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Recent reports of upconversion and white light emission from graphitic particles warrant an explanation of the physics behind the process. A model is offered, wherein the upconversion is facilitated by photoinduced electronic structure modification allowing for multiphoton processes. As per the prediction of the model, it is experimentally shown that graphite upconverts infrared light centered around 1.31 μm (0.95 eV) to broadband white light centered around 0.85 μm (1.46 eV). The results suggest that upconversion from shortwave infrared (≈3 μm, 0.45 eV) to visible region may be possible. The experiments show that the population dynamics of the electronic states involved in this upconversion process occur in the timescale of milliseconds. [ABSTRACT FROM AUTHOR]

The advantages of metalenses to enable miniaturized systems have been well established, especially in the visible and infrared wavelength regimes. The ultraviolet (UV) presents a final frontier because feature size scales as the wavelength, so realizing a large size metalens with a high numerical aperture (NA) in the UV is a major challenge. Here, a single‐layer, thin‐film (450 nm) hybrid metalens with an NA of 0.9 and a diameter of 6.2 mm is presented. By combining a Fresnel lens and optimised binary gratings, the well‐known shadowing effect of Fresnel lenses at high NA is avoided while being able to realize a large area lens. It is demonstrated that the combination of high NA and large area affords efficient detection of tryptophan‐like fluorescence, which is a well‐studied proxy for water contamination with faecal coliforms. The detection of tryptophan at levels better than 1 ppb, which corresponds to the low‐risk category for drinking water according to the World Health Organization (WHO), is shown. It is also confirmed that the hybrid metalens fluorescence collection efficiency is 3.5 times higher than a high NA plano‐convex lens used in state‐of‐the‐art fluorometers, which demonstrates that the versatile metalens approach opens up new opportunities in the UV. [ABSTRACT FROM AUTHOR]

Featured Application: The CORNERSTONE silicon photonics rapid prototyping service can be used by academic and industry researchers alike. The platform targets those who require flexibility in their fabrication process flows for applications in datacoms, metrology, sensing and more. The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future. [ABSTRACT FROM AUTHOR]

The high index contrast silicon-on-insulator platform is the dominant CMOS compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-on-insulator has some drawbacks for these emerging applications, e.g., silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms. [ABSTRACT FROM PUBLISHER]

Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN) nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL) is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10-9 cm-1.sr-1, at a Stokes shift of 200 cm-1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies. [ABSTRACT FROM AUTHOR]

We theoretically explore the potential of Si3N4 on SiO2 waveguide platform toward a wideband spectroscopic detection around the optical wavelength of 2 μm. The design of Si3N4 on SiO2 waveguide architectures consisting of a Si3N4 slot waveguide for a wideband on-chip spectroscopic sensing around 2 μm, and a Si3N4 multi-mode interferometer (MMI)-based coupler for light coupling from classical strip waveguide into the identified Si3N4 slot waveguides over a wide spectral range are investigated. We found that a Si3N4 on SiO2 slot waveguide structure can be designed for using as optical interaction part over a spectral range of interest, and the MMI structure can be used to enable broadband optical coupling from a strip to the slot waveguide for wideband multi-gas on-chip spectroscopic sensing. Reasons for the operating spectral range of the system are discussed. [ABSTRACT FROM AUTHOR]

We present a compact, CMOS compatible, photonic integrated circuit (PIC) based spectrometer that combines a dispersive array element of SiO 2 -filled scattering holes within a multimode interferometer (MMI) fabricated on the silicon-on-insulator (SOI) platform. The spectrometer has a bandwidth of 67 nm, a lower bandwidth limit of 1 nm, and a peak-to-peak resolution of 3 nm for wavelengths around 1310 nm.

We demonstrate an on-chip silicon-on-insulator (SOI) device to generate a non-diffracting beam of ≈850 µm length from a diffractive axicon-like lens etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The device consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from ≈5 µm to ≈60 µm. We characterize the device's performance by coupling 1300±50 nm swept source laser in to the chip from the axicon and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.

We review an on-chip approach for spontaneous Raman spectroscopy and surface-enhanced Raman spectroscopy based on evanescent excitation of the analyte as well as evanescent collection of the Raman signal using complementary metal oxide semiconductor (CMOS)-compatible single mode waveguides. The signal is either directly collected from the analyte molecules or via plasmonic nanoantennas integrated on top of the waveguides. Flexibility in the design of the geometry of the waveguide, and/or the geometry of the antennas, enables optimization of the collection efficiency. Furthermore, the sensor can be integrated with additional functionality (sources, detectors, spectrometers) on the same chip. In this paper, the basic theoretical concepts are introduced to identify the key design parameters, and some proof-of-concept experimental results are reviewed.

We develop and experimentally verify a theoretical model for the total efficiency η0 of evanescent excitation and subsequent collection of spontaneous Raman signals by the fundamental quasi-TE and quasi-TM modes of a generic photonic channel waveguide. Single-mode silicon nitride (Si3N4) slot and strip waveguides of different dimensions are used in the experimental study. Our theoretical model is validated by the correspondence between the experimental and theoretical absolute values within the experimental errors. We extend our theoretical model to silicon-on-insulator (SOI) and titanium dioxide (TiO2) channel waveguides and study η0 as a function of index contrast, polarization of the mode and the geometry of the waveguides. We report nearly 2.5 (4 and 5) times larger η0 for the fundamental quasi-TM mode when compared to η0 for the fundamental quasi-TE mode of a typical Si3N4 (TiO2 and SOI) strip waveguide. η0 for the fundamental quasi-TE mode of a typical Si3N4, (TiO2 and SOI) slot waveguide is about 7 (22 and 90) times larger when compared to η0 for the fundamental quasi-TE mode of a strip waveguide of the similar dimensions. We attribute the observed enhancement to the higher electric field discontinuity present in high index contrast waveguides.

The generation of an octave spanning supercontinuum covering 488-978 nm (at -30  dB) is demonstrated for the first time on-chip. This result is achieved by dispersion engineering a 1-cm-long Si3N4 waveguide and pumping it with an 100-fs Ti:Sapphire laser emitting at 795 nm. This work offers a bright broadband source for biophotonic applications and frequency metrology.

In this work we investigate numerically and experimentally the resonance wavelength tuning of different nanoplasmonic antennas excited through the evanescent field of a single mode silicon nitride waveguide and study their interaction with this excitation field. Experimental interaction efficiencies up to 19% are reported and it is shown that the waveguide geometry can be tuned in order to optimize this interaction. Apart from the excitation of bright plasmon modes, an efficient coupling between the evanescent field and a dark plasmonic resonance is experimentally demonstrated and theoretically explained as a result of the propagation induced phase delay.