1. InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods
- Author
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Siming Chen, Huiyun Liu, M. V. Maximov, Alexey M. Mozharov, M. M. Kulagina, Alexey E. Zhukov, Eduard Moiseev, F. I. Zubov, Anna S. Dragunova, N. V. Kryzhanovskaya, Mingchu Tang, and Svetlana A. Kadinskaya
- Subjects
microdisk laser ,Materials science ,Silicon ,chemistry.chemical_element ,Physics::Optics ,quantum dots ,02 engineering and technology ,Substrate (electronics) ,Epitaxy ,lcsh:Technology ,Article ,Condensed Matter::Materials Science ,020210 optoelectronics & photonics ,0202 electrical engineering, electronic engineering, information engineering ,General Materials Science ,Wafer ,Physics::Atomic Physics ,semiconductor laser ,lcsh:Microscopy ,lcsh:QC120-168.85 ,lcsh:QH201-278.5 ,business.industry ,Condensed Matter::Other ,lcsh:T ,Heterojunction ,021001 nanoscience & nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,III–V on Si ,chemistry ,Quantum dot laser ,Quantum dot ,lcsh:TA1-2040 ,Optoelectronics ,lcsh:Descriptive and experimental mechanics ,Dry etching ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,0210 nano-technology ,business ,lcsh:Engineering (General). Civil engineering (General) ,lcsh:TK1-9971 - Abstract
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15&ndash, 31 µ, m). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µ, m diameter microdisks operating uncooled. In microlasers with a diameter of 15 µ, m, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.
- Published
- 2020