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In the past, different bacterial species have been tested for cancer therapy in preclinical and clinical studies. The success of bacterial cancer therapy is mainly dependent on the ability of the utilized bacteria to overcome the host immune defense system to colonize the tumors and to initiate tumor-specific immunity. In recent years, several groups have demonstrated that the gut microbiome plays an important role of modulation of the host immune response and has an impact on therapeutic responses in murine models and in cohorts of human cancer patients. Here we analyzed the impact of the gut microbiome on tumor colonization and tumor therapy by the Escherichia coli Nissle 1917 (EcN) strain. This EcN strain is a promising cancer therapy candidate with probiotic properties. In our study, we observed significantly better tumor colonization by EcN after antibiotic-induced temporal depletion of the gut microbiome and after two intranasal applications of the EcN derivate (EcN/pMUT-gfp Knr) in 4T1 tumor-bearing syngeneic BALB/c mice. In addition, we demonstrated significant reduction in tumor growth and extended survival of the EcN-treated mice in contrast to phosphate-buffered saline (PBS)-treated tumor-bearing control animals. Multispectral imaging of immune cells revealed that depletion of the gut microbiome led to significantly lower infiltration of cytotoxic and helper T cells (CD4 and CD8 cells) in PBS tumors of mice pretreated with antibiotics in comparison with antibiotic untreated PBS—or EcN treated mice. These findings may help in the future advancement of cancer treatment strategies using E. coli Nissle 1917.

Zirconium diboride (ZrB2) films have been deposited by direct current magnetron sputtering (DCMS) from a ZrB2 compound target on Al2O3 (0001) substrates held at 600, 700, 800, and 900 degrees C, and with two different axial magnetic field strengths, 34 and 104 G, generated using a coil surrounding the substrate. Plasma probe measurements show an increase of the ion fluxes on floating-potential substrates of the two different configurations by a factor of 2.8 for 104 G compared to 34 G, while the ion energy remained relatively constant at approximate to 12 eV. Time-of-flight elastic recoil detection analysis (ToF-ERDA) show that films deposited with a magnetic field of 34 G are highly overstoichiometric with B/Zr ratios approximate to 2.4, while films deposited with 104 G exhibit a B/Zr ratios approximate to 2.1. The levels of oxygen and carbon in the films are below 1 at. % irrespective of growth conditions. X-ray diffraction (XRD) 0/20 scans, complemented by pole figure measurements, reveal that all deposited films are 0001-oriented. XRD 0/20 scans of the 000t peak intensities and co (rocking-curve) widths show increased ZrB2 crystal quality with increasing temperature for both magnetic field strengths. Minimum electrical resistivity of approximate to 100 p omega cm is achieved for an axial magnetic field of 104 G, independent of temperature. Funding Agencies|Knut and Alice Wallenberg Foundation, Project Grant (The Boride Frontier) [KAW 2015.0043]; electron microscopy laboratory in Linkoping; Aforsk Foundation [16-430]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Swedish research council VR-RFISwedish Research Council [2017-00646_9]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-0053]

Planar defect structures appearing in transition metal diboride (TMB2) thin films, grown by different magnetron sputtering-deposition approaches over a wide compositional and elemental range, were systematically investi-gated. Atomically resolved scanning transmission electron microscopy (STEM) imaging, electron energy loss spec-troscopy (EELS) elemental mapping, and first principles calculations have been applied to elucidate the atomic structures of the observed defects. Two distinct types of antiphase boundary (APB) defects reside on the {1(1) over bar 00} planes. These defects are without (named APB-1) or with (APB-2) local deviation from stoichiometry. APB-2 de-fects, in turn, appear in different variants. It is found that APB-2 defects are governed by the films composition, while APB-1 defects are endemic. The characteristic structures, interconnections, and circumstances leading to the formation of these APB-defects, together with their formation energies, are presented. Funding Agencies|Swedish Research Council [2016-04412, 2021-03652, CTS 21:1272]; Swedish National Infrastructure in Advanced Electron Microscopy [2018-05973]; Knut and Alice Wallenberg Foundation; Fellowship/Scholar grant [2021-00171]; Swedish Foundation for Strategic Research (SSF) through the Research Infrastructure Fellow program [KAW 2015.0043, RIF 14-0074]; Carl Trygger foundation [EM16-0004]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]

We study microstructure, mechanical, and corrosion properties of Zr1-xCrxBy coatings deposited by hybrid high power impulse/DC magnetron co-sputtering (CrB2-HiPIMS/ZrB2-DCMS). Cr/(Zr + Cr) ratio, x, increases from 0.13 to 0.9, while B/(Zr + Cr) ratio, y, decreases from 2.92 to 1.81. As reference, ZrB2.18 and CrB1.81 layers are grown at 4000 W DCMS. ZrB2.18 and CrB1.81 columns are continual from near substrate toward the surface with open column boundaries. We find that the critical growth parameter to achieve dense films is the ratio of Cr+- dominated ion flux and the (Zr + B) neutral flux from the ZrB2 target. Thus, the alloys are categorized in two groups: films with x < 0.32 (low Cr+/(Zr + B) ratios) that have continuous columnar growth, rough surfaces, and open column boundaries, and films with x >= 0.32 (high Cr+/(Zr + B) ratios) that Cr+-dominated ion fluxes are sufficient to interrupt continuous columns, resulting in smooth surface and dense fine-grain microstructure. The pulsed metal-ion irradiation is more effective in film densification than continuous Ar+ bombardment. Dense Zr0.46Cr0.54B2.40 and Zr0.10Cr0.90B1.81 alloys are hard (> 30 GPa) and almost stress-free with relative nano indentation toughness of 1.3 MPa root m and 2.3 MPa root m, respectively, and remarkedly low corrosion rates (~& nbsp;1.0 x 10(-6) mA/cm(2) for Zr0.46Cr0.54B2.40 and~& nbsp; 2.1 x 10(-6) mA/cm(2) for Zr0.10Cr0.90B1.81). Funding Agencies|Swedish Research Council VR [2018-03957, 2019-00191, 2021-00357]; Swedish Energy Agency [51201-1]; Swedish for Strategic Research (SSF); Swedish National Graduate School in Neutron Scattering (SwedNess); Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials (AFM) at Linkoping University (Faculty Grant SFO Mat LiU)

