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We propose efficient coding schemes for two communication settings: 1) asymmetric channels and 2) channels with an informed encoder. These settings are important in non-volatile memories, as well as optical and broadcast communication. The schemes are based on non-linear polar codes, and they build on and improve recent work on these settings. In asymmetric channels, we tackle the exponential storage requirement of previously known schemes that resulted from the use of large Boolean functions. We propose an improved scheme that achieves the capacity of asymmetric channels with polynomial computational complexity and storage requirement. The proposed non-linear scheme is then generalized to the setting of channel coding with an informed encoder using a multicoding technique. We consider specific instances of the scheme for flash memories that incorporate error-correction capabilities together with rewriting. Since the considered codes are non-linear, they eliminate the requirement of previously known schemes (called polar write-once-memory codes) for shared randomness between the encoder and the decoder. Finally, we mention that the multicoding scheme is also useful for broadcast communication in Marton’s region, improving upon previous schemes for this setting. [ABSTRACT FROM PUBLISHER]

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer devices (e.g., smartphones and cameras) where the number of program-erase cycles is small. However, it is not economical for enterprise storage systems that require a large number of lifetime writes. The proposed approach in this paper for alleviating this problem consists of the efficient integration of two key ideas: 1) improving reliability and endurance by representing the information using relative values via the rank modulation scheme and 2) increasing the overall (lifetime) capacity of the flash device via rewriting codes, namely, performing multiple writes per cell before erasure. This paper presents a new coding scheme that combines rank-modulation with rewriting. The key benefits of the new scheme include: 1) the ability to store close to 2 bit per cell on each write with minimal impact on the lifetime of the memory and 2) efficient encoding and decoding algorithms that make use of capacity-achieving write-once-memory codes that were proposed recently. [ABSTRACT FROM PUBLISHER]

We consider the local rank-modulation scheme, in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank-modulation is a generalization of the rank-modulation scheme, which has been recently suggested as a way of storing information in flash memory. We study gray codes for the local rank-modulation scheme in order to simulate conventional multilevel flash cells while retaining the benefits of rank modulation. Unlike the limited scope of previous works, we consider code constructions for the entire range of parameters including the code length, sliding-window size, and overlap between adjacent windows. We show that the presented codes have asymptotically optimal rate. We also provide efficient encoding, decoding, and next-state algorithms. [ABSTRACT FROM AUTHOR]