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4 results on '"Jean Landreau"'

1. Tunable dual-mode DFB laser for millimetre-wave signal generation

Author

O. Le Gouezigou, Francis Poingt, Francois Lelarge, S. Ginestar, L. Le Gouezigou, Frederic Pommereau, G-H Duan, Alain Accard, Jean Landreau, Jean-Pierre Vilcot, B. Rousseau, F. van Dijk, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Optoélectronique - IEMN (OPTO - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Physics, [PHYS]Physics [physics], Distributed feedback laser, business.industry, 020208 electrical & electronic engineering, Photodetector, Physics::Optics, 020206 networking & telecommunications, 02 engineering and technology, Semiconductor device, Grating, Condensed Matter Physics, Laser, Signal, Electronic, Optical and Magnetic Materials, law.invention, Laser linewidth, Wavelength, law, Physical Sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Instrumentation
Abstract

International audience; Highly compact dual-mode semiconductor laser sources get more and more attention in different application fields such as radar, security and personal communication systems. When the two generated wavelengths are detected within the same photodetector, an electrical signal which frequency is the difference between the frequencies of the two optical modes will be issued. We report on an integrated semiconductor device which is composed of two in-line DFB sections that are using the same optical waveguide structure. The so generated dual-mode spectrum can be adjusted first, by the difference in the grating parameters of each DFB section and second, by their respective driving current. We will report on the characterisation of such a device focusing on tunability and linewidth aspects that are of prime importance in above mentioned applications.

Published
2011

2. All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity

Author

Jean Landreau, Julien Fatome, Stéphane Pitois, J.L. Oudar, David Massoubre, Jean Decobert, Guy Millot, SLCO, Laboratoire de Physique de l'Université de Bourgogne ( LPUB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Physique de l'Université de Bourgogne (LPUB), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS)-Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), and Fatome, Julien

Subjects
[PHYS.PHYS.PHYS-AO-PH]Physics [physics]/Physics [physics]/Atmospheric and Oceanic Physics [physics.ao-ph], Materials science, Extinction ratio, business.industry, Nonlinear optics, Saturable absorption, 02 engineering and technology, 01 natural sciences, Pulse shaping, Atomic and Molecular Physics, and Optics, [PHYS.PHYS.PHYS-AO-PH] Physics [physics]/Physics [physics]/Atmospheric and Oceanic Physics [physics.ao-ph], 010309 optics, 020210 optoelectronics & photonics, Optics, [ PHYS.PHYS.PHYS-AO-PH ] Physics [physics]/Physics [physics]/Atmospheric and Oceanic Physics [physics.ao-ph], 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Pulse wave, Photonics, business, Ultrashort pulse, Quantum well
Abstract

International audience; A vertical-access passive all-optical gate has been used to improve the extinction ratio of a 160 GHz pico-second pulse train at 1555 nm. An extinction ratio enhancement of 6 dB is observed within an 8 nm bandwidth. Such a device is a promising candidate for low-cost all optical reamplication and reshaping (211) regeneration at 160 Gbits/s.

Published
2006

3. Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser

Author

JX Chen, A. Markus, Jg-G. Provost, Beatrice Dagens, Andrea Fiore, Jean Landreau, Dalila Make, O. Le Gouezigou, B. Thedrez, Photonics and Semiconductor Nanophysics, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, business.industry, Direct current, Biasing, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Signal, Operation point, 010309 optics, Laser linewidth, Quantum dot laser, Modulation, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Frequency modulation
Abstract

International audience; Giant effective linewidth enhancement factors, close to 60, are measured on a quantum dot laser under specific biasing conditions. Consequently, 2.5 Gbit=s purely frequency modulated signal is obtained by direct current modulation at this operation point.

Published
2005

4. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 μm.

Author

Franois Lelarge, Batrice Dagens, Jeremie Renaudier, R. Brenot, Alain Accard, Frdric van Dijk, Dalila Make, Odile Le Gouezigou, Jean-Guy Provost, Francis Poingt, Jean Landreau, Olivier Drisse, Estelle Derouin, Benjamin Rousseau, Frdric Pommereau, and Guang-Hua Duan

Abstract

This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 mum. These two types of QDs can provide high gain and low losses. Continuous-wave (CW) room-temperature lasing operation on ground state of cavity length as short as 200 mum has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad-area (BA) lasers, and of 80 K for single-transverse-mode lasers in the temperature range between 25degC and 85degC. Buried ridge stripe (BRS)-type single-mode distributed feedback (DFB) lasers are also demonstrated for the first time, exhibiting a side-mode suppression ratio (SMSR) as high as 45 dB. Such DFB lasers allow the first floor-free 10-Gb/s direct modulation for back-to-back and transmission over 16-km standard optical fiber. In addition, novel results are given on gain, noise, and four-wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD Fabry-Perot (FP) lasers, owing to the small confinement factor and the three-dimensional (3-D) quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time-jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step toward the application of QD lasers and amplifiers to the field of optical fiber communications [ABSTRACT FROM PUBLISHER]

Published
2007
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