Inter-criteria analysis was employed in VGO samples having a saturate content between 0.8 and 93.1 wt.% to define the statistically significant relations between physicochemical properties, empirical structural models and vacuum gas oil compositional information. The use of a logistic function and employment of a non-linear least squares method along with the aromatic ring index allowed for our newly developed correlation to accurately predict the saturate content of VGOs. The empirical models developed in this study can be used not only for obtaining the valuable structural information necessary to predict the behavior of VGOs in the conversion processes but can also be utilized to detect incorrectly performed SARA analyses. This work confirms the possibility of predicting the contents of VGO compounds from physicochemical properties and empirical models.

We recently showed that sputter-deposited Zr1-xTaxBy thin films have hexagonal AlB2-type columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. As-deposited layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we study the mechanical properties of ZrB2.4, Zr0.8Ta0.2B1.8, and Zr0.7Ta0.3B1.5 films annealed in Ar atmosphere as a function of annealing temperature Ta up to 1200 °C. In-situ and ex-situ nanoindentation analyses reveal that all films undergo age hardening up to Ta = 800 °C, with the highest hardness achieved for Zr0.8Ta0.2B1.8 (45.5±1.0 GPa). The age hardening, which occurs without any phase separation or decomposition, can be explained by point-defect recovery that enhances chemical bond density. Although hardness decreases at Ta > 800 °C due mainly to recrystallization, column coarsening, and planar defect annihilation, all layers show hardness values above 34 GPa over the entire Ta range.

Vacuum : surface engineering, surface instrumentation & vacuum technology 186, 110057 (2021). doi:10.1016/j.vacuum.2021.110057, Published by Elsevier Science, Amsterdam [u.a.]

In view of the increasing demand for achieving sustainable development, the quest for lowering energy consumption during thin film growth by magnetron sputtering becomes of particular importance. In addition, there is a demand for low-temperature growth of dense, hard coatings for protecting temperature-sensitive substrates. Here, we explore a method, in which thermally-driven adatom mobility, necessary to obtain high-quality fully-dense films, is replaced with that supplied by effective low-energy recoil creation resulting from high-mass metal ion irradiation of the growing film surface. This approach allows the growth of dense and hard films with no external heating at substrate temperatures T-s not exceeding 130 degrees C in a hybrid high-power impulse and de magnetron co-sputtering (HiPIMS/DCMS) setup involving a high mass (m > 180 amu) HiPIMS target and metal- ion-synchronized bias pulses. We specifically investigate the effect of the metal ion mass on the extent of densification, phase content, nanostructure, and mechanical properties of metastable cubic Ti0.50Al0.50N based thin films, which present outstanding challenges for phase stability control. Ti0.50Al0.50N based thin films are irradiated by group VIB transition metal (TM) target ions generated by Me-HiPIMS discharge, in which Me = Cr (m(Cr)= 52.0 amu), Mo (m(Mo) = 96.0 amu), and W (m(W) = 183.8 amu). Three series of (Ti1-yAly)(1-x)MexN films are grown with x = Me/(Me+Al+Ti) varied intentionally by adjusting the DCMS powers, while y = Al/(Al+Ti) also varies as a result of Me+ ion irradiation. Results reveal a strong dependence of film properties on the mass of the HiPIMS-generated metal ions. All layers deposited with Cr+ irradiation exhibit porous nanostructure, high ox- ygen content, and poor mechanical properties. In contrast, (Ti1-yAly)(1-x)WxN films are fully-dense even with the lowest W concentration, x = 0.09, show no evidence of hexagonal AlN precipitation, and exhibit state-of the-art mechanical properties typical of Ti0.50Al0.50N grown at 500 degrees C. The process energy consumption is lowered by 64% with no negative impact on the coating quality. TRIM simulations provide an insight into the densification mechanisms. Funding Agencies|Swedish Energy AgencySwedish Energy Agency [51201-1]; Knut and Alice Wallenberg Foundation Scholar Grant [KAW2016.0358]; Competence Center Functional Nanoscale Materials (FunMat-II) VINNOVA grantVinnova [201605156]; Swedish Research Council VR Grant [2018-03957]; VINNOVA grantVinnova [2019-04882]; Carl Tryggers Stiftelse for Vetenskaplig Forskning [CTS 17:166, CTS 15:219, CTS 14:431]; Swedish Research Council VR-RFISwedish Research Council [2017-00646_9]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-0053]

