19 results on '"Hållstedt, J."'
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2. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers
3. Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs
4. High boron incorporation in selective epitaxial growth of SiGe layers
5. Vacancy-impurity pairs in n-type [formula omitted] studied by positron spectroscopy
6. A robust spacer gate process for deca-nanometer high-frequency MOSFETs
7. Improvement in epitaxial quality of selectively grown Si 1−xGe x layers with low pattern sensitivity for CMOS applications
8. Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
9. Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers
10. Application of selective epitaxy for formation of ultra shallow SiGe-based junctions
11. Growth of high quality epitaxial Si 1− x− yGe xC y layers by using chemical vapor deposition
12. Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors.
13. Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1-uGeu film.
14. The effect of carbon and germanium on phase transformation of nickel on Si[sub 1-x-y]Ge[sub x]C[sub y] epitaxial layers.
15. The influence of Si coverage in a chip on layer profile of selectively grown Si 1 − xGe x layers using RPCVD technique
16. Low-frequency Noise in SiGe Channel pMOSFETs on Ultra-Thin Body SOI with Ni-Silicided Source/Drain.
17. Improvement in epitaxial quality of selectively grown Si1− x Ge x layers with low pattern sensitivity for CMOS applications
18. Growth of high quality epitaxial Si1−x−yGexCy layers by using chemical vapor deposition
19. The influence of Si coverage in a chip on layer profile of selectively grown Si1− x Ge x layers using RPCVD technique
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