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Probing the evolution of mixed-phase states in materials offers unique insights into the microscopic mechanism of phase transitions. Here, Mattoni et al. report imaging of nanoscale formation and growth of insulating domains across the metal-insulator transition in NdNiO3thin films, uncovering a rich interplay between structural and electronic degrees of freedom.

Oxide materials can be combined to create heterostructures exhibiting complex properties not found in either substance individually. Here, the authors observe antiferromagnetic interlayer exchange coupling between ferromagnetic lanthanum manganite and nominally paramagnetic lanthanum nickel oxide.

Rare earth vanadate perovskites exhibit a phase diagram in which two different types of structural distortions coexist: the strongest, the rotation of the oxygen octahedra, comes from the small tolerance factor of the perovskite cell (t = 0.88 for LaVO3) and the smaller one comes from inter-site d-orbital interactions manifesting as a cooperative Jahn-Teller effect. Epitaxial strain acts on octahedral rotations and crystal field symmetry to alter this complex lattice-orbit coupling. In this study, LaVO3 thin film structures have been investigated by X-ray diffraction and scanning transmission electron microscopy. The analysis shows two different orientations of octahedral tilt patterns, as well as two distinct temperature behaviors, for compressive and tensile film strain states. Ab initio calculations capture the strain effect on the tilt pattern orientation in agreement with experimental data.

Taking advantage of the large electron escape depth of soft x-ray angle resolved photoemission spectroscopy, we report electronic structure measurements of (111)-oriented [LaNiO3/LaMnO3] superlattices and LaNiO3 epitaxial films. For thin films, we observe a 3D Fermi surface with an electron pocket at the Brillouin zone center and hole pockets at the zone vertices. Superlattices with thick nickelate layers present a similar electronic structure. However, as the thickness of the LaNiO3 is reduced, the superlattices become insulating. These heterostructures do not show a marked redistribution of spectral weight in momentum space but exhibit a pseudogap of ≈50 meV.

We present a detailed study of compressively strained PbxSr1−xTiO3 thin films grown by off-axis radio frequency magnetron sputtering on (001)-oriented Nb-doped SrTiO3 substrates. Film tetragonality and the ferroelectric critical temperatures are measured for samples of different composition and thickness and compared with a phenomenological Landau-Devonshire model. 180∘ ferroelectric domains are observed using both X-ray diffraction and piezoresponse force microscopy and domain sizes obtained by the two techniques are compared and discussed.

In this review, we focus on the celebrated interface between two band insulators, LaAlO3 and SrTiO3, that was found to be conducting, superconducting, and to display a strong spin-orbit coupling. We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and the signatures of magnetism. We then highlight distinctive characteristics of the superconducting regime, such as the electric field effect control of the carrier density, the unique tunability observed in this system, and the role of the electronic subband structure. Finally we compare the behavior of Tc versus 2D doping with the dome-like behavior of the 3D bulk superconductivity observed in doped SrTiO3. This comparison reveals surprising differences when the Tc behavior is analyzed in terms of the 3D carrier density for the interface and the bulk.

Bulk NdNiO3 and thin films grown along the pseudocubic (001)pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)pc NdGaO3, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T = TNéel. Here, we investigate thin films of SmNiO3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (TNéel < TMI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where TNéel = TMI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO3 lattice leads to the stabilization of a single metallic paramagnetic phase.

We investigate the two-dimensional Fermi surface of high-mobility LaAlO _3 /SrTiO _3 interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin–orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy d _xz / d _yz orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect.

Within the last twenty years, the status of the spin–orbit interaction has evolved from that of a simple atomic contribution to a key effect that modifies the electronic band structure of materials. It is regarded as one of the basic ingredients for spintronics, locking together charge and spin degrees of freedom and recently it is instrumental in promoting a new class of compounds, the topological insulators. In this review, we present the current status of the research on the spin–orbit coupling in transition metal oxides, discussing the case of two semiconducting compounds, and , and the properties of surface and interfaces based on these. We conclude with the investigation of topological effects predicted to occur in different complex oxides. [ABSTRACT FROM AUTHOR]

This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron–lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices. [ABSTRACT FROM AUTHOR]

Spin-to-charge conversion using the inverse Rashba-Edelstein effect is measured in the 2D electron liquid existing at the interface between LaAlO3 and SrTiO3. The effect is found to be larger than in the highly Rashba split Bi/Ag interface which we attribute to an amplifying effect due to a long carrier's momentum lifetime. The explanation is supported by temperature measurements and the Rashba field is also shown to be anisotropic in the interface plane. [ABSTRACT FROM AUTHOR]