Refractory transition-metal (TM) diborides have high melting points, excellent hardness, and good chemical stability. However, these properties are not sufficient for applications involving extreme environments that require high mechanical strength as well as oxidation and corrosion resistance. Here, we study the effect of Cr addition on the properties of ZrB2-rich Zr1-xCrxBy thin films grown by hybrid high-power impulse and dc magnetron co-sputtering (Cr-HiPIMS/ZrB2-DCMS) with a 100-V Cr-metal-ion synchronized potential. Cr metal fraction, x = Cr/(Zr+Cr), is increased from 0.23 to 0.44 by decreasing the power Pzrb2 applied to the DCMS ZrB2 target from 4000 to 2000 W, while the average power, pulse width, and frequency applied to the HiPIMS Cr target are maintained constant. In addition, y decreases from 2.18 to 1.11 as a function of Pzrb2, as a result of supplying Cr to the growing film and preferential B resputtering caused by the pulsed Cr-ion flux. ZrB2.18, Zr0.77Cr0.23B1.52, Zr0.71Cr0.29B1.42, and Zr0.68Cr0.32B1.38 2 films have hexagonal AlB2 crystal structure with a columnar nanostructure, while Zr0.64Cr0.36B1.30 and Zr0.56Cr0.44B1.11 are amorphous. All films show hardness above 30 GPa. Zr0.56Cr0.44B1.11 alloys exhibit much better toughness, wear, oxidation, and corrosion resistance than ZrB2.18. This combination of properties makes Zr0.56Cr0.44B1.11 ideal candidates for numerous strategic applications. Funding agencies: We acknowledge support from the Knut and Alice Wallenberg (KAW) foundation for Project funding (KAW 2015.0043). Financial support from the Swedish Research Council VR Grant 2018–03957 and 642-2013-8020, the VINNOVA Grant 2019–04882, and Carl Tryggers Stiftelse contracts CTS 15:219, CTS 17:166, and CTS 14:431 are also gratefully acknowledged. Furthermore, the authors acknowledge financial support from the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO Mat LiU No. 2009 00971). Supports from the Swedish research council VR-RFI (#2017–00646_9) for the Accelerator based ion-technological center and from the Swedish Foundation for Strategic Research (contract RIF14-0053; for the tandem accelerator laboratory in Uppsala University, and contract RIF14-0074; for the electron microscopy laboratory) are acknowledged.

Transition-metal diboride thin films, which have high melting points, excellent hardness, and good chemical and thermal conductivity, severely suffer from rapid oxidation in air. Here, we explore the influence of varying B content and resulting nanostructure change on the oxidation properties of TiBx thin films, with x = 1.43, 2.20, and 2.70. Results show that all as-deposited layers have columnar structure. The column boundaries of asdeposited TiB2.20 and TiB2.20 films grown by direct current magnetron sputtering (DCMS) are B-rich, while the as-deposited TiB1.43 films grown by high-power impulse magnetron sputtering (HiPIMS) show no apparent grain boundary phases and contain Ti-rich planar defects. The oxidation rate of TiBL43 air-annealed at 400 degrees C up to 48 h is significantly lower than that of TiB2.20 and TiB2.20 films. The oxidation rate of TiB1.43, TiB2.20, and TiB2.20 films was measured at 2.9 +/- 1.5, 7.1 +/- 1.0, and 20.0 +/- 5.0 nm/h, respectively, with no spallation of even as thick oxide scales as 0.5 mu m in any of the films. The improved oxidation resistance can be explained by the absence of B-rich tissue phase at the column boundaries of understoichiometric TiBx films, a phase that interlaces the nanocolumnar TiB2 structures in the corresponding overstoichiometric films. An easy oxidation pathway is thus eliminated. Funding Agencies|Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0004]; Knut and Alice Wallenberg Foundation (KAW)Knut & Alice Wallenberg Foundation [KAW 2015.0043, RIF 14-0074]; KAW; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat-LiU) [2009 00971]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [642-2013-8020, 2016-04412]

Hybrid high power impulse/direct current magnetron sputtering (HiPIMS/DCMS) film growth technique with metal-ion-synchronized substrate bias allows for significant energy savings as compared to conventional PVD methods. For carefully selected type of metal ion irradiation, taking into account ion mass, ionization potential, and reactivity towards working gas, fully dense and hard films can be obtained with no intentional substrate heating. The thermally-driven adatom mobility, which is an essential densification mechanism in conventional film growth that takes place at elevated temperatures, is replaced with that supplied by effective low-energy recoil creation. In this contribution we explore effects of the high-mass W+ irradiation, which has proven to be the most efficient in densifying Ti0.50Al0.50N layers, serving here as a model system, grown with no substrate heating. We study the effects of two essential parameters: W+ energy EW+ and W concentration x, on film porosity, phase content, nanostructure, and mechanical properties. EW+ varies from similar to 90 to similar to 630 eV (controlled by substrate bias voltage amplitude V-s) and x from 0.02 to 0.12 (controlled by the HiPIMS pulse length), while the HiPIMS peak target current is kept constant. Results reveal that a strong coupling exists between the W+ incident energy and the minimum W concentration required to grow dense layers. Funding Agencies|Swedish Research Council VRSwedish Research Council [2018-03957]; Swedish Energy AgencySwedish Energy Agency [51201-1]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW2016.0358]; Competence Center Functional Nanoscale Materials (FunMat-II) VINNOVA grantVinnova [2016-05156]; Carl Tryggers Stiftelse for Vetenskaplig Forskning [CTS 20:150, CTS 15:219, CTS 14:431]; Swedish research council VR-RFISwedish Research Council [2017-00646_9]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-0053]

The atomic structure and local composition of high quality epitaxial substoichiometric titanium diboride (TiB1.9) thin film, deposited by unbalanced magnetron sputtering, were studied using analytical high-resolution scanning transmission electron microscopy, density functional theory, and image simulations. The unpaired Ti is pinpointed to inclusion of Ti-based stacking faults within a few atomic layers, which terminates the {1 (1) over bar 00} prismatic planes of the crystal structure and attributed to the absence of B between Ti planes that locally relaxes the structure. This mechanism allows the line compound to accommodate off-stoichiometry and remain a line compound between defects. The planar defects are embedded in otherwise stoichiometric TiB2 and are delineated by insertion of dislocations. An accompanied decrease in Ti-Ti bond lengths along and across the faults is observed. (c) 2020ActaMaterialiaInc. PublishedbyElsevierLtd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/) Funding Agencies|Swedish Research CouncilSwedish Research Council [2016-04412, 642-2013-8020, 2016-07213]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-00 04, RIF 14-0074]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

