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6. Experimental study on IGBT voltage and current stresses during switching transitions.

Author

Das, Subhas Chandra, Tiwari, Arvind, Narayanan, G., and Kumar, Ajith K

Abstract

Design of reliable power converters requires thorough understanding of the characteristics of semiconductor devices over wide range of operating and environmental conditions. This paper presents experimental investigations on switching characteristics of high-power Insulated Gate Bipolar Transistor (IGBT). The focus of this paper is to study turn-on delay time, turn-off delay time, voltage (dv/dt) stress and current (di/dt) stress of IGBT modules at different dc link voltages, load currents and operating temperatures experimentally. [ABSTRACT FROM PUBLISHER]

Published
2013
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