Search

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor (SiGe HBT). The ion-induced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design (TCAD) simulation. The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected. With a proton fluence of 5×1013 cm−2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation (DTI), where prompt funneling collection is the dominating mechanism. Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection. [ABSTRACT FROM AUTHOR]

In this paper we investigate two techniques for single event effect (SEE) mitigation by using back junction and p+ buffer layer in non-deep trench isolation (DTI) domestic silicon–germanium heterojunction bipolar transistors (SiGe HBTs) based on technology computer aided design (TCAD) simulation. The effectiveness of the two mitigation techniques and the influence of various structure parameters are investigated. Simulation results indicate that the two techniques are more effective in reducing collector charge collection induced by heavy ions striking at positions outside the collector–substrate (C–S) junction where charge collection is dominated by diffusion. By properly adjusting the parameters, charge collection of events outside the C–S junction can be reduced by more than an order of magnitude, while charge collection of events in the device center is halved without affecting the direct current (DC) and alternating current (AC) characteristics of the SiGe HBTs. [ABSTRACT FROM AUTHOR]

As the feature size of the device decreases, the critical charge decreases gradually and the influence of radiation particles becomes more and more serious, especially the single event upset (SEU). Some previously unknown radiation damage began to appear as the size of the device decreased. Low energy protons undergoing direct ionization can induce SEU in 65 nm static random access memories (SRAM), and muons can induce errors as a function of incident muon energy. In this work, the radiation damage caused by X-ray to the 45 nm SRAM is studied through experiments. The sensitive volume of SRAM is constructed using Monte Carlo radiation transport code Geant4 to analyze the effects of critical charge and metal interconnect overlayers of different materials. The experimental results suggested that under the low power state, the secondary electrons produced by the X-ray can induce upsets, lower the voltage, and increase the number of errors. Monte Carlo simulation shows that as the critical charge decreased, SEU becomes more severe. At the same time, photons interact with high atomic number materials in the metal interconnect overlayers, which could generate more secondary electrons resulting in the SEU cross section rising to a higher value. [ABSTRACT FROM AUTHOR]

The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work. The test specimens were firstly subjected to 60Co γ-ray and then the SEU evaluation was conducted using 209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement. [ABSTRACT FROM AUTHOR]

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. [ABSTRACT FROM AUTHOR]