// Ivan Petrov 1, 2, 3, 4 , Maria Suntsova 1, 5 , Elena Ilnitskaya 2 , Sergey Roumiantsev 6 , Maxim Sorokin 7, 8 , Andrew Garazha 1, 9 , Pavel Spirin 10 , Timofey Lebedev 10 , Nurshat Gaifullin 11 , Sergey Larin 1 , Olga Kovalchuk 12 , Dmitry Konovalov 1, 13 , Vladimir Prassolov 10 , Alexander Roumiantsev 1 and Anton Buzdin 1, 5, 7 1 D. Rogachev Federal Research Center of Pediatric Hematology, Oncology and Immunology, Moscow, Russia 2 First Oncology Research and Advisory Center, Moscow, Russia 3 Moscow Institute of Physics and Technology, Moscow, Russia 4 V.A. Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, Russia 5 Group for Genomic Regulation of Cell Signaling Systems, Shemyakin-Ovchinnikov Institute of Bioorganic Chemistry, Moscow, Russia 6 Department of Oncology, Hematology and Radiology, N.I.Pirogov Russian National Research Medical University, Moscow, Russia 7 National Research Centre “Kurchatov Institute”, Centre for Convergence of Nano-, Bio-, Information and Cognitive Sciences and Technologies, Moscow, Russia 8 Pathway Pharmaceuticals, Hong Kong, China 9 Centre for Biogerontology and Regenerative Medicine, IC Skolkovo, Moscow, Russia 10 Engelhardt Institute of Molecular Biology, Russian Academy of Sciences, Mosow, Russia 11 Moscow State University, Faculty of Fundamental Medicine, Moscow, Russia 12 Department of Biological Sciences, University of Lethbridge, Lethbridge, Canada 13 Federal State Budgetary Educational Institution of Further Professional Education “Russian Medical Academy of Continuous Professional Education” of the Ministry of Healthcare of the Russian Federation, Moscow, Russia Correspondence to: Anton Buzdin, email: bu3din@mail.ru Keywords: neuroblastoma, MYCN-amplification, pediatric, gene expression, signaling pathways Received: March 29, 2017 Accepted: May 05, 2017 Published: July 28, 2017 ABSTRACT Neuroblastoma is a pediatric cancer arising from sympathetic nervous system. Remarkable heterogeneity in outcomes is one of its widely known features. One of the traits strongly associated with the unfavorable subtype is the amplification of oncogene MYCN . Here, we performed cross-platform biomarker detection by comparing gene expression and pathway activation patterns from the two literature reports and from our experimental dataset, combining profiles for the 761 neuroblastoma patients with known MYCN amplification status. We identified 109 / 25 gene expression / pathway activation biomarkers strongly linked with the MYCN amplification. The marker genes/pathways are involved in the processes of purine nucleotide biosynthesis, ATP-binding, tetrahydrofolate metabolism, building mitochondrial matrix, biosynthesis of amino acids, tRNA aminoacylation and NADP-linked oxidation-reduction processes, as well as in the tyrosine phosphatase activity, p53 signaling, cell cycle progression and the G1/S and G2/M checkpoints. To connect molecular functions of the genes involved in MYCN -amplified phenotype, we built a new molecular pathway using known intracellular protein interaction networks. The activation of this pathway was highly selective in discriminating MYCN -amplified neuroblastomas in all three datasets. Our data also suggest that the phosphoinositide 3-kinase (PI3K) inhibitors may provide new opportunities for the treatment of the MYCN -amplified neuroblastoma subtype.

Inter-patient molecular heterogeneity is the major declared driver of an expanding variety of anticancer drugs and personalizing their prescriptions. Here, we compared interpatient molecular heterogeneities of tumors and repertoires of drugs or their molecular targets currently in use in clinical oncology. We estimated molecular heterogeneity using genomic (whole exome sequencing) and transcriptomic (RNA sequencing) data for 4890 tumors taken from The Cancer Genome Atlas database. For thirteen major cancer types, we compared heterogeneities at the levels of mutations and gene expression with the repertoires of targeted therapeutics and their molecular targets accepted by the current guidelines in oncology. Totally, 85 drugs were investigated, collectively covering 82 individual molecular targets. For the first time, we showed that the repertoires of molecular targets of accepted drugs did not correlate with molecular heterogeneities of different cancer types. On the other hand, we found that the clinical recommendations for the available cancer drugs were strongly congruent with the gene expression but not gene mutation patterns. We detected the best match among the drugs usage recommendations and molecular patterns for the kidney, stomach, bladder, ovarian and endometrial cancers. In contrast, brain tumors, prostate and colorectal cancers showed the lowest match. These findings provide a theoretical basis for reconsidering usage of targeted therapeutics and intensifying drug repurposing efforts.

