106 results on '"Dehzangi, Arash"'
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2. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
3. Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study
4. Formation and characterization of ultrafine nanophosphors of lithium tetraborate (Li2B4O7) for personnel and medical dosimetry
5. Single step thermal treatment synthesis and characterization of lithium tetraborate nanophosphor
6. Study of the side gate junctionless transistor in accumulation region
7. Silicon racetrack resonator based on nonlinear material
8. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
9. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology
10. Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
11. A comprehensive overview on the structure and comparison of magnetic properties of nanocrystalline synthesized by a thermal treatment method
12. Ion-Implantation as Pixel Isolation for Fabrication of Planar Strain-Balanced Antimony-based Superlattice Infrared Photodetectors
13. Impact of KOH Etching on Nanostructure Fabricated by Local Anodic Oxidation Method
14. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation.
15. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
16. Students' negative emotions and their rational and irrational behaviors during COVID-19 outbreak.
17. Comprehensive Analysis of Type-II Superlattices based Infrared Heterojunction Phototransistors
18. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice.
19. FABRICATION AND SIMULATION OF P-TYPE JUNCTIONLESS SILICON NANO-WIRE TRANSISTOR ON SILICON ON INSULATOR BY AFM NANO LITHOGRAPHY
20. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation.
21. High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD.
22. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice.
23. Antimonite-based gap-engineered Type-II Superlattice materials, grown by MBE, and MOCVD, for the Third Generation of infrared imagers.
24. Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future.
25. Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition.
26. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices.
27. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition.
28. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices.
29. Thin-Film Antimonide-Based Photodetectors Integrated on Si.
30. Background-limited long wavelength infrared InAs/InAs1-xSbx type-II superlattice-based photodetectors operating at 110 K.
31. Associated Factors of Worrying About Loneliness Before Death.
32. Structure and Physical Properties of NiO/Co3O4 Nanoparticles.
33. Nanoengineered thin films of copper for the optical monitoring of urine – a comparative study of the helical and columnar nanostructures.
34. Atomic force microscope base nanolithography for reproducible micro and nanofabrication.
35. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors.
36. Planar strained layer superlattice infrared photodetector using ion implantation.
37. Numerical study of side gate junction-less transistor in on state.
38. Numerical investigation of channel width variation in junctionless transistors performance.
39. A simulation study of thickness effect in performance of double lateral gate junctionless transistors.
40. Annealing effects on structural and electrical properties of micro heater conductor element.
41. Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors.
42. Fabrication and characterization of p-type double gate and single gate junctionless silicon nanowire transistor by atomic force microscopy nanolithography.
43. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET.
44. Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope.
45. Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography.
46. Optical Properties of CdS/PVA Nanocomposite Films Synthesized using the Gamma-Irradiation-Induced Method.
47. INFLUENCE OF EXPOSURE TIME ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ZINC SULPHIDE NANOPARTICLES SYNTHESIZED BY MICROWAVE TECHNIQUE.
48. Synthesis and Characterization of Cr-Doped AL2O3 Nanoparticles Prepared Via Aqueous Combination Method.
49. Synthesis and Characterization of Al2O3:Fe Nanoparticles Prepared via Aqueous Combustion.
50. Preparation, Characterization and Thermal Degradation of Polyimide (4-APS/BTDA)/SiO2 Composite Films.
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