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Abstract Transition-metal doped topological insulators have been widely explored since the observation of quantum anomalous Hall effect (QAHE). Subsequently, the magnetic (Pb,Sn)(Te,Se) was predicted to possibly possess a high-temperature QAHE state. However, the fundamental understanding of Cr-doping-induced ferromagnetism in this system remains unclear. Here, we report the stable ferromagnetism in the high-crystalline Cr-doped SnTe films. Upon Cr doping, the magnetoconductance unveils a crossover from weak antilocalization to weak localization. Further increasing the Cr concentration to Cr0.17Sn0.83Te introduces a strong ferromagnetism with a Curie temperature of ~140 K. We detected a sizable spin moment m s = 2.28 ± 0.23 μ B/Cr and a suppressed orbital moment m l = 0.02 μ B/Cr. Cr dopants prefer to substitute the Sn sites and behave as divalent cations, as indicated by the experimental results and density function theory calculations. The controllable growth of magnetic SnTe thin films provides enlightenment towards the high-temperature QAHE in magnetic TCIs for the desired dissipationless transport in electronics.

Abstract The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials.

Abstract Electromagnetic (EM) wave pollution is harmful to human health and environment, thus it is absolutely important to develop new electromagnetic wave absorbing materials. MAX phases have been attracted more attention as a potential candidate for electromagnetic wave absorbing materials due to their high conductivity and nanolaminated structure. Herein, two new magnetic MAX phases with multiprincipal elements ((Ti1/3Nb1/3Ta1/3)2FeC and (Ti0.2V0.2Nb0.2Ta0.2Zr0.2)2FeC) in which Fe atoms replace Al atoms in the A sites are successfully synthesized by an isomorphous replacement reaction of multiprincipal (Ti1/3Nb1/3Ta1/3)2AlC and (Ti0.2V0.2Nb0.2Ta0.2Zr0.2)2AlC MAX phases with Lewis acid salt (FeCl2). (Ti1/3Nb1/3Ta1/3)2FeC and (Ti0.2V0.2Nb0.2Ta0.2Zr0.2)2FeC exhibit ferromagnetic behavior, and the Curie temperature (Tc) are 302 and 235 K, respectively. The dual electromagnetic absorption mechanisms that include dielectric and magnetic loss, which is realized in these multiprincipal MAX phases. The minimum reflection loss (RL) of (Ti1/3Nb1/3Ta1/3)2FeC is −44.4 dB at 6.56 GHz with 3 mm thickness, and the effective bandwidth is 2.48 GHz. Additionally, the electromagnetic wave absorption properties of the magnetic MAX phases indicate that magnetic loss also plays an important role besides dielectric loss. This work shows a promising composition‐design strategy to develop MAX phases with good EM wave absorption performance via simultaneously regulating dielectric and magnetic loss together.

Many topological semimetals are excellent thermoelectric materials, but previous studies were limited to steady-state properties. Here, the authors observe a transient thermoelectric response in Cd3As2 by detecting the resulting THz emission, with an enhanced response when a small magnetic field is applied.

The superconductor-ferromagnet interface provides a unique opportunity to study the interplay between superconductivity and ferromagnetism. Here, the authors build a van der Waals ferromagnetic Josephson junction evidencing a strong 0 and π phase Josephson coupling.

Here, arrays of 2H-TaSe2 nanoribbons are shown to exhibit a broadband plasmonic response that can be tuned from THz to telecom range. These localized plasmons can also couple to charge density wave excitations, offering insights on the physics of plasmonic excitations in 2D correlated materials.

Here, the authors observe reversible nonreciprocal charge transport in two-dimensional NbSe2, and demonstrate antenna devices exhibiting strong sensitivity to driving AC electromagnetic waves in the superconducting regime.

The mechanism and scaling of high harmonic generation in solids is a highly compelling ongoing area of research. Here the authors show a non-perturbative behavior of HHG in terahertz regime from 3D Dirac semimetal, Cd3As2, at room temperature, and reveal the underlying nonlinear kinetics.

Unique electronmagnetic response of Weyl semimetals have only been reported in static field regime. Here, the authors report evidence of a dynamical chiral anomaly response realized by internal collective lattice deformation with an external static magnetic field in a Weyl semimetal NbAs.