Magnetron sputter deposition of TiBx thin films from a TiB2 target typically results in highly overstoichiometric films due to differences in sputtered-atom ejection angles and gas-phase scattering during transport to the substrate. This study investigates the effects of the magnetron magnetic field strength at the substrate position and the Ar sputtering pressure on the resulting film composition and crystalline quality. It is shown that the B/Ti atomic ratio can be reduced from 2.7 to 2.1 by increasing the Ar pressure from 5 mTorr to 20 mTorr, a trend consistent with previous work. Despite the use of a relatively high Ar pressure, a change to a stronger outer magnetic pole leads to, dense TiB2.1 films of high crystal quality, as shown by X-ray diffraction, scanning transmission electron microscopy, and specific resistivity of 32 mu Omega cm. For epitaxial films deposited at 900 degrees C on Al2O3(001), a TiB2[110]//Al2O3[100] orientational relationship were obtained. Funding Agencies|Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Link_oping University [2009 00971]; VR-RFI (Vetenskapsradet) [821-2012-5144]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [SSF, RIF14-0053]

We recently showed that Zr1−xTaxBy thin films have columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. Layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we determine the atomic-scale nanostructure of sputter-deposited columnar Zr0.7Ta0.3B1.5 thin films. The columns, 95 ± 17 Å, are core/shell nanostructures in which 80 ± 15-Å cores are crystalline hexagonal-AlB2-structure Zr-rich stoichiometric Zr1−xTaxB2. The shell structure is a narrow dense, disordered region that is Ta-rich and highly B-deficient. The cores are formed under intense ion mixing via preferential Ta segregation, due to the lower formation enthalpy of TaB2 than ZrB2, in response to the chemical driving force to form a stoichiometric compound. The films with unique combination of nanosized crystalline cores and dense metallic-glass-like shells provide excellent mechanical properties. Funding agencies: Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; electron microscopy laboratory in Linkoping; Swedish Research Council VRSwedish Research Council [2014-5790, 2018-03957, 2019-05403, 642-2013-8020]; VINNOVA Gran

Refractory transition-metal diborides (TMB2) are candidates for extreme environments due to melting points above 3000 degrees C, excellent hardness, good chemical stability, and thermal and electrical conductivity. However, they typically suffer from rapid high-temperature oxidation. Here, we study the effect of Al addition on the oxidation properties of sputter-deposited TiB2-rich Ti1-xAlxBy thin films and demonstrate that alloying the films with Al significantly increases the oxidation resistance with a slight decrease in hardness. TiB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a TiB2 target, while Ti1-xAlxBy alloy films are grown by hybrid high-power impulse and dc magnetron co-sputtering (Al-HiPIMS/TiB2-DCMS). All as-deposited films exhibit columnar structure. The column boundaries of TiB2.4 are B-rich, while Ti0.68Al0.32B1.35 alloys have Ti-rich columns surrounded by a Ti(1-x)Al(x)By tissue phase which is predominantly Al rich. Air-annealing TiB2.4 at temperatures above 500 degrees C leads to the formation of oxide scales that do not contain B and mostly consist of a rutile-TiO2 (s) phase. The resulting oxidation products are highly porous due to the evaporation of B2O3 (g) phase as well as the coarsening of TiO2 crystallites. This poor oxidation resistance is significantly improved by alloying with Al. While air-annealing at 800 degrees C for 0.5 h results in the formation of an similar to 1900-nm oxide scale on TiB2.4, the thickness of the scale formed on the Ti0.68Al0.32B1.35 alloys is similar to 470 nm. The enhanced oxidation resistance is attributed to the formation of a dense, protective Al-containing oxide scale that considerably decreases the oxygen diffusion rate by suppressing the oxide-crystallites coarsening. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. Funding Agencies|Knut and Alice Wallenberg (KAW) foundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Research Council VR Grant [2014-5790, 2018-03957, 642-2013-8020]; VINNOVAVinnova [2018-04290]; Aforsk foundation [16-359]; Carl Tryggers Stiftelse [CTS 15:219, CTS 17:166, CTS 14:431]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]; Swedish research council VR-RFISwedish Research Council [2017-00646_9]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-0053, RIF14-0074]

Acute lymphoblast leukemia (ALL) is characterized by overproduction of immature white blood cells in the bone marrow. ALL is most common in the childhood and has high (>80%) cure rate. In contrast, acute myeloid leukemia (AML) has far greater mortality rate than the ALL and is most commonly affecting older adults. However, AML is a leading cause of childhood cancer mortality. In this study, we compare gene expression and molecular pathway activation patterns in three normal blood, seven pediatric ALL and seven pediatric AML bone marrow samples. We identified 172/94 and 148/31 characteristic gene expression/pathway activation signatures, clearly distinguishing pediatric ALL and AML cells, respectively, from the normal blood. The pediatric AML and ALL cells differed by 139/34 gene expression/pathway activation biomarkers. For the adult 30 AML and 17 normal blood samples, we found 132/33 gene expression/pathway AML-specific features, of which only 7/2 were common for the adult and pediatric AML and, therefore, age-independent. At the pathway level, we found more differences than similarities between the adult and pediatric forms. These findings suggest that the adult and pediatric AMLs may require different treatment strategies.

