structures remains challenging for conventional nanofabrication methods based on reactive ion etching due to marginal etch selectivity between target oxides and typical mask materials. Here, the authors report the application of sequential infiltration synthesis (SIS) on lithographically defined SU-8 polymer templates for patterning arbitrarily designed, high aspect-ratio metal oxide nanostructures with sub-50 nm linewidths, smooth vertical profiles, and three-dimensional (3D) morphologies difficult to achieve by the conventional fabrication methods. As examples, various AlOx nanostructures with ∼40 nm linewidths and up to 16 aspect ratios were demonstrated, along with TiOx in-plane nanowire arrays of controlled positional registrations. Detailed scanning and transmission electron microscopy studies revealed nanocrystalline and amorphous internal structures of respective AlOx and TiOx, as well as the swelling and contraction behaviors of polymer templates during the SIS process, which allowed the facile fabrication of high aspect-ratio, sub-50 nm-featured oxide nanopatterns with 3D morphologies. These results confirm the potential of vapor-phase material infiltration in directly nanopatterning complexly structured metal oxides. [ABSTRACT FROM AUTHOR]

We have grown single-crystal (Ga1-xZnx)(N1-xOx) solid-solution nanowires using nanostructured ZnGa2O4 precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (∼1019 cm-3) and an electron mobility (∼1 cm2/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices’ photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga0.88Zn0.12)(N0.88O0.12) to be as much as ∼0.6 eV lower than that of GaN or ZnO. [ABSTRACT FROM AUTHOR]

Controlling the three-dimensional (3D) nanoarchitecture of inorganic materials is imperative for enabling their novel mechanical, optical, and electronic properties. Here, by exploiting DNA-programmable assembly, we establish a general approach for realizing designed 3D ordered inorganic frameworks. Through inorganic templating of DNA frameworks by liquid-and vapor-phase infiltrations, we demonstrate successful nanofabrication of diverse classes of inorganic frameworks from metal, metal oxide and semiconductor materials, as well as their combinations, including zinc, aluminum, copper, molybdenum, tungsten, indium, tin, and platinum, and composites such as aluminum-doped zinc oxide, indium tin oxide, and platinum/aluminum-doped zinc oxide. The open 3D frameworks have features on the order of nanometers with architecture prescribed by the DNA frames and self-assembled lattice. Structural and spectroscopic studies reveal the composition and organization of diverse inorganic frameworks, as well as the optoelectronic properties of selected materials. The work paves the road toward establishing a 3D nanoscale lithography. [ABSTRACT FROM AUTHOR]

We present experimental evidence of electronic and optical interlayer resonances in graphene van der Waals heterostructure interfaces. Using the spectroscopic mode of a low-energy electron microscope (LEEM), we characterized these interlayer resonant states up to 10 eV above the vacuum level. Compared with nontwisted, AB-stacked bilayer graphene (AB BLG), an ≈0.2  Å increase was found in the interlayer spacing of 30° twisted bilayer graphene (30°-tBLG). In addition, we used Raman spectroscopy to probe the inelastic light-matter interactions. A unique type of Fano resonance was found around the D and G modes of the graphene lattice vibrations. This anomalous, robust Fano resonance is a direct result of quantum confinement and the interplay between discrete phonon states and the excitonic continuum. [ABSTRACT FROM AUTHOR]