33 results on '"Lee, Kung-Yen"'
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2. The correlation of the drain-source capacitance variation and the P-pillar structures in a 4H-SiC quasi super junction MOSFET
3. Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes.
4. Influence of the vertical wind and wind direction on the power output of a small vertical-axis wind turbine installed on the rooftop of a building
5. Long-term Energy Generation Efficiency of Solar PV System for Self-consumption
6. A novel algorithm for single-axis maximum power generation sun trackers
7. Development of solar home system with dual energy storage
8. Effect of switching scheme on the performance of a hybrid solar PV system
9. State of charge modeling of lithium-ion batteries using dual exponential functions
10. Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode
11. Influence of ink preparation with the untreated and the burned Pt/C catalysts for proton exchange membrane fuel cells
12. Modified multiscale entropy for short-term time series analysis
13. Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC
14. Characterization for N- and P-type 3C-SiC on Si (1 0 0) substrate with thermal anneal and pulsed excimer laser anneal
15. The performance analysis of the low‐speed direct‐drive generators for harvesting current energy.
16. Unveiling the core technology structure for companies through patent information
17. Online failure prediction of the electrolytic capacitor for LC filter of switching-mode power converters
18. The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes
19. The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes
20. Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers
21. 1100 V, 22.9 mΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.
22. Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC.
23. The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands.
24. Analysis of complex time series using refined composite multiscale entropy
25. A Novel Deep Junction Edge Termination for Superjunction MOSFETs.
26. Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS.
27. Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge.
28. Feature extraction for bearing fault diagnosis using composite multiscale entropy.
29. An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps.
30. Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate.
31. Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures.
32. A simplified analog control circuit of a maximum power point tracker.
33. A balanced pulse-modulated polar transmitter for improved efficiency and stability using power recycling.
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