Contains fulltext : 215333.pdf (Publisher’s version ) (Closed access) BACKGROUND: Patients with stable coronary artery disease and diabetes with previous percutaneous coronary intervention (PCI), particularly those with previous stenting, are at high risk of ischaemic events. These patients are generally treated with aspirin. In this trial, we aimed to investigate if these patients would benefit from treatment with aspirin plus ticagrelor. METHODS: The Effect of Ticagrelor on Health Outcomes in diabEtes Mellitus patients Intervention Study (THEMIS) was a phase 3 randomised, double-blinded, placebo-controlled trial, done in 1315 sites in 42 countries. Patients were eligible if 50 years or older, with type 2 diabetes, receiving anti-hyperglycaemic drugs for at least 6 months, with stable coronary artery disease, and one of three other mutually non-exclusive criteria: a history of previous PCI or of coronary artery bypass grafting, or documentation of angiographic stenosis of 50% or more in at least one coronary artery. Eligible patients were randomly assigned (1:1) to either ticagrelor or placebo, by use of an interactive voice-response or web-response system. The THEMIS-PCI trial comprised a prespecified subgroup of patients with previous PCI. The primary efficacy outcome was a composite of cardiovascular death, myocardial infarction, or stroke (measured in the intention-to-treat population). FINDINGS: Between Feb 17, 2014, and May 24, 2016, 11 154 patients (58% of the overall THEMIS trial) with a history of previous PCI were enrolled in the THEMIS-PCI trial. Median follow-up was 3.3 years (IQR 2.8-3.8). In the previous PCI group, fewer patients receiving ticagrelor had a primary efficacy outcome event than in the placebo group (404 [7.3%] of 5558 vs 480 [8.6%] of 5596; HR 0.85 [95% CI 0.74-0.97], p=0.013). The same effect was not observed in patients without PCI (p=0.76, pinteraction=0.16). The proportion of patients with cardiovascular death was similar in both treatment groups (174 [3.1%] with ticagrelor vs 183 (3.3%) with placebo; HR 0.96 [95% CI 0.78-1.18], p=0.68), as well as all-cause death (282 [5.1%] vs 323 [5.8%]; 0.88 [0.75-1.03], p=0.11). TIMI major bleeding occurred in 111 (2.0%) of 5536 patients receiving ticagrelor and 62 (1.1%) of 5564 patients receiving placebo (HR 2.03 [95% CI 1.48-2.76], p

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Over the past decades, enormous effort has been dedicated to enhancing the hardness of refractory ceramic materials. Typically, however, an increase in hardness is accompanied by an increase in brittleness, which can result in intergranular decohesion when materials are exposed to high stresses. In order to avoid brittle failure, in addition to providing high strength, films should also be ductile, i.e., tough. However, fundamental progress in obtaining hard-yet-ductile ceramics has been slow since most toughening approaches are based on empirical trial-and-error methods focusing on increasing the strength and ductility extrinsically, with a limited focus on understanding thin-film toughness as an inherent physical property of the material. Thus, electronic structure investigations focusing on the origins of ductility vs. brittleness are essential in understanding the physics behind obtaining both high strength and high plastic strain in ceramics films. Here, we review recent progress in experimental validation of density functional theory predictions on toughness enhancement in hard ceramic films, by increasing the valence electron concentration, using examples from the V1-xWxN and V1-xMoxN alloy systems. Funding Agencies|Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2011-0094]; Swedish Research CouncilSwedish Research Council [VR 2014-5790]; Swedish Government Strategic Research Area Grant in Materials Science (SFO Mat-LiU) on Advanced Functional Materials; Olle Engkvist Foundation; VINN Excellence Center Functional Nanoscale Materials (FunMat-2) Grant [2016-05156]

Refractory transition-metal diborides exhibit inherent hardness. However, this is not always sufficient to prevent failure in applications involving high mechanical and thermal stress, since hardness is typically accompanied by brittleness leading to crack formation and propagation. Toughness, the combination of hardness and ductility, is required to avoid brittle fracture. Here, the authors demonstrate a strategy for simultaneously enhancing both hardness and ductility of ZrB2-rich thin films grown in pure Ar on Al2O3(0001) and Si(001) substrates at 475 °C. ZrB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a ZrB2 target, while Zr1−xTaxBy alloy films are grown, thus varying the B/metal ratio as a function of x, by adding pulsed high-power impulse magnetron sputtering (HiPIMS) from a Ta target to deposit Zr1−xTaxBy alloy films using hybrid Ta-HiPIMS/ZrB2-DCMS sputtering with a substrate bias synchronized to the metal-rich portion of each HiPIMS pulse. The average power P Ta (and pulse frequency) applied to the HiPIMS Ta target is varied from 0 to 1800 W (0 to 300 Hz) in increments of 600 W (100 Hz). The resulting boron-to-metal ratio, y = B/(Zr+Ta), in as-deposited Zr1−xTaxBy films decreases from 2.4 to 1.5 as P Ta is increased from 0 to 1800 W, while x increases from 0 to 0.3. A combination of x-ray diffraction (XRD), glancing-angle XRD, transmission electron microscopy (TEM), analytical Z-contrast scanning TEM, electron energy-loss spectroscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, and atom-probe tomography reveals that all films have the hexagonal AlB2 crystal structure with a columnar nanostructure, in which the column boundaries of layers with 0 ≤ x

We compare the performance of conventional DC magnetron sputter-deposited (DCMS) TiN diffusion barriers between Cu overlayers and Si(001) substrates with Ti0.84Ta0.16N barriers grown by hybrid DCMS/high-power impulse magnetron sputtering (HiPIMS) with substrate bias synchronized to the metal-rich portion of each pulse. DCMS power is applied to a Ti target, and HiPIMS applied to Ta. No external substrate heating is used in either the DCMS or hybrid DCMS/HiPIMS process in order to meet future industrial thermal-budget requirements. Barrier efficiency in inhibiting Cu diffusion into Si(001) while annealing for 1 hour at temperatures between 700 and 900 degrees C is investigated using scanning electron microscopy, X-ray diffraction, four-point-probe sheet resistance measurements, transmission electron microscopy, and energy-dispersive X-ray spectroscopy profiling. Ti0.84Ta0.16N barriers are shown to prevent large-scale Cu diffusion at temperatures up to 900 degrees C, while conventional TiN barriers fail at amp;lt;= 700 degrees C. The improved performance of the Ti0.84Ta0.16N barrier is due to film densification resulting from HiPIMS pulsed irradiation of the growing film with synchronized Ta ions. The heavy ion bombardment dynamically enhances near-surface atomic mixing during barrier-layer deposition. Funding Agencies|Austrian Federal Government (from Bundesministerium fur Verkehr, Innovation und Technologie); Austrian Federal Government (Bundesministerium fur Wirtschaft, Familie und Jugend); Styrian; Tyrolean Provincial Government; Standortagentur Tirol; Swedish Research Council [2013 4018]; Knut and Alice Wallenberg Foundation; Knut and Alice Wallenberg Project "Isotope"; VINN Excellence Center Functional Nanoscale Materials (FunMat-2) [2016-05156]; Aforsk Foundation [16-359]; Carl Tryggers Foundation [CTS 17:166]

