1. Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001) Alloys
- Author
-
Ruxandra M. Costescu, Dana G. Popescu, Nicoleta G. Apostol, Laura E. Stoflea, G. A. Lungu, and Cristian M. Teodorescu
- Subjects
X-ray photoelectron spectroscopy ,Materials science ,chemistry.chemical_element ,Germanium ,metal-semiconductor compounds ,spintronics ,surface magnetism ,molecular beam epitaxy ,magneto-optical Kerr effect ,lcsh:Technology ,Article ,Magnetization ,General Materials Science ,lcsh:Microscopy ,lcsh:QC120-168.85 ,Spintronics ,Low-energy electron diffraction ,Condensed matter physics ,lcsh:QH201-278.5 ,lcsh:T ,Magnetic anisotropy ,Magneto-optic Kerr effect ,Ferromagnetism ,chemistry ,lcsh:TA1-2040 ,lcsh:Descriptive and experimental mechanics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,lcsh:Engineering (General). Civil engineering (General) ,lcsh:TK1-9971 - Abstract
Ferromagnetic FexGe1−x with x = 2%–9% are obtained by Fe deposition onto Ge(001) at high temperatures (500 °C). Low energy electron diffraction (LEED) investigation evidenced the preservation of the (1 × 1) surface structure of Ge(001) with Fe deposition. X-ray photoelectron spectroscopy (XPS) at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe3 to approximately FeGe2, depending on the amount of Fe deposited. Room temperature magneto-optical Kerr effect (MOKE) evidenced ferromagnetic ordering at room temperature, with about 0.1 Bohr magnetons per Fe atom, and also a clear uniaxial magnetic anisotropy with the in-plane easy magnetization axis. This compound is a good candidate for promising applications in the field of semiconductor spintronics.
- Published
- 2013