Surface superconductivity in a Dirac semimetal remains rarely studied. Here, Huang and Zhou et al. report the evidence of proximity-induced surface superconductivity in a superconductor/Dirac semimetal hybrid system Nb/Cd3As2.

The anomalous Hall effect (AHE) is a key transport signature revealing the topological properties of magnetic compounds. In quantum materials, the classical linear dependence of the AHE on magnetization often breaks down, which is typically ascribed to the presence of topological magnetic or electronic textures. However, the complex electronic structure of these compounds may offer alternative, unexplored mechanisms. Here, we show that a giant nonlinear AHE can originate from a series of magnetic-field-induced Lifshitz transitions in the spin-dependent band structure. In our experiments on EuCd_{2}As_{2} the AHE contributes to 97% of the total Hall response, corresponding to a record anomalous Hall angle of 21%. Our scaling analysis and first-principles calculations demonstrate that the electronic structure is extremely sensitive to spin canting, with the magnetic field causing band crossing and band inversion and introducing a band gap when oriented along specific directions. Our results not only provide an ideal platform for Berry curvature engineering but reveal a general effect that may be applied to other material systems.

Whether the quantum Griffiths singularity state exists in one-dimensional (1D) systems remains elusive. Here, Zhang et al. report violation of the Pauli limit in the superconducting critical field and multiple phase transitions in the current-voltage hysteresis loops in a Ta2PdS5 nanowire, suggesting signatures of quasi-1D quantum Griffith singularity.

How the carriers behave in a Weyl semimetal if they occupy the lowest Landau level remains elusive. Here, the authors report evidences of electrons occupying zeroth chiral Landau levels with distinct linear dispersion behaviors for two inequivalent Weyl nodes in a Weyl semimetal NbAs.

A new type of cyclotron orbit combining surface Fermi arcs and bulk states in topological semimetals has recently been proposed as Weyl orbit. Here, Zhang et al. report the evolution of Shubnikov-de Haas oscillations in Dirac semimetal Cd3As2 nanoplates along with a quantum Hall state possibly arising from such Weyl orbit.

Mid-infrared pulsed sources are technologically important for sensing and spectroscopy but their implementation is challenging due to the lack of a tuneable optical switch. Here, the authors address this limitation by engineering the band structure of an emerging Dirac semimetal, Cd3As2.

Magnetotransport signature of topological semimetal states has been observed but restricted at very low temperature. Here, Zhanget al. report magnetic field-modulated chiral charge pumping and valley diffusion in Cd3As2up to room temperature.

It has been predicted that the presence of strong electronic correlations may generate new phases in materials with topologically non-trivial band structure. Here, the authors demonstrate the generation of Dirac mass in the correlated Dirac semimetal candidate ZrTe5under high magnetic fields.

Cd _3 As _2 is a new kind of three-dimensional (3D) Dirac semimetal with extraordinary carrier mobility, which can be viewed as ‘3D graphene’. Theory predicts that Cd _3 As _2 can be driven into a quantum spin Hall insulator with a sizeable band gap by reducing dimensionality. In this letter, we report the systematic growth of undoped Cd _3 As _2 thin films with the thickness of 50 ∼ 900 nm by molecular beam epitaxy. The magneto-transport study on these single-crystalline films shows a high mobility in the range of 3.8 ∼ 9.1 × 10 ^3 cm ^2 · V ^−1 · s ^−1 and a relative low electron concentration of 1 ∼ 8 × 10 ^17 cm ^−3 . Significantly, a thickness-induced semimetal-to-semiconductor transition was observed. In contrast with what is expected in the bulk counterpart, the 50 nm-thick Cd _3 As _2 film exhibits semiconducting characteristics, witnessing an emerged bandgap opening when the dimensionality is reduced. Finally, the analyses on the temperature- and angular-dependence of magneto-resistance and Shubnikov-de Hass oscillations reveal a non-trivial to trivial Berry’s phase transition that is in connection with the reduced dimensionality. Our results demonstrate that the Cd _3 As _2 thin films with unique electronic structure and high mobility hold promise for Dirac semimetal device applications.

We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3 during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performance p-type behavior with a high on/off ratio of 105 and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.