Reactive transition-metal (TM) nitride film growth employing bias-synchronized high power impulse magnetron sputtering (HiPIMS) requires a detailed knowledge of the time evolution of metal-and gas-ion fluxes incident at the substrate plane in order to precisely tune momentum transfer and, hence, provide the recoil density and energy necessary to eliminate film porosity at low deposition temperatures without introducing significant film stress. Here, the authors use energy- and time-dependent mass spectrometry to analyze the evolution of metal-and gas-ion fluxes at the substrate plane during reactive HiPIMS sputtering of groups IVb and VIb TM targets in Ar/N-2 atmospheres. The time-and energy-integrated metal/gas ion ratio NMe+/Ng+ incident at the substrate is significantly lower for group IVb TMs (ranging from 0.2 for Ti to 0.9 for Hf), due to high N-2 reactivity which results in severely reduced target sputtering rates and, hence, decreased rarefaction. In contrast, for less reactive group VIb metals, sputtering rates are similar to those in pure Ar as a result of significant gas heating and high NMe+/Ng+ ratios, ranging from 2.3 for Cr to 98.1 for W. In both sets of experiments, the peak target current density is maintained constant at 1 A/cm(2). Within each TM group, NMe+/N(g+)scales with increasing metal-ion mass. For the group-VIb elements, sputtered-atom Sigmund-Thompson energy distributions are preserved long after the HiPIMS pulse, in contradistinction to group-IVb TMs for which the energy distributions collapse into narrow thermalized peaks. For all TMs, the N+ flux dominates that of N-2(+) ions, as the molecular ions are collisionally dissociated at the target, and N+ exhibits ion energy distribution functions resembling those of metal ions. The latter result implies that both N+ and Me+ species originate from the target. High-energy Ar+ tails, assigned to ionized reflected-Ar neutrals, are observed with heavier TM targets. Published by the AVS. Funding Agencies|Swedish Research Council VR Grant [2014-5790]; Aforsk foundation [16359]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Knut and Alice Wallenberg foundation [KAW 2015.0043]

TiBx thin films grown from compound TiB2 targets by magnetron sputter deposition are typically highly over-stoichiometric, with x ranging from 3.5 to 2.4, due to differences in Ti and B preferential-ejection angles and gas-phase scattering during transport from the target to the substrate. Here, the authors demonstrate that stoichiometric TiB2 films can be obtained using highpower impulse magnetron sputtering (HiPIMS) operated in power-controlled mode. The B/Ti ratio x of films sputter-deposited in Ar is controllably varied from 2.08 to 1.83 by adjusting the length of HiPIMS pulses t(on) between 100 and 30 mu s, while maintaining average power and pulse frequency constant. This results in peak current densities J(T), peak ranging from 0.27 to 0.88 A/cm(2). Energy- and time-resolved mass spectrometry analyses of the ion fluxes incident at the substrate position show that the density of metal ions increases with decreasing t(on) due to a dramatic increase in J(T, peak) resulting in the strong gas rarefaction. With t(on)amp;lt;60 mu s (J(T),(peak)amp;gt; 0.4 A/cm(2)), film growth is increasingly controlled by ions incident at the substrate, rather than neutrals, as a result of the higher plasma dencity and, hence, electron-impact ionization probablity. Thus, since sputter- ejected Ti atoms have a higher probability of being ionized than B atoms, due to their lower first-ionization potential and larger ionization cross-section, the Ti concentration in as-deposited films increases with decreasing ton (increasing J(T,peak)) as ionized sputtered species are steered to the substrate by the plasma in order to maintain charge neutrality. Published by the AVS. Funding Agencies|Swedish Research Council VR [2014-5790, 642-2013-8020]; Knut and Alice Wallenberg foundation [KAW 2015.0043]; Aforsk foundation [16-359]; Carl Tryggers Stiftelse Contract [CTS 15:219, CTS 17:166, CTS 14:431]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

International audience

Large-scale classical molecular dynamics simulations of epitaxial TiN/TiN(001) thin film growth at 1200 K, a temperature within the optimal range for epitaxial TiN growth, with an incident N-to-Ti flux ratio of four, are carried out using incident N energies E-N = 2 and 10 eV and incident Ti energy E-Ti = 2 eV. To further highlight the effect of E-N, we grow a bilayer film with E-N = 2 eV initially and then switch to E-N = 10 eV. As-deposited layers are analyzed as a function of composition, island-size distribution, island-edge orientation, and vacancy formation. Results show that growth with E-N = 2 eV results in films that are globally overstoichiometric with islands bounded by N-terminated polar 110 edges, whereas films grown with E-N = 10 eV are flatter and closer to stoichiometric. However, E-N = 10 eV layers exhibit local N deficiency leading to the formation of isolated 111-oriented islands. Films grown by changing the incident energy from 2 to 10 eV during growth are more compact than those grown entirely with E-N = 2 eV and exhibit greatly reduced concentrations of upper-layer adatoms, admolecules, and small clusters. Islands with 110 edges formed during growth with E-N = 2 eV transform to islands with 100 edges as E-N is switched to 10 eV. Published by AIP Publishing. Funding Agencies|Swedish Research Council (VR) Linkoping Linnaeus Initiative LiLi-NFM [2008-6572, 2009-00971, 2013-4018, 2014-5790]; Swedish Government Strategic Research Area Grant in Materials Science on Advanced Functional Materials; Knut and Alice Wallenberg Foundation [2011-KAW]; Olle Engkvist Foundation

