13 results on '"Lin, Zhao-jun"'
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2. Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors.
3. Directly extracting both threshold voltage and series resistance from the conductance--voltage curve of an AlGaN/GaN Schottky diode.
4. Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor.
5. Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.
6. Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors.
7. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes.
8. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures.
9. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors.
10. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.
11. Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor.
12. Effects of GaN cap layer thickness on an AlN/GaN heterostructure.
13. Thermal stability of GaN powders in the flowing stream of N2 gas
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