38 results on '"Kushimoto, Maki"'
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2. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
3. Morphological study of InGaN on GaN substrate by supersaturation
4. Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes.
5. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
6. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs.
7. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes.
8. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes.
9. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing.
10. Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED.
11. Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode.
12. Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection.
13. Visualization of depletion layer in AlGaN homojunction p–n junction.
14. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
15. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers.
16. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations.
17. Impact of high-temperature implantation of Mg ions into GaN
18. A 271.8 nm deep-ultraviolet laser diode for room temperature operation
19. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes.
20. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
21. Design and characterization of a low-optical-loss UV-C laser diode.
22. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering.
23. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.
24. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR.
25. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism.
26. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates
27. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy
28. V-shaped dislocations in a GaN epitaxial layer on GaN substrate.
29. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65]
30. Study on Degradation of Deep‐Ultraviolet Laser Diode.
31. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.
32. <italic>m</italic>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <italic>m</italic>‐Plane GaN Substrates.
33. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate.
34. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes.
35. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.
36. Development of UV-C laser diodes on AlN substrate.
37. Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults.
38. Fabrication of InGaN/GaN Multiple Quantum Wells on (11̄01) GaN.
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