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We have designed and tested a parallel 8-bit ERSFQ arithmetic logic unit (ALU). The ALU design employs wave-pipelined instruction execution and features modular bit-slice architecture that is easily extendable to any number of bits and adaptable to current recycling. A carry signal synchronized with an asynchronous instruction propagation provides the wave-pipeline operation of the ALU. The ALU instruction set consists of 14 arithmetical and logical instructions. It has been designed and simulated for operation up to a 10 GHz clock rate at the 10-kA/cm2 fabrication process. The ALU is embedded into a shift-register-based high-frequency testbed with on-chip clock generator to allow for comprehensive high frequency testing for all possible operands. The 8-bit ERSFQ ALU, comprising 6840 Josephson junctions, has been fabricated with MIT Lincoln Lab 10-kA/cm2 SFQ5ee fabrication process featuring eight Nb wiring layers and a high-kinetic inductance layer needed for ERSFQ technology. We evaluated the bias margins for all instructions and various operands at both low and high frequency clock. At low frequency, clock and all instruction propagation through ALU were observed with bias margins of +/-11% and +/-9%, respectively. Also at low speed, the ALU exhibited correct functionality for all arithmetical and logical instructions with +/-6% bias margins. We tested the 8-bit ALU for all instructions up to 2.8 GHz clock frequency., 7 pages, 10 figures, 2 tables, 41 references. Presented at Applied Superconductivity Conference 2018 (ASC 2018), Oct. 28 - Nov. 2, 2018, Seattle, WA, USA. Paper 1EOr1C-06

We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the combined application of microwaves and magnetic field pulses can improve the performances of the device, increasing the separation between the critical current levels corresponding to logical '0' and '1'. The enhancement of the current level separation can be as high as 80% using an optimal set of parameters. We demonstrate that external RF fields can be used as an additional tool to manipulate the memory states, and we expect that this approach may lead to the development of new methods of selecting MJJs and manipulating their states in memory arrays for various applications., Comment: 7 pages, 3 figures

We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S' layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibit IcRn product only ~30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits., 8 pages,6 figures, Applied Superconductivity Conference (ASC'2012)

By studying soliton (fluxon) motion in long annular Josephson junctions it is possible to avoid the influence of the boundaries and soliton-soliton collisions present in linear junctions. A new experimental design consisting of a niobium coil placed on top of an annular junction has been used to insert individual fluxons or antifluxons into the junction in a controllable way. The dynamical behavior of different numbers of trapped fluxons was investigated. In addition, we were able to change the junction parameters by changing temperature. In some of the zero-field steps, the experiments reveal a small jump to higher values of the voltage at the top of the steps. This phenomenon can be caused by a crossover from a nonbunched state to a bunched state of the fluxon motion. By performing direct numerical simulations using the perturbed sine-Gordon equation with parameter values determined from the experiments we have been able to confirm the above explanation. ©1996 American Institute of Physics.