The authors use energy- and time-dependent mass spectrometry to analyze the evolution of metal- and gas-ion fluxes incident at the substrate during high-power pulsed magnetron sputtering (HiPIMS) of groups IVb and VIb transition-metal (TM) targets in Ar. For all TMs, the time-and energy-integrated metal/gas-ion ratio at the substrate plane NMe+/NAr+ increases with increasing peak target current density J(T,peak) due to rarefaction. In addition, NMe+/NAr+ exhibits a strong dependence on metal/gas-atom mass ratio m(Me)/m(g) and varies from similar to 1 for Ti (m(Ti)/m(Ar) = 1.20) to similar to 100 for W (m(W)/m(Ar) = 4.60), with J(T,peak) maintained constant at 1 A/cm(2). Time-resolved ion-energy distribution functions confirm that the degree of rarefaction scales with m(Me)/m(g): for heavier TMs, the original sputtered-atom Sigmund-Thompson energy distributions are preserved long after the HiPIMS pulse, which is in distinct contrast to lighter metals for which the energy distributions collapse into a narrow thermalized peak. Hence, precise timing of synchronous substrate-bias pulses, applied in order to reduce film stress while increasing densification, is critical for metal/gas combinations with m(Me)/m(g) near unity, while with m(Me)/m(g) amp;gt;amp;gt; 1, the width of the synchronous bias pulse is essentially controlled by the metal-ion time of flight. The good agreement between results obtained in an industrial system employing 440 cm(2) cathodes and a laboratory-scale system with a 20 cm(2) target is indicative of the fundamental nature of the phenomena. Funding Agencies|Swedish Research Council VR [2014-5790]; Aforsk Foundation [16-359]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Knut and Alice Wallenberg Foundation [KAW 2015.0043]

Hard Ti1-xAlxN thin films are of importance for metal-cutting applications. The hardness, thermal stability, and oxidation resistance of these coatings can be further enhanced by alloying with TaN. We use a hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) technique to grow dense and hard Ti0.41Al0.51Ta0.08N alloys without external heating (T-s amp;lt; 150 degrees C). Separate Ti and Al targets operating in the DCMS mode maintain a deposition rate of similar to 50 nm/min, while irradiation of the growing film by heavy Ta+/Ta2+ ions from the HIPIMS-powered Ta target, using dc bias synchronized to the metal-ion-rich part of each HIPIMS pulse, provides effective near-surface atomic mixing resulting in densification. The substrate is maintained at floating potential between the short bias pulses to minimize Ar+ bombardment, which typically leads to high compressive stress. Transmission and scanning electron microscopy analyses reveal dramatic differences in the microstructure of the co-sputtered HIPIMS/DCMS films (Ta-HIPIMS) compared to films with the same composition grown at floating potential with all targets in the DCMS mode (Ta-DCMS). The Ta-DCMS alloy films are only similar to 70% dense due to both inter-and intra-columnar porosity. In contrast, the Ta-HIPIMS layers exhibit no inter-columnar porosity and are essentially fully dense. The mechanical properties of Ta-HIPIMS films are significantly improved with hardness and elastic modulus values of 28.0 and 328 GPa compared to 15.3 and 289 GPa for reference Ta-DCMS films. Published by AIP Publishing. Funding Agencies|Swedish Research Council VR Grant [2013-4018, 2014-5790]; VINN Excellence Center Functional Nanoscale Materials (FunMat); Aforsk Foundation Grant [16-359]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Knut and Alice Wallenberg Foundation [2011.0143]

We use molecular dynamics (MD) based on the modified embedded atom method (MEAM) to determine diffusion coefficients and migration pathways for Ti and N adatoms (Ti-ad and N-ad) on TiN(111). The reliability of the classical model-potential is verified by comparison with density functional theory (DFT) results at 0 K. MD simulations carried out at temperatures between 600 and 1800 K show that both Ti-ad and N-ad favor fcc surface sites and migrate among them by passing through metastable hcp positions. We find that N-ad species are considerably more mobile than Ti-ad on TiN(111); contrary to our previous results on TiN(001). In addition, we show that lattice vibrations at finite temperatures strongly modify the potential energy landscape and result in smaller adatom migration energies, E-a = 1.03 for Ti-ad and 0.61 eV for N-ad, compared to 0 K values E-aOK = 1.55 (Ti-ad) and 0.79 eV (N-ad). We also demonstrate that the inclusion of dipole corrections, neglected in previous DFT calculations, is necessary in order to obtain the correct formation energies for polar surfaces such as TiN(111). (C) 2016 Elsevier B.V. All rights reserved. Funding Agencies|Knut and Alice Wallenberg Foundation [2011.0094]; Swedish Research Council (VR) [2014-5790]; Linkoping Linnaeus Initiative LiLi-NFM [2008-6572]; Swedish Government Strategic Research Area Grant in Materials Science on Advanced Functional Materials through Swedens innovation agency VINNOVA [MatLiU